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Impact of stray charge on interconnect wire via probability model of double-dot system
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作者 陈祥叶 蔡理 +1 位作者 曾强 王新桥 《Journal of Semiconductors》 EI CAS CSCD 2016年第2期14-19,共6页
The behavior of quantum cellular automata (QCA) under the influence of a stray charge is quantified. A new time-independent switching paradigm, a probability model of the double-dot system, is developed. Superiority... The behavior of quantum cellular automata (QCA) under the influence of a stray charge is quantified. A new time-independent switching paradigm, a probability model of the double-dot system, is developed. Superiority in releasing the calculation operation is presented by the probability model compared to previous stray charge analysis utilizing ICHA or full-basis calculation. Simulation results illustrate that there is a 186-nm-wide region surrounding a QCA wire where a stray charge will cause the target cell to switch unsuccessfully. The failure is exhibited by two new states' dominating the target cell. Therefore, a bistable saturation model is no longer applicable for stray charge analysis. 展开更多
关键词 quantum cellular automata interconnect wire stray charge probability model of double-dot system
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A novel interconnect optimal buffer insertion model considering the self-heating effect
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作者 张岩 董刚 +4 位作者 杨银堂 王宁 丁尧舜 刘晓贤 王凤娟 《Journal of Semiconductors》 EI CAS CSCD 2013年第11期118-123,共6页
Considering the self-heating effect, an accurate expression for the global interconnection resistance per unit length in terms of interconnection wire width and spacing is presented. Based on the proposed resistance m... Considering the self-heating effect, an accurate expression for the global interconnection resistance per unit length in terms of interconnection wire width and spacing is presented. Based on the proposed resistance model and according to the trade-off theory, a novel optimization analytical model of delay, power dissipation and bandwidth is derived. The proposed optimal model is verified and compared based on 90 nm, 65 nm and 40 nm CMOS technologies. It can be found that more optimum results can be easily obtained by the proposed model. This optimization model is more accurate and realistic than the conventional optimization models, and can be integrated into the global interconnection design ofnano-scale integrated circuits. 展开更多
关键词 self-heating effect interconnection wire resistance per unit length optimal model very large scale integration
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