A high voltage(〉 600 V) integrable silicon-on-insulator(SOI) trench-type lateral insulated gate bipolar transistor(LIGBT) with a reduced cell-pitch is proposed.The LIGBT features multiple trenches(MTs):two o...A high voltage(〉 600 V) integrable silicon-on-insulator(SOI) trench-type lateral insulated gate bipolar transistor(LIGBT) with a reduced cell-pitch is proposed.The LIGBT features multiple trenches(MTs):two oxide trenches in the drift region and a trench gate extended to the buried oxide(BOX).Firstly,the oxide trenches enhance electric field strength because of the lower permittivity of oxide than that of Si.Secondly,oxide trenches bring in multi-directional depletion,leading to a reshaped electric field distribution and an enhanced reduced-surface electric-field(RESURF) effect.Both increase the breakdown voltage(BV).Thirdly,oxide trenches fold the drift region around the oxide trenches,leading to a reduced cell-pitch.Finally,the oxide trenches enhance the conductivity modulation,resulting in a high electron/hole concentration in the drift region as well as a low forward voltage drop(Von).The oxide trenches cause a low anode-cathode capacitance,which increases the switching speed and reduces the turn-off energy loss(Eoff).The MT SOI LIGBT exhibits a BV of 603 V at a small cell-pitch of 24 μm,a Von of 1.03 V at 100 A/cm-2,a turn-off time of 250 ns and Eoff of 4.1×10?3 mJ.The trench gate extended to BOX synchronously acts as dielectric isolation between high voltage LIGBT and low voltage circuits,simplifying the fabrication processes.展开更多
With the widespread use of high-power and highly integrated insulated gate bipolar transistor(IGBT),their cooling methods have become challenging.This paper proposes a liquid cooling scheme for heavy-duty automated gu...With the widespread use of high-power and highly integrated insulated gate bipolar transistor(IGBT),their cooling methods have become challenging.This paper proposes a liquid cooling scheme for heavy-duty automated guided vehicle(AGV)motor driver in port environment,and improves heat dissipation by analyzing and optimizing the core component of finned heat sink.Firstly,the temperature distribution of the initial scheme is studied by using Fluent software,and the heat transfer characteristics of the finned heat sink are obtained through numerical analysis.Secondly,an orthogonal test is designed and combined with the response surface methodology to optimize the structural parameters of the finned heat sink,resulting in a 14.57%increase in the heat dissipation effect.Finally,the effectiveness of heat dissipation enhancement is verified.This work provides valuable insights into improving the heat dissipation of IGBT modules and heat sinks,and provides guidance for their future applications.展开更多
基金Projects supported by the National Natural Science Foundation of China (Grant No. 61176069)the State Key Laboratory of Electronic Thin Films and Integrated Devices,China (Grant No. CXJJ201004)the National Key Laboratory of Analog Integrated Circuit,China (Grant No. 9140C090304110C0905)
文摘A high voltage(〉 600 V) integrable silicon-on-insulator(SOI) trench-type lateral insulated gate bipolar transistor(LIGBT) with a reduced cell-pitch is proposed.The LIGBT features multiple trenches(MTs):two oxide trenches in the drift region and a trench gate extended to the buried oxide(BOX).Firstly,the oxide trenches enhance electric field strength because of the lower permittivity of oxide than that of Si.Secondly,oxide trenches bring in multi-directional depletion,leading to a reshaped electric field distribution and an enhanced reduced-surface electric-field(RESURF) effect.Both increase the breakdown voltage(BV).Thirdly,oxide trenches fold the drift region around the oxide trenches,leading to a reduced cell-pitch.Finally,the oxide trenches enhance the conductivity modulation,resulting in a high electron/hole concentration in the drift region as well as a low forward voltage drop(Von).The oxide trenches cause a low anode-cathode capacitance,which increases the switching speed and reduces the turn-off energy loss(Eoff).The MT SOI LIGBT exhibits a BV of 603 V at a small cell-pitch of 24 μm,a Von of 1.03 V at 100 A/cm-2,a turn-off time of 250 ns and Eoff of 4.1×10?3 mJ.The trench gate extended to BOX synchronously acts as dielectric isolation between high voltage LIGBT and low voltage circuits,simplifying the fabrication processes.
基金Supported by the National Key Research and Development Plan Program(No.2022YFB4701101)National Natural Science Foundation of Chi-na(No.U1913211)Natural Science Foundation of Hebei Province of China(No.F2021202062)。
文摘With the widespread use of high-power and highly integrated insulated gate bipolar transistor(IGBT),their cooling methods have become challenging.This paper proposes a liquid cooling scheme for heavy-duty automated guided vehicle(AGV)motor driver in port environment,and improves heat dissipation by analyzing and optimizing the core component of finned heat sink.Firstly,the temperature distribution of the initial scheme is studied by using Fluent software,and the heat transfer characteristics of the finned heat sink are obtained through numerical analysis.Secondly,an orthogonal test is designed and combined with the response surface methodology to optimize the structural parameters of the finned heat sink,resulting in a 14.57%increase in the heat dissipation effect.Finally,the effectiveness of heat dissipation enhancement is verified.This work provides valuable insights into improving the heat dissipation of IGBT modules and heat sinks,and provides guidance for their future applications.