Ultrafast dynamics in photo-excited Mott insulator Sr_(3)Ir_(2)O_7 at high pressure

High-pressure ultrafast dynamics,as a new crossed research direction,are sensitive to subtle non-equilibrium state changes that might be unresolved by equilibrium states measurements,providing crucial information for studying delicate phase transitions caused by complex interactions in Mott insulators.With time-resolved transient reflectivity measurements,we identified the new phases in the spin–orbit Mott insulator Sr_(3)Ir_(2)O_7 at 300 K that was previously unidentified using conventional approaches such as x-ray diffraction.Significant pressure-dependent variation of the amplitude and lifetime obtained by fitting the reflectivity?R/R reveal the changes of electronic structure caused by lattice distortions,and reflect the critical phenomena of phase transitions.Our findings demonstrate the importance of ultrafast nonequilibrium dynamics under extreme conditions for understanding the phase transition of Mott insulators.

Quantitative determination of the critical points of Mott metal–insulator transition in strongly correlated systems

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal–insulator transition. We investigate the Mott transition in a Hubbard model by using the dynamical mean-field theory and introduce the local quantum state fidelity to depict the Mott metal–insulator transition. The local quantum state fidelity provides a convenient approach to determining the critical point of the Mott transition. Additionally, it presents a consistent description of the two distinct forms of the Mott transition points.

Optical study of magnetic topological insulator MnBi_(4)Te_7

We present an infrared spectroscopy study of the magnetic topological insulator MnBi_(4)Te_7 with antiferromagnetic(AFM) order below the Neel temperature TN= 13 K. Our investigation reveals that the low-frequency optical conductivity consists of two Drude peaks, indicating a response of free carriers involving multiple bands. Interestingly, the narrow Drude peak grows strongly as the temperature decreases, while the broad Drude peak remains relatively unchanged. The onset of interband transitions starts around 2000 cm^(-1), followed by two prominent absorption peaks around 10000 cm^(-1) and 20000 cm^(-1). Upon cooling, there is a notable transfer of spectral weight from the interband transitions to the Drude response. Below TN, the AFM transition gives rise to small anomalies of the charge response due to a band reconstruction.These findings provide valuable insights into the interplay between magnetism and the electronic properties in MnBi_(4)Te_7.

Data augmentation method for insulators based on Cycle-GAN

Data augmentation is an important task of using existing data to expand data sets.Using generative countermeasure network technology to realize data augmentation has the advantages of high-quality generated samples,simple training,and fewer restrictions on the number of generated samples.However,in the field of transmission line insulator images,the freely synthesized samples are prone to produce fuzzy backgrounds and disordered samples of the main insulator features.To solve the above problems,this paper uses the cycle generative adversarial network(Cycle-GAN)used for domain conversion in the generation countermeasure network as the initial framework and uses the self-attention mechanism and channel attention mechanism to assist the conversion to realize the mutual conversion of different insulator samples.The attention module with prior knowledge is used to build the generation countermeasure network,and the generative adversarial network(GAN)model with local controllable generation is built to realize the directional generation of insulator belt defect samples.The experimental results show that the samples obtained by this method are improved in a number of quality indicators,and the quality effect of the samples obtained is excellent,which has a reference value for the data expansion of insulator images.

A Simple and Effective Surface Defect Detection Method of Power Line Insulators for Difficult Small Objects

Insulator defect detection plays a vital role in maintaining the secure operation of power systems.To address the issues of the difficulty of detecting small objects and missing objects due to the small scale,variable scale,and fuzzy edge morphology of insulator defects,we construct an insulator dataset with 1600 samples containing flashovers and breakages.Then a simple and effective surface defect detection method of power line insulators for difficult small objects is proposed.Firstly,a high-resolution featuremap is introduced and a small object prediction layer is added so that the model can detect tiny objects.Secondly,a simplified adaptive spatial feature fusion(SASFF)module is introduced to perform cross-scale spatial fusion to improve adaptability to variable multi-scale features.Finally,we propose an enhanced deformable attention mechanism(EDAM)module.By integrating a gating activation function,the model is further inspired to learn a small number of critical sampling points near reference points.And the module can improve the perception of object morphology.The experimental results indicate that concerning the dataset of flashover and breakage defects,this method improves the performance of YOLOv5,YOLOv7,and YOLOv8.In practical application,it can simply and effectively improve the precision of power line insulator defect detection and reduce missing detection for difficult small objects.

Higher-order topological Anderson insulator on the Sierpiński lattice

Disorder effects on topological materials in integer dimensions have been extensively explored in recent years. However, its influence on topological systems in fractional dimensions remains unclear. Here, we investigate the disorder effects on a fractal system constructed on the Sierpiński lattice in fractional dimensions. The system supports the second-order topological insulator phase characterized by a quantized quadrupole moment and the normal insulator phase. We find that the second-order topological insulator phase on the Sierpiński lattice is robust against weak disorder but suppressed by strong disorder. Most interestingly, we find that disorder can transform the normal insulator phase to the second-order topological insulator phase with an emergent quantized quadrupole moment. Finally, the disorder-induced phase is further confirmed by calculating the energy spectrum and the corresponding probability distributions.

Three-dimensional topological crystalline insulator without spin-orbit coupling in nonsymmorphic photonic metacrystal

By including certain point group symmetry in the classification of band topology,Fu proposed a class of threedimensionaltopological crystalline insulators(TCIs)without spin-orbit coupling in 2011.In Fu’s model,surface states(ifpresent)doubly degenerate atГandM when time-reversal and C_(4) symmetries are preserved.The analogs of Fu’s modelwith surface states quadratically degenerate atM are widely studied,while surface states with quadratic degeneracy atГare rarely reported.In this study,we propose a three-dimensional TCI without spin-orbit coupling in a judiciously designednonsymmorphic photonic metacrystal.The surface states of photonic TCIs exhibit quadratic band degeneracy in the(001)surface Brillouin zone(BZ)center(Гpoint).The gapless surface states and their quadratic dispersion are protected by C4and time-reversal symmetries,which correspond to the nontrivial band topology characterized by Z_(2)topological invariant.Moreover,the surface states along lines fromГto the(001)surface BZ boundary exhibit zigzag feature,which is interpretedfrom symmetry perspective by building composite operators constructed by the product of glide symmetries with timereversalsymmetry.The metacrystal array surrounded with air possesses high order hinge states with electric fields highlylocalized at the hinge that may apply to optical sensors.The gapless surface states and hinge states reside in a cleanfrequency bandgap.The topological surface states emerge at the boundary of the metacrystal and perfect electric conductor(PEC),which provide a pathway for topologically manipulating light propagation in photonic devices.

Resistance Measurements and Interpretations Relating to Flashover of Artificially Contaminated Ceramic Insulator Strings

The flashover of insulator strings occurring at normal working voltages undercontaminated/polluted conditions, obviously deserves serious consideration. Though much researchhas been gone into pollution-induced flashover phenomena but grey areas still exist in ourknowledge. In the present experimental study the breakdown (flashover) voltages across gaps oninsulator top surfaces and gaps between sheds (on the underside of an insulator), also the flashoverstudies on a single unit and a 3-unit insulator strings were carried out. An attempt has been madeto correlate the values obtained for all the cases. From the present investigation it was found thatresistance measurement of individual units of a polluted 3-unit string before and after flashoverindicates that strongly differing resistances could be the cause of flashover of ceramic discinsulator strings.

Effect of electrodes and thermal insulators on grain refinement by electric current pulse

The application of electric current pulse（ECP） to a solidification process refers to the immersion of electrodes into the liquid metal and the employment of thermal insulators on the upper surface of metal.In order to ascertain the effects of these two factors on the structure refinement by the ECP technique,three groups of experiments were performed with different types of electrodes or various thermal insulators.By the comparison between solidification structures under different conditions,it is followed that the electrode and the thermal insulator have an obvious influence on the grain refinement under an applied ECP,and further analysis demonstrates that the thermal conditions of the liquid surface play a vital role in the modification of solidification structure.Also,the results support the viewpoint that most of the equiaxed grains originate from the liquid surface subjected to an ECP.

A Novel Insulator and Its Characteristics

Both the ceramic and the composite insulators have their own advantages and disadvantages when compared with each other. It is a reasonable idea to combine their merits together to design a novel insulator. The key measure of the novel insulator suggested in this paper is to add an annular metal sheet coated with high temperature vulcanisation (HTV) silicone rubber (SIR) at the base of the traditional ceramic insulator cap. The HTVSIR covering on the exterior of the metal sheet can lengthen the creepage distance. The metal sheet can uniform the electric stress, reduce its maximum value and modify its direction on one insulator unit and acts as equalizing ring on an insulator string. The factors stated above are the main reasons why the novel insulator has better insulating performance, including lower leakage current and flashover voltage, especially under polluted conditions. Simultaneously, the novel insulator can overcome the disadvantages of the ordinary remedies which have been widely used to improve the performance of ceramic insulators against pollution. The experimental results obtained in the laboratory were in good agreement with the theoretical analysis and demonstrated the novel insulator's effectiveness.

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices.Using this method,DSOI,SOI,and bulk MOSFETs are successfully integrated on a single chip.Test results show that the drain induced barrier lowering effect is suppressed.The breakdown voltage drain-to-source is greatly increased for DSOI devices due to the elimination of the floating-body effect.And the self-heating effect is also reduced and thus the reliability increased.At the same time,the advantage of SOI devices in speed is maintained.The technology makes it possible to integrate low voltage,low power,low speed SOI devices or high voltage,high power,high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.

Design and Fabrication of Ultracompact 3-dB MMI Coupler in Silicon-on-Insulator

An ultracompact 3 dB coupler is designed and fabricated in silicon on insulator,based on 1×2 line tapered multimode interference (MMI) coupler.Comparing with the conventional straight MMI coupler,the device is ～40% shorter in length.The device exhibits uniformity of 1 3dB and excess loss of 2 5dB.

Analyses on performances of heat and multilayer reflection insulators

This research was conducted to study the performances of the heat and multilayer reflection insulators used for buildings in South Korea to realize eco-friendly, low-energy-consumption, green construction, and to contribute to energy consumption reduction in buildings and to the nation＇s greenhouse gas emission reduction policy （targeting 30% reduction compared to BAUCousiness as usual） by 2020）. The heat insulation performance test is about the temperatures on surfaces of test piece. The high air temperature and the low air temperature were measured to determine the overall heat transfer coefficient and thermal conductivity. The conclusions are drawn that the heat transmission coefficients for each type of existing reflection insulator are： A-1 （0.045 W/（m-K））, A-2 （0.031 W/（m.K））, A-3 （0.042 W/（m.K））, A-4 （0.078 W/（m.K））, and the average heat conductivity is 0.049 W/（m-K）; The heat conductivity for each type of Styrofoam insulator are 0.030 W/（m.K） for B-l, 0.032 W/（m-K） for B-2, 0.037 W/（m＇K） for B-3, 0.037 W/（m.K） for B-4, and the average heat conductivity is 0.035 W/（m＇K） regardless of the thickness of the insulator; The heat conductivity values of the multilayer reflection insulators are converted based on the thickness and type C-1 （0.020 W/（m.K））, C-2 （0.018 W/（m.K））, C-3 （0.016 W/（m.K））, and C-4 （0.012 W/（m.K））; The multilayer reflection insulator keeps the indoor-side surface temperature high （during winter） or low （in summer）, enhances the comfort of the building occupants, and conducts heating and moisture resistance to prevent dew condensation on the glass-outer-wall surface.

OTFT with Bilayer Gate Insulator and Modificative Electrode

An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine（CuPc） is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.

From magnetically doped topological insulator to the quantum anomalous Hall effect

Quantum Hall effect （QHE）, as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application, Such a QHE free of Landau levels, can appear in topological insulators （TIs） with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall （QAH） effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped （Bi,Sb）2Te3 TIs with well- controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e2 at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.

Ferromagnetic-insulators-modulated transport properties on the surface of a topological insulator

Transport properties on the surface of a topological insulator （TI） under the modulation of a two-dimensional （2D） ferromagnet/ferromagnet junction are investigated by the method of wave function matching. The single ferromagnetic barrier modulated transmission probability is expected to be a periodic function of the polarization angle and the planar rotation angle, that decreases with the strength of the magnetic proximity exchange increasing. However, the transmission probability for the double ferromagnetic insulators modulated n-n junction and n-p junction is not a periodic function of polarization angle nor planar rotation angle, owing to the combined effects of the double ferromagnetic insulators and the barrier potential. Since the energy gap between the conduction band and the valence band is narrowed and widened respectively in ranges of 0 ≤ 0 〈π/2 and r/2 〈 0 ≤ π, the transmission probability of the n-n junction first increases rapidly and then decreases slowly with the increase of the magnetic proximity exchange strength. While the transmission probability for the n-p junction demonstrates an opposite trend on the strength of the magnetic proximity exchange because the band gaps contrarily vary. The obtained results may lead to the possible realization of a magnetic/electric switch based on TIs and be useful in further understanding the surface states of TIs.

Growth and transport properties of topological insulator Bi2Se3 thin film on a ferromagnetic insulating substrate

Exchange coupling between topological insulator and ferromagnetic insulator through proximity effect is strongly attractive for both fundamental physics and technological applications. Here we report a comprehensive investigation on the growth behaviors of prototype topological insulator Bi2Se3 thin film on a single-crystalline LaCoO3 thin film on SrTiO3 substrate, which is a strain-induced ferromagnetic insulator. Different from the growth on other substrates, the Bi2Se3 films with highest quality on LaCoO3 favor a relatively low substrate temperature during growth. As a result, an inverse dependence of carrier mobility with the substrate temperature is found. Moreover, the magnetoresistance and coherence length of weak antilocalization also have a similar inverse dependence with the substrate temperature, as revealed by the magnetotransport measurements. Our experiments elucidate the special behaviors in Bi2Se3/LaCoO3 heterostructures, which provide a good platform for exploring related novel quantum phenomena, and are inspiring for device applications.

Design of insulator gray measurement system based on BH1750FVI

Ash dense(non-soluble sediment density,NSDD) is attached to the insulator surface material that can't dissolve in water,it is divided by the result of surface area and used for quantitative content of insulator surface non-soluble residues. Based on high voltage measurement,surface of outer insulation of ash can be used for the product line insulator pollution situation and determine whether it is able to withstand a variety of adverse factors. This paper proposes a method based on BH1750 FVI light intensity sensor for ash dense measurement.

Study of Temperature Distribution Along an Artificially Polluted Insulator String

Insulator becomes wet partially or completely, and the pollution layer on itbecomes conductive, when collecting pollutants for an extended period during dew, light rain, mist,fog or snow melting. Heavy rain is a complicated factor that it may wash away the pollution layerwithout initiating other stages of breakdown or it may bridge the gaps between sheds to promoteflashover. The insulator with a conducting pollution layer being energized, can cause a surfaceleakage current to flow (also temperature-rise). As the surface conductivity is non-uniform, theconducting pollution layer becomes broken by dry bands (at spots of high current density),interrupting the flow of leakage current. Voltage across insulator gets concentrated across drybands, and causes high electric stress and breakdown (dry band arcing). If the resistance of theinsulator surface is sufficiently low, the dry band arcs can be propagated to bridge the terminalscausing flashover. The present paper concerns the evaluation of the temperature distribution alongthe surface of an energized artificially polluted insulator string.

Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

In this paper, we investigate the single event transient （SET） occurring in partially depleted silicon-on-insulator （PDSOI） metal-oxide-semiconductor （MOS） devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-p.m single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and an- alyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test （DUT）. The dependences of SET characteristics on drain-induced barrier lowering （DIBL） and the parasitic bipolar junction transistor （PBJT） are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.