This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene （DVS-BCB） adhesive bond...This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene （DVS-BCB） adhesive bonding method. A grating coupler is adopted to couple light from the fiber to the silicon waveguide. Light in the silicon photonic waveguide is evanescently coupled into the photodetector. The integrated photodetector structure is first simulated using the FDTD （finite difference time domain） solutions software and the simulation results show a detection efficiency of 95%. According to the simulation result, the integrated photodetector is fabricated. The measured responsivity of the fabricated integrated photodetector with a detection length of 30μm is 0.89 A/W excluding the coupling loss between the fiber and the grating coupler and the silicon propagation loss at the wave-length of 1550 nm with a reverse bias voltage of 3 V. Measured 3-dB bandwidth is 27 GHz using the Lightwave Component Analyzer （LCA）. The eye diagram signal test results indicate that the photodetector can operate at a high speed of 40 Gbit/s. The integrated photodetector is of great significance in the silicon-based optoelectronic integrated chip which can be applied to the optical communication and the super node data transmission chip of the high-performance computer.展开更多
A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-Perot （F-P） filter structure. The step-shaped GaAs/A1GaAs distributed Bragg reflector...A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-Perot （F-P） filter structure. The step-shaped GaAs/A1GaAs distributed Bragg reflectors and the InP PIN photodetector are grown on a GaAs substrate using low pressure metal organic chemical vapor deposition. High quality GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer. The photodetector structure is optimized by theoretical simulation. This device has a dual-peak distance of 19 nm （1558 and 1 577 nm）. The 3-dB bandwidth of 16 GHz is simultaneously obtained with peak ouantum efficiencies of 8.5% and 8.6% around 1 .55R and 1 .577 nm respectively展开更多
基金Project supported by the High-Tech Research and Development Program of China(Nos.2015AA016904,2015AA012302)the National Basic Research Program of China(Nos.2012CB933503,2013CB932904)the National Natural Foundation of China(Nos.61274069,61176053,61021003,61435002)
文摘This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene （DVS-BCB） adhesive bonding method. A grating coupler is adopted to couple light from the fiber to the silicon waveguide. Light in the silicon photonic waveguide is evanescently coupled into the photodetector. The integrated photodetector structure is first simulated using the FDTD （finite difference time domain） solutions software and the simulation results show a detection efficiency of 95%. According to the simulation result, the integrated photodetector is fabricated. The measured responsivity of the fabricated integrated photodetector with a detection length of 30μm is 0.89 A/W excluding the coupling loss between the fiber and the grating coupler and the silicon propagation loss at the wave-length of 1550 nm with a reverse bias voltage of 3 V. Measured 3-dB bandwidth is 27 GHz using the Lightwave Component Analyzer （LCA）. The eye diagram signal test results indicate that the photodetector can operate at a high speed of 40 Gbit/s. The integrated photodetector is of great significance in the silicon-based optoelectronic integrated chip which can be applied to the optical communication and the super node data transmission chip of the high-performance computer.
基金supported by the National"973"Pro-gram of China(No.2010CB327600)the National Natural Science Foundation of China(No.61020106007)+3 种基金the Fundamental Research Funds for the Central University(No.BUPT2011RC0403)the National"863"Program of China(No.2007AA03Z418)the 111 Project of China(No.B07005)the Program for Changjiang Scholars and Innovative Research Team in University MOE,China(No.IRT0609)
文摘A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-Perot （F-P） filter structure. The step-shaped GaAs/A1GaAs distributed Bragg reflectors and the InP PIN photodetector are grown on a GaAs substrate using low pressure metal organic chemical vapor deposition. High quality GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer. The photodetector structure is optimized by theoretical simulation. This device has a dual-peak distance of 19 nm （1558 and 1 577 nm）. The 3-dB bandwidth of 16 GHz is simultaneously obtained with peak ouantum efficiencies of 8.5% and 8.6% around 1 .55R and 1 .577 nm respectively
