Si-rich SiOx and amorphous Si clusters embedded in SiOx films were prepared by the radio-frequency magnetron cosputtering method and high-temperature annealing treatment.The threshold resistance switching behavior was...Si-rich SiOx and amorphous Si clusters embedded in SiOx films were prepared by the radio-frequency magnetron cosputtering method and high-temperature annealing treatment.The threshold resistance switching behavior was achieved from the memory mode by continuous bias sweeping in all films,which was caused by the formation of clusters due to the local overheating under a large electric field.Besides,the Ⅰ-Ⅴ characteristics of the threshold switching showed a dependence on the annealing temperature and the SiOx thickness.In particular,formation and rupture of conduction paths is considered to be the switching mechanism for the 39 nm-SiOx film,while for the 78 nm-SiOx film,adjusting of the Schottky barrier height between insulator and semiconductor is more reasonable.This study demonstrates the importance of investigation of both switching modes in resistance random access memory.展开更多
A terahertz(THz) polarizer and switch structure is proposed based on the phase transition of vanadium dioxide(VO_2). When VO_2 is in the insulation phase, the resonance frequencies of the proposed structure are 1.49 T...A terahertz(THz) polarizer and switch structure is proposed based on the phase transition of vanadium dioxide(VO_2). When VO_2 is in the insulation phase, the resonance frequencies of the proposed structure are 1.49 THz and 1.22 THz for the x- and y-polarization, respectively. It can perform as a THz polarizer with extinction ratios of 52.5 dB and 17 dB for the y- and x-polarization, respectively; When VO_2 transforms into metallic phase, the resonance frequency for x-polarization wave shifts from 1.49 THz to 1.22 THz, while that remains still for the y-polarization component. It means that the structure can work as a polarization-dependent THz switch with a high extinction ratio of 32 dB.展开更多
基金Project supported by the Open Project Program of Surface Physics Laboratory(National Key Laboratory)of Fudan University,China(Grant No.KF2015.02)the Open Project Program of National Laboratory for Infrared Physics,Chinese Academy of Sciences(Grant No.M201503)+1 种基金Zhejiang Provincial Science and Technology Key Innovation Team,China(Grant No.2011R50012)Zhejiang Provincial Key Laboratory,China(Grant No.2013E10022)
文摘Si-rich SiOx and amorphous Si clusters embedded in SiOx films were prepared by the radio-frequency magnetron cosputtering method and high-temperature annealing treatment.The threshold resistance switching behavior was achieved from the memory mode by continuous bias sweeping in all films,which was caused by the formation of clusters due to the local overheating under a large electric field.Besides,the Ⅰ-Ⅴ characteristics of the threshold switching showed a dependence on the annealing temperature and the SiOx thickness.In particular,formation and rupture of conduction paths is considered to be the switching mechanism for the 39 nm-SiOx film,while for the 78 nm-SiOx film,adjusting of the Schottky barrier height between insulator and semiconductor is more reasonable.This study demonstrates the importance of investigation of both switching modes in resistance random access memory.
基金supported by the National Basic Research Program of China(No.2014CB339800)the National Natural Science Foundation of China(Nos.61171027 and 61505088)+1 种基金the Natural Science Foundation of Tianjin of China(No.15JCQNJC02100)the Project of Science and Technology Program of Tianjin of China(No.13RCGFGX01127)
文摘A terahertz(THz) polarizer and switch structure is proposed based on the phase transition of vanadium dioxide(VO_2). When VO_2 is in the insulation phase, the resonance frequencies of the proposed structure are 1.49 THz and 1.22 THz for the x- and y-polarization, respectively. It can perform as a THz polarizer with extinction ratios of 52.5 dB and 17 dB for the y- and x-polarization, respectively; When VO_2 transforms into metallic phase, the resonance frequency for x-polarization wave shifts from 1.49 THz to 1.22 THz, while that remains still for the y-polarization component. It means that the structure can work as a polarization-dependent THz switch with a high extinction ratio of 32 dB.
