Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

Low temperature photoluminescence （PL） measurements have been performed for a set of GaN/AlxGal xN quantum wells （QWs）. The experimental results show that the optical full width at half maximum （FWHM） increases relatively rapidly with increasing A1 composition in the AlxGal xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM＇s broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.

Fermi level tuning in Sn_(1-x)Pb_(x)Te/Pb heterostructure via changing interface roughness

Superconducting SnTe-type topological crystalline insulators(TCIs)are predicted to host multiple Majorana zero modes(MZMs)which can coexist in a single vortex.Fermi level(FL)close to the Dirac points of topological surface states is helpful for detecting MZMs.However,the TCI SnTe is a heavily p-type semiconductor which is very difficult to modify to n-type via doping or alloying.In this work,we fabricate the atomically flat Sn_(1-x)Pb_(x)Te/Pb heterostructure by molecular beam epitaxy,and make the p-type Sn_(1-x)Pb_(x)Te become n-type through changing the interface roughness.Using scanning tunnelling microscope,we find the Dirac points of Sn_(1-x)Pb_(x)Te/Pb heterostructure are always above the FL due to the Fermi level pinning(FLP)induced by topological surface states at atomically flat interface.After increasing the interface roughness,the FLP effect is suppressed and then the Dirac points of p-type Sn_(1-x)Pb_(x)Te can be tuned very close to or even below the FL.Our work provides a new method for tuning the FL of SnTe-type TCI which has potential application in novel topological superconductor device.

Compression failure conditions of concrete-granite combined body with different roughness interface

Bedrock and concrete lining are typical composite structures in the engineering field and the stability of the geological body and engineering body is directly connected to the mechanical properties of the composite body.Under this background,the study provides the transverse isotropic equivalent model of concrete-granite double-layer composite based on the notion of strain energy equivalence.Assuming that the strength failure of concrete and granite meets the Mohr-Coulomb criterion,then the strength failure model of the combined body considering the joint roughness coefficient(JRC)is derived,and the influences of JRC,the height ratio of concrete to granite,and confining pressure on the strength failure characteristics of the combined body are emphatically analyzed.Finally,the model applicability is illustrated by the uniaxial and triaxial compression tests on concrete monomer,granite monomer and concretegranite composite samples(CGCSs)with different JRCs.The results revealed that the compressive strength of the composite is closer to the concrete with lower strength in the combined body under different confining pressures.Adding interface roughness causes to raise the compressive strength of the composite due to interfacial adhesion between concrete and granite,and a slowing growth trend is observed in compressive strength as roughness.The model can provide a certain reference for the stability design and evaluation of engineering rock mass.

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊

A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.

Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well

We have theoretically studied the mobility limited by interface roughness scattering on two-dimensional electrons gas（2DEG） at a single heterointerface（triangle-shaped quantum well）.Our results indicate that,like the interface roughness scattering in a square quantum well,the roughness scattering at the Al_xGa_（1-x）As/GaAs heterointerface can be characterized by parameters of roughness height A and lateral A,and in addition by electric field F.A comparison of two mobilities limited by the interface roughness scattering between the present result and a square well in the same condition is given.

The effect of interface roughness on the perpendicular exchange bias of NiO/CoPt/Pt stacking structure

An orthogonal coupling structure of NiO/CoPt/Pt/glass with perpendicular exchange bias effect has been prepared.The exchange bias is found to be strongly dependent on the interface roughness between NiO and CoPt layer.The conventional inverse proportionality of the exchange bias field with the ferromagnetic thickness is not applicable to this top-pinned stacking structure.Moreover,an anomalous ferromagnetic thickness dependence of blocking temperature is also observed.A simulation on the basis of a spin configuration model with defects at the interface agrees well with the experimental observations.These findings suggest considerable contribution of the interface roughness to the perpendicular exchange bias.

Numerical Study on Effect of Non-uniform CMAS Penetration on TGO Growth and Interface Stress Behavior of APS TBCs

The penetration of CaO-MgO-Al_(2)O_(3)-SiO_(2)(CMAS)is one of the most significant factors that induce the failure of air-plasma-sprayed thermal barrier coatings(APS TBCs).The direct penetration of CMAS changes the thermal/mechanical properties of the top coat(TC)layer,which affects the thermal mismatch stress behavior and the growth of thermally grown oxide(TGO)at the TC/bond coat(BC)interface,thereby resulting in a more complicated interface stress state.In the present study,a two-dimensional global model of APS TBCs with half of the TC layer penetrated by CMAS is established to investigate the effect of non-uniform CMAS penetration on the interface stress behavior.Subsequently,a local model extracted from the global model is established to investigate the effects of interface morphologies and CMAS penetration depth.The results show that non-uniform CMAS penetration causes non-uniform TGO growth in APS TBCs,which consequently causes the stress behavior to vary along the interface.Furthermore,the CMAS pen-etration depth imposes a significant effect on the TC/TGO interface stress behavior,whereas the interface roughness exerts a prominent effect on the stress level at the BC/TGO interface under CMAS penetration.This study reveals the mechanism associated with the effect of non-uniform CMAS penetration on the interface stress behavior in APS TBCSs.

Rough interfaces and ultrasonic imaging logging behind casing

Ultrasonic leaky Lamb waves are sensitive to defects and debonding in multilayer media. In this study, we use the finite-difference method to simulate the response of flexural waves in the presence of defects owing to casing corrosion and rough fluctuations at the cement-formation interface. The ultrasonic obliquely incidence could effectively stimulate the flexural waves. The defects owing to casing corrosion change the amplitude of the early- arrival flexural wave, which gradually decrease with increasing defect thickness on the exterior walls and is the lowest when the defect length and wavelength were comparable. The scattering at the defects decreases the energy of flexural waves in the casing that leaks directly to fluids. For rough cement-formation interface, the early-arrival flexural waves do not change, whereas the late-arrival flexural waves have reduced amplitude owing to the scattering at rough interface.

Interaction mechanism of the interface between a deep buried sand and a paleo-weathered rock mass using a high normal stress direct shear apparatus

In order to evaluate the feasibility of safe mining close to the contact zone under reduced security coal pillar conditions at a coal mine in eastern China, the interaction mechanism of the interface between deep buried sand and a paleo-weathered rock mass was investigated in the laboratory by direct shear testing. A DRS-1 high pressure soil shear testing machine and orthogonal design method were used in the direct shear tests. Variance and range methods were applied to analyze the sensitivity of each factor that has an influence on the mechanical characters of the interface. The test results show that the normal pressure is the main influencing factor for mechanical characteristics of the interface, while the lithological characters and roughness are minor factors; the shear stress against shear displacement curve for the interface shows an overall hyperbola relationship, no obvious peak stress and dilatancy was observed.When the normal pressure is 6 MPa, the shear strengths of interfaces with different roughness are basically the same, and when the normal pressure is more than 8 MPa, the larger the roughness of the interface, the larger will be the shear strength; the shear strength has a better linear relationship with the normal pressure, which can be described by a linear Mohr–Coulomb criterion.

Electromagnetic scattering from two-layered rough interfaces with a PEC object:vertical polarization

Electromagnetic （EM） scattering from a stack of two rough interfaces separating a homogeneous medium with a perfectly electric conducting （PEC） object has been calculated through the method of moments for vertical polarization. Theoretical formulations of EM scattering from multi-layered rough interfaces with a PEC object have been derived in detail and the total fields and their normal derivatives on the rough interfaces are solved. The two-layered model is a special case. In this work, a Gaussian rough surface was applied to simulate the rough interface. A cylinder was located above, between or below the two-layered rough interfaces. Through numerical simulations, the validity of this work is demonstrated by comparing it with existing scattering models, which are special cases that include a PEC object located above/below a single-layered rough interface and two-layered rough interfaces without an object. Subsequently, the influences of characteristic parameters, such as the relative permittivity of the medium, as well as the average height between the two rough surfaces, on the bistatic scattering coefficient are discussed.

Influence of roughness on the detection of mechanical characteristics of low-k film by the surface acoustic waves

The surface acoustic wave （SAW） technique is a precise and nondestructive method to detect the mechanical charac- teristics of the thin low dielectric constant （low-k） film by matching the theoretical dispersion curve with the experimental dispersion curve. In this paper, the influence of sample roughness on the precision of SAW mechanical detection is inves- tigated in detail. Random roughness values at the surface of low-k film and at the interface between this low-k film and the substrate are obtained by the Monte Carlo method. The dispersive characteristic of SAW on the layered structure with rough surface and rough interface is modeled by numerical simulation of finite element method. The Young＇s moduli of the Black DiamondTM samples with different roughness values are determined by SAWs in the experiment. The results show that the influence of sample roughness is very small when the root-mean-square （RMS） of roughness is smaller than 50 nm and correlation length is smaller than 20 μm. This study indicates that the SAW technique is reliable and precise in the nondestructive mechanical detection for low-k films.

Electronic and magnetic properties at rough alloyed interfaces of Fe/Co on Au substrates: An augmented space study

We studied the interface electronic and magnetic properties of Fe/Co deposited on Au substrate and researched the effects of roughness at the interfaces within augmented space formalism （ASF）. The full calculation is carried out by recursion and tight-binding linear muffin tin orbital （TB-LMTO） methods. The amount of roughness is different at different atomic layers. The formalism is also applied to sharp interface, when interdiffusion of atoms is negligible. Our results of one monolayer transition metal agree with other reported results. A realistic rough interface is also modeled with three and four monolayers of transition metals, deposited on Au substrates.

High powerλ~8.5μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K

Robust quantum cascade laser(QCL)enduring high temperature continuous-wave(CW)operation is of critical importance for some applications.We report on the realization of lattice-matched InGaAs/InAlAs/InP QCL materials grown by metal-organic chemical vapor deposition(MOCVD).High interface quality structures designed for light emission at 8.5μm are achieved by optimizing and precise controlling of growth conditions.A CW output power of 1.04 W at 288 K was obtained from a 4 mm-long and 10μm-wide coated laser.Corresponding maximum wall-plug efficiency and threshold current density were 7.1%and 1.18 kA/cm2,respectively.The device can operate in CW mode up to 408 K with an output power of 160 mW.

The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures

To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.

Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_(1-x)As/GaAs/Al_xGa_(1-x)As quantum well

We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.

Quantum Analytical Theory for Giant Magnetoresistance in Magnetic Multilayered Cylindrical Systems

Taking into account the quantum size effects and considering three types of scattering from bulk impurities,rough surface and rough interfaces, we use quantum-statistical Green's function approach and Kubo theory to calculate the electronic conductivity and the giant magnetoresistance in magnetic multilayered cylindrical systems. It is found that in the limit of weakly scattering from impurities surface and interfaces, the total conductivity is given by a sum of conductivities of all the subbands and two spin-channels. For each subband and each spin-channel the scattering rate due to the impurities, surface and interfaces is added up.

Shot Noise in Ferromagnetic Superconductor Tunnel Junctions

In this paper, the superconducting order parameter and the energy spectrum of the Bogoliubov excitations are obtained from the Bogoliubov-de Gennes （BdG） equation for a ferromagnetic superconductor （FS）. Taking into account the rough interface scattering effect, we calculate the shot noise and the differential conductance of the normalmetal insulator ferromagnetic superconductor junction. It is shown that the exchange energy Eh in FS can lead to splitting of the differential shot noise peaks and the conductance peaks. The energy difference between the two splitting peaks is equal to 2Eh. The rough interface scattering strength results in descent of conductance peaks and the shot noise-to-current ratio but increases the shot noise.

A review of research progress in air-to-water sound transmission

International and domestic research progress in theory and experiment and applications of the air-to-water sound transmission are presented in this paper. Four classical numerical methods of calculating the underwater sound field gener- ated by an airborne source, i.e., the ray theory, the wave solution, the normal-mode theory and the wavenumber integration approach, are introduced. Effects of two special conditions, i.e., the moving airborne source or medium and the rough air-water interface, on the air-to-water sound transmission are reviewed. In experimental studies, the depth and range distributions of the underwater sound field created by different kinds of airborne sources in near-field and far-field, the longitudinal horizontal correlation of underwater sound field and application methods for inverse problems are reviewed.

Ultrasonic backward radiation profile on painted rough interface

Generalized Lamb surface waves are generated in a surface region when ultrasonic waves are incident to the layered substrates such as painted specimen in liquid. Then, backward radiated waves are returned to the direction of incidence by scattering and energy radiation of the surface waves. Hence, the backward radiation could be used in assessing the interracial state between layer and substrate because the surface wave is sensitive to the change of physical properties in a surface region. Painting surface treatment of commercial products and articles occasionally hide the surface region trouble such as roughness and crack. The evaluation of interfacial state under painting layer is very important in the prevention of great accidence, hence the evaluation technique should be nondestructive, fast and easy applicable to the fields. The backward radiations were measured for the painted glass with periodic interfacial roughness immersed in water tank. The effect of interfacial roughness on the angular pattern and frequency spectrum of the ultrasonic backward radiation was investigated to develop the nondestructive technique for interfacial roughness evaluation.

Broad area quantum cascade lasers operating in pulsed mode above 100℃ at λ ～ 4.7 μm

We demonstrate a broad area（400 μm） high power quantum cascade laser（QCL）. A total peak power of 62 W operating at room temperature is achieved at λ~ 4.7 μm. The temperature dependence of the peak power characteristic is given in the experiment, and also the temperature of the active zone is simulated by a finite-elementmethod（FEM）. We find that the interface roughness of the active core has a great effect on the temperature of the active zone and can be enormously improved using the solid source molecular beam epitaxy（MBE） growth system.