In response to the growing complexity and performance of integrated circuit(IC),there is an urgent need to enhance the testing and stability of IC test equipment.A method was proposed to predict equipment stability us...In response to the growing complexity and performance of integrated circuit(IC),there is an urgent need to enhance the testing and stability of IC test equipment.A method was proposed to predict equipment stability using the upper side boundary value of normal distribution.Initially,the K-means clustering algorithm classifies and analyzes sample data.The accuracy of this boundary value is compared under two common confidence levels to select the optimal threshold.A range is then defined to categorize unqualified test data.Through experimental verification,the method achieves the purpose of measuring the stability of qualitative IC equipment through a deterministic threshold value and judging the stability of the equipment by comparing the number of unqualified data with the threshold value,which realizes the goal of long-term operation monitoring and stability analysis of IC test equipment.展开更多
A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transf...A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.展开更多
基金the National Natural Science Foundation of China(61306046,61640421)the Yicheng Elite Project(202371)+3 种基金the Open Project of National Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology(KFJJ20230101)the National Key Laboratory of Integrated Chips and Systems Project(SLICS-K202316)the Anhui University Research Project(2023AH050481)the Research on Testing Methods and Accuracy of High Frequency Signal Chips(2023AH050500)。
文摘In response to the growing complexity and performance of integrated circuit(IC),there is an urgent need to enhance the testing and stability of IC test equipment.A method was proposed to predict equipment stability using the upper side boundary value of normal distribution.Initially,the K-means clustering algorithm classifies and analyzes sample data.The accuracy of this boundary value is compared under two common confidence levels to select the optimal threshold.A range is then defined to categorize unqualified test data.Through experimental verification,the method achieves the purpose of measuring the stability of qualitative IC equipment through a deterministic threshold value and judging the stability of the equipment by comparing the number of unqualified data with the threshold value,which realizes the goal of long-term operation monitoring and stability analysis of IC test equipment.
基金Supported by the Key Laboratory of Microsatellites,Chinese Academy of Sciences
文摘A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.
