Rechargeable magnesium-ion(Mg-ion)batteries have attracted wide attention for energy storage.However,magnesium anode is still limited by the irreversible Mg plating/stripping procedure.Herein,a well-designed binary Bi...Rechargeable magnesium-ion(Mg-ion)batteries have attracted wide attention for energy storage.However,magnesium anode is still limited by the irreversible Mg plating/stripping procedure.Herein,a well-designed binary Bi_(2)O_(3)-Bi_(2)S_(3)(BO-BS)heterostructure is fulfilled by virtue of the cooperative interface and energy band engineering targeted fast Mg-ion storage.The built-in electronic field resulting from the asymmetrical electron distribution at the interface of electron-rich S center at Bi_(2)S_(3) side and electron-poor O center at Bi_(2)O_(3) side effectively accelerates the electrochemical reaction kinetics in the Mg-ion battery system.Moreover,the as-designed heterogenous interface also benefits to maintaining the electrode integrity.With these advantages,the BO-BS electrode displays a remarkable capacity of 150.36 mAh g^(−1) at 0.67 A g^(-1) and a superior cycling stability.This investigation would offer novel insights into the rational design of functional heterogenous electrode materials targeted the fast reaction kinetics for energy storage systems.展开更多
In dual-ion batteries (DIBs), energy storage is achieved by intercalation/de-intercalation of both cations and anions. Due to the mismatch between ion diameter and layer space of active materials, however, volume expa...In dual-ion batteries (DIBs), energy storage is achieved by intercalation/de-intercalation of both cations and anions. Due to the mismatch between ion diameter and layer space of active materials, however, volume expansion and exfoliation always occur for electrode materials. Herein, an integrated electrode Co3O4/carbon fiber paper (CFP) is prepared as the anode of DIB. As the Co3O4 nanosheets grow on CFP substrate vertically, it promotes the immersion of electrolyte and shortens the pathway for ionic transport. Besides, the strong interaction between Co3O4 and CFP substrate reduces the possibility of sheet exfoliation. An integrated-electrode-based DIB is therefore packaged using Co3O4/CFP as anode and graphite as cathode. As a result, a high energy density of 72 Wh/kg is achieved at a power density of 150 W/kg. The design of integrated electrode provides a new route for the development of high-performance DIBs.展开更多
Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically....Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically. The capacitors exhibit a high density of about 6.05 fF/μm^2, a small leakage current of 4.8 × 10^-8 A/cm^2 at 3 V, a high breakdown electric field of 8.61 MV/cm as well as acceptable voltage coefficients of capacitance （VCCs） of 795 ppm/V2 and 268ppm/V at 1 MHz. The observed properties should be attributed to high-quality Al2O3 film and chemically stable TaN electrodes. Further, a logarithmically linear relationship between quadratic VCC and frequency is observed due to the change of relaxation time with carrier mobility in the dielectric. The conduction mechanism in the high field ranges is dominated by the Poole-Frenkel emission, and the leakage current in the low field ranges is likely to be associated with trap-assisted tunnelling. Meanwhile, the Al2O3 dielectric presents charge trapping under low voltage stresses, and defect generation under high voltage stresses, and it has a hard-breakdown performance.展开更多
基金supported by the National Natural Science Foundation of China(52172239)Project of State Key Laboratory of Environment-Friendly Energy Materials(SWUST,Grant Nos.22fksy23 and 18ZD320304)+3 种基金the Frontier Project of Chengdu Tianfu New Area Institute(SWUST,Grand No.2022ZY017)Chongqing Talents:Exceptional Young Talents Project(Grant No.CQYC201905041)Natural Science Foundation of Chongqing China(Grant No.cstc2021jcyj-jqX0031)Interdiscipline Team Project under auspices of“Light of West”Program in Chinese Academy of Sciences(Grant No.xbzg-zdsys-202106).
文摘Rechargeable magnesium-ion(Mg-ion)batteries have attracted wide attention for energy storage.However,magnesium anode is still limited by the irreversible Mg plating/stripping procedure.Herein,a well-designed binary Bi_(2)O_(3)-Bi_(2)S_(3)(BO-BS)heterostructure is fulfilled by virtue of the cooperative interface and energy band engineering targeted fast Mg-ion storage.The built-in electronic field resulting from the asymmetrical electron distribution at the interface of electron-rich S center at Bi_(2)S_(3) side and electron-poor O center at Bi_(2)O_(3) side effectively accelerates the electrochemical reaction kinetics in the Mg-ion battery system.Moreover,the as-designed heterogenous interface also benefits to maintaining the electrode integrity.With these advantages,the BO-BS electrode displays a remarkable capacity of 150.36 mAh g^(−1) at 0.67 A g^(-1) and a superior cycling stability.This investigation would offer novel insights into the rational design of functional heterogenous electrode materials targeted the fast reaction kinetics for energy storage systems.
基金Supports from the National Natural Science Foundation of China (51872115 and 51802110)the National Key R&D Program of China (2016YFA0200400)+2 种基金the Jilin Province/Jilin University Co-construction Project-Funds for New Materials (SXGJSF20173, Branch-2/440050316A36)the Program for JLU Science and Technology Innovative Research Team (JLUSTIRT, 2017TD-09)“Double-First Class” Discipline for Materials Science & Engineering, are greatly acknowledged
文摘In dual-ion batteries (DIBs), energy storage is achieved by intercalation/de-intercalation of both cations and anions. Due to the mismatch between ion diameter and layer space of active materials, however, volume expansion and exfoliation always occur for electrode materials. Herein, an integrated electrode Co3O4/carbon fiber paper (CFP) is prepared as the anode of DIB. As the Co3O4 nanosheets grow on CFP substrate vertically, it promotes the immersion of electrolyte and shortens the pathway for ionic transport. Besides, the strong interaction between Co3O4 and CFP substrate reduces the possibility of sheet exfoliation. An integrated-electrode-based DIB is therefore packaged using Co3O4/CFP as anode and graphite as cathode. As a result, a high energy density of 72 Wh/kg is achieved at a power density of 150 W/kg. The design of integrated electrode provides a new route for the development of high-performance DIBs.
基金Project supported by the National Natural Science Foundation of China （Grant No 90607023）, Shanghai Pujiang Program （Grant No 05PJ14017）, SRF for R0CS, SEM, and the Micro/Nano-electronics Science and Technology Innovation Platform （985） and the Ministry of Education of China in the International Research Training Group ＂Materials and Concepts for Advanced Interconnects
文摘Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically. The capacitors exhibit a high density of about 6.05 fF/μm^2, a small leakage current of 4.8 × 10^-8 A/cm^2 at 3 V, a high breakdown electric field of 8.61 MV/cm as well as acceptable voltage coefficients of capacitance （VCCs） of 795 ppm/V2 and 268ppm/V at 1 MHz. The observed properties should be attributed to high-quality Al2O3 film and chemically stable TaN electrodes. Further, a logarithmically linear relationship between quadratic VCC and frequency is observed due to the change of relaxation time with carrier mobility in the dielectric. The conduction mechanism in the high field ranges is dominated by the Poole-Frenkel emission, and the leakage current in the low field ranges is likely to be associated with trap-assisted tunnelling. Meanwhile, the Al2O3 dielectric presents charge trapping under low voltage stresses, and defect generation under high voltage stresses, and it has a hard-breakdown performance.
