A diagram representation method is proposed to interpret the complicated charge pumping（CP） processes. The fast and slow traps in CP measurement are defined.Some phenomena such as CP pulse rise/fall time dependence,...A diagram representation method is proposed to interpret the complicated charge pumping（CP） processes. The fast and slow traps in CP measurement are defined.Some phenomena such as CP pulse rise/fall time dependence, frequency dependence,the voltage dependence for the fast and slow traps,and the geometric CP component are clearly illustrated at a glance by the diagram representation.For the slow trap CP measurement,there is a transition stage and a steady stage due to the asymmetry of the electron and hole capture,and the CP current is determined by the lower capturing electron or hole component.The method is used to discuss the legitimacy of the newly developed modified charge pumping method.展开更多
A simple standard reaction-diffusion（RD） model assumes an infinite oxide thickness and a zero initial interface trap density, which is not the case in real MOS devices.In this paper, we numerically solve the RD mode...A simple standard reaction-diffusion（RD） model assumes an infinite oxide thickness and a zero initial interface trap density, which is not the case in real MOS devices.In this paper, we numerically solve the RD model by taking into account the finite oxide thickness and an initial trap density.The results show that trap generation/ passivation as a function of stress/recovery time is strongly affected by the condition of the gate-oxide/poly-Si boundary.When an absorbent boundary is considered, the RD model is more consistent with the measured interfacetrap data from CMOS devices under bias temperature stress.The results also show that non-negligible initial traps should affect the power index n when a power law of the trap generation with the stress time, tn, is observed in the diffusion limited region of the RD model.展开更多
基金Project supported by the Micro/Nano-Electronics Science and Technology Innovation Platform of Fudan University,National Natural Science Foundation of China(No.60936005)the National VLSI Project(No.2009ZX02035-003).
文摘A diagram representation method is proposed to interpret the complicated charge pumping（CP） processes. The fast and slow traps in CP measurement are defined.Some phenomena such as CP pulse rise/fall time dependence, frequency dependence,the voltage dependence for the fast and slow traps,and the geometric CP component are clearly illustrated at a glance by the diagram representation.For the slow trap CP measurement,there is a transition stage and a steady stage due to the asymmetry of the electron and hole capture,and the CP current is determined by the lower capturing electron or hole component.The method is used to discuss the legitimacy of the newly developed modified charge pumping method.
基金supported by the Micro/Nanoelectronics Science & Technology Innovation Platform,Fudan University
文摘A simple standard reaction-diffusion（RD） model assumes an infinite oxide thickness and a zero initial interface trap density, which is not the case in real MOS devices.In this paper, we numerically solve the RD model by taking into account the finite oxide thickness and an initial trap density.The results show that trap generation/ passivation as a function of stress/recovery time is strongly affected by the condition of the gate-oxide/poly-Si boundary.When an absorbent boundary is considered, the RD model is more consistent with the measured interfacetrap data from CMOS devices under bias temperature stress.The results also show that non-negligible initial traps should affect the power index n when a power law of the trap generation with the stress time, tn, is observed in the diffusion limited region of the RD model.
