This paper studies the drain current collapse of A1GaN/GaN metal insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with NbA10 dielectric by applying dual-pulsed stress to the gate and drain of t...This paper studies the drain current collapse of A1GaN/GaN metal insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with NbA10 dielectric by applying dual-pulsed stress to the gate and drain of the device. For NbA10 MIS-HEMT, smaller current collapse is found thorough study of the gate-drain conductance dispersion especially when the gate static voltage is -8 V. Through a it is found that the growth of NbA10 can reduce the trap density of the AlGaN surface. Therefore, fewer traps can be filled by gate electrons, and hence the depletion effect in the channel is suppressed effectively. It is proved that the NbAIO gate dielectric can not only decrease gate leakage current but also passivate the A1GaN surface effectively, and weaken the current collapse effect accordingly.展开更多
The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are pr...The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there is a significant difference between the characters of radiation surface states (SS) formed by ionization and impact actions of the MIS structure irradiation at the insulator-semiconductor (I-S) interface. It is shown that the SS generation rate is increased in electric fields and depends on the MIS structure field electrode material.展开更多
基金Project supported by the State Key Program and Major Program of the National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191)the Fundamental Research Funds for the Central Universities (Grant Nos. JY10000925002 and JY10000904009)
文摘This paper studies the drain current collapse of A1GaN/GaN metal insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with NbA10 dielectric by applying dual-pulsed stress to the gate and drain of the device. For NbA10 MIS-HEMT, smaller current collapse is found thorough study of the gate-drain conductance dispersion especially when the gate static voltage is -8 V. Through a it is found that the growth of NbA10 can reduce the trap density of the AlGaN surface. Therefore, fewer traps can be filled by gate electrons, and hence the depletion effect in the channel is suppressed effectively. It is proved that the NbAIO gate dielectric can not only decrease gate leakage current but also passivate the A1GaN surface effectively, and weaken the current collapse effect accordingly.
文摘The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there is a significant difference between the characters of radiation surface states (SS) formed by ionization and impact actions of the MIS structure irradiation at the insulator-semiconductor (I-S) interface. It is shown that the SS generation rate is increased in electric fields and depends on the MIS structure field electrode material.
