According to the thermal profile of actual multilevel interconnects, in this paper we propose a temperature distribution model of multilevel interconnects and derive an analytical crosstalk model for the distributed r...According to the thermal profile of actual multilevel interconnects, in this paper we propose a temperature distribution model of multilevel interconnects and derive an analytical crosstalk model for the distributed resistance inductance-capacitance （RLC） interconnect considering effect of thermal profile. According to the 65-nm complementary metal-oxide semiconductor （CMOS） process, we compare the proposed RLC analytical crosstalk model with the Hspice simulation results for different interconnect coupling conditions and the absolute error is within 6.5%. The computed results of the proposed analytical crosstalk model show that RCL crosstalk decreases with the increase of current density and increases with the increase of insulator thickness. This analytical crosstalk model can be applied to the electronic design automation （EDA） and the design optimization for nanometer CMOS integrated circuits.展开更多
We develop an interconnect crosstalk estimation model on the assumption of linearity for CMOS device. First, we analyze the terminal response of RC model on the worst condition from theS field to the time domain. The ...We develop an interconnect crosstalk estimation model on the assumption of linearity for CMOS device. First, we analyze the terminal response of RC model on the worst condition from theS field to the time domain. The exact 3 order coefficients inS field are obtained due to the interconnect tree model. Based on this, a crosstalk peak estimation formula is presented. Unlike other crosstalk equations in the literature, this formula is only used coupled capacitance and grand capacitance as parameter. Experimental results show that, compared with the SPICE results, the estimation formulae are simple and accurate. So the model is expected to be used in such fields as layout-driven logic and high level synthesis, performance-driven floorplanning and interconnect planning.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos.60725415 and 60971066)
文摘According to the thermal profile of actual multilevel interconnects, in this paper we propose a temperature distribution model of multilevel interconnects and derive an analytical crosstalk model for the distributed resistance inductance-capacitance （RLC） interconnect considering effect of thermal profile. According to the 65-nm complementary metal-oxide semiconductor （CMOS） process, we compare the proposed RLC analytical crosstalk model with the Hspice simulation results for different interconnect coupling conditions and the absolute error is within 6.5%. The computed results of the proposed analytical crosstalk model show that RCL crosstalk decreases with the increase of current density and increases with the increase of insulator thickness. This analytical crosstalk model can be applied to the electronic design automation （EDA） and the design optimization for nanometer CMOS integrated circuits.
基金SupportedbytheNationalHighTechnologyResearchandDevelopmentProgramofChina (863Plan) (863 SOC Y 3 3 2 )
文摘We develop an interconnect crosstalk estimation model on the assumption of linearity for CMOS device. First, we analyze the terminal response of RC model on the worst condition from theS field to the time domain. The exact 3 order coefficients inS field are obtained due to the interconnect tree model. Based on this, a crosstalk peak estimation formula is presented. Unlike other crosstalk equations in the literature, this formula is only used coupled capacitance and grand capacitance as parameter. Experimental results show that, compared with the SPICE results, the estimation formulae are simple and accurate. So the model is expected to be used in such fields as layout-driven logic and high level synthesis, performance-driven floorplanning and interconnect planning.
