Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and optoelectronics.Prominent exa...Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and optoelectronics.Prominent examples of semiconductors include SiC,GaN,ZnO,and diamond,which exhibitdistinctive characteristics such as elevated mobility and thermalconductivity.These characteristics facilitate the operation of awide range of devices,including energy-efficient bipolar junctiontransistors(BJTs)and metal-oxide-semiconductor field-effecttransistors(MOSFETs),as well as high-frequency high-electronmobility transistors(HEMTs)and optoelectronic components suchas light-emitting diodes(LEDs)and lasers.These semiconductorsare used in building integrated circuits(ICs)to facilitate theoperation of power electronics,computer devices,RF systems,andother optoelectronic advancements.These breakthroughs includevarious applications such as imaging,optical communication,andsensing.Among them,the field of power electronics has witnessedtremendous progress in recent years with the development of widebandgap(WBG)semiconductor devices,which is capable ofswitching large currents and voltages rapidly with low losses.However,it has been proven challenging to integrate these deviceswith silicon complementary metal oxide semiconductor(CMOS)logic circuits required for complex control functions.The monolithic integration of silicon CMOS with WBG devices increases thecomplexity of fabricating monolithically integrated smart integrated circuits(ICs).This review article proposes implementingCMOS logic directly on the WBG platform as a solution.However,achieving the CMOS functionalities with the adoption of WBGmaterials still remains a significant hurdle.This article summarizesthe research progress in the fabrication of integrated circuitsadopting various WBG materials ranging from SiC to diamond,with the goal of building future smart power ICs.展开更多
随着NAND闪存芯片的存储容量持续增加,测试时间所带来的成本增加问题越发严重,本文围绕着如何降低单位测试时间和测试成本这一核心问题展开.在对闪存测试项目、测试方法分析的基础上,结合自动化测试设备(automatic test equipment,ATE)...随着NAND闪存芯片的存储容量持续增加,测试时间所带来的成本增加问题越发严重,本文围绕着如何降低单位测试时间和测试成本这一核心问题展开.在对闪存测试项目、测试方法分析的基础上,结合自动化测试设备(automatic test equipment,ATE)并行同测方法,提出新的输入输出总线复用测试方法,从而缓解闪存测试时间长、测试成本高的问题.以特定测试机台T5773为例,重新设计软硬件将测试机的并行测试吞吐率增加一倍,并对本设计中的一些基本问题如失效处理等进行了说明和解决办法汇总,最终减少单位测试时间44.4%,极大降低了闪存测试成本.因此,此方法可以运用于闪存大规模生产的成本控制.展开更多
基金supported by KAUST BaselineFund:BAS/1/1664-01-01,KAUST Near-term Grand Challenge Fund:REI/1/4999-01-01,KAUST Impact Acceleration Fund:REI/1/5124-01-01.
文摘Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and optoelectronics.Prominent examples of semiconductors include SiC,GaN,ZnO,and diamond,which exhibitdistinctive characteristics such as elevated mobility and thermalconductivity.These characteristics facilitate the operation of awide range of devices,including energy-efficient bipolar junctiontransistors(BJTs)and metal-oxide-semiconductor field-effecttransistors(MOSFETs),as well as high-frequency high-electronmobility transistors(HEMTs)and optoelectronic components suchas light-emitting diodes(LEDs)and lasers.These semiconductorsare used in building integrated circuits(ICs)to facilitate theoperation of power electronics,computer devices,RF systems,andother optoelectronic advancements.These breakthroughs includevarious applications such as imaging,optical communication,andsensing.Among them,the field of power electronics has witnessedtremendous progress in recent years with the development of widebandgap(WBG)semiconductor devices,which is capable ofswitching large currents and voltages rapidly with low losses.However,it has been proven challenging to integrate these deviceswith silicon complementary metal oxide semiconductor(CMOS)logic circuits required for complex control functions.The monolithic integration of silicon CMOS with WBG devices increases thecomplexity of fabricating monolithically integrated smart integrated circuits(ICs).This review article proposes implementingCMOS logic directly on the WBG platform as a solution.However,achieving the CMOS functionalities with the adoption of WBGmaterials still remains a significant hurdle.This article summarizesthe research progress in the fabrication of integrated circuitsadopting various WBG materials ranging from SiC to diamond,with the goal of building future smart power ICs.
文摘随着NAND闪存芯片的存储容量持续增加,测试时间所带来的成本增加问题越发严重,本文围绕着如何降低单位测试时间和测试成本这一核心问题展开.在对闪存测试项目、测试方法分析的基础上,结合自动化测试设备(automatic test equipment,ATE)并行同测方法,提出新的输入输出总线复用测试方法,从而缓解闪存测试时间长、测试成本高的问题.以特定测试机台T5773为例,重新设计软硬件将测试机的并行测试吞吐率增加一倍,并对本设计中的一些基本问题如失效处理等进行了说明和解决办法汇总,最终减少单位测试时间44.4%,极大降低了闪存测试成本.因此,此方法可以运用于闪存大规模生产的成本控制.
