期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Thermoelectric Transport by Surface States in Bi2Se3-Based Topological Insulator Thin Films
1
作者 李龙龙 徐文 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第4期105-108,共4页
We develop a tractable theoretical model to investigate the thermoelectric (TE) transport properties of surface states in topological insulator thin films (TITFs) of Bi2Sea at room temperature. The hybridization b... We develop a tractable theoretical model to investigate the thermoelectric (TE) transport properties of surface states in topological insulator thin films (TITFs) of Bi2Sea at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi2Sea-based TITFs as high-performance TE materials and devices. 展开更多
关键词 TE Thermoelectric Transport by Surface States in Bi2Se3-Based Topological Insulator thin films Bi ZT SEEBECK
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部