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Gallium bismuth halide GaBi-X2 (X = I, Br, CI) monolayers with distorted hexagonal framework: Novel room- temperature quantum spin Hall insulators
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作者 Linyang Li Ortwin Leenaerts +3 位作者 Xiangru Kong Xin Chen Mingwen Zhao Francois M. Peeters 《Nano Research》 SCIE EI CAS CSCD 2017年第6期2168-2180,共13页
Quantum spin Hall (QSH) insulators with a large topologically nontrivial bulk gap are crucial for future applications of the QSH effect. Among these, group III-V monolayers and their halides, which have a chair stru... Quantum spin Hall (QSH) insulators with a large topologically nontrivial bulk gap are crucial for future applications of the QSH effect. Among these, group III-V monolayers and their halides, which have a chair structure (regular hexagonal framework), have been widely studied. Using first-principles calculations, we formulate a new structure model for the functionalized group III-V monolayers, which consist of rectangular GaBi-X2 (X = I, Br, C1) monolayers with a distorted hexagonal framework (DHF). These structures have a far lower energy than the GaBi-X2 monolayers with a chair structure. Remarkably, the DHF GaBi-X2 monolayers are all QSH insulators, which exhibit sizeable nontrivial band gaps ranging from 0.17 to 0.39 eV. The band gaps can be widely tuned by applying different spin-orbit coupling strengths, resulting in a distorted Dirac cone. 展开更多
关键词 quantum spin Hall (QSH)insulators first-principles calculations GaBi-X2 (X = L Br Cl)monolayers distorted hexagonal framework distorted Dirac cone
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