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Interlayer coupling effect in van der Waals heterostructures of transition metal dichalcogenides
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作者 Yuan-Yuan Wang Feng-Ping Li +2 位作者 Wei Wei Bai-Biao Huang Ying Dai 《Frontiers of physics》 SCIE CSCD 2021年第1期17-22,共6页
Van der Waals(vdW)heterobilayers formed by two-dimensional(2D)transition metal dichalcogenides(TMDCs)created a promising platform for various electronic and optical properties,ab initio band results indicate that the ... Van der Waals(vdW)heterobilayers formed by two-dimensional(2D)transition metal dichalcogenides(TMDCs)created a promising platform for various electronic and optical properties,ab initio band results indicate that the band offset of type-Ⅱband alignment in TMDCs vdW heterobilayer could be tuned by introducing Janus WSSe monolayer,instead of an external electric field.On the basis of symmetry analysis,the allowed interlayer hopping channels of TMDCs vdW heterobilayer were determined,and a four-level k·p model was developed to obtain the interlayer hopping.Results indicate that the interlayer coupling strength could be tuned by interlayer electric polarization featured by various band offsets.Moreover,the difference in the formation mechanism of interlayer valley excitons in different TMDCs vdW heterobilayers with various interlayer hopping strength was also clarified. 展开更多
关键词 van der Waals heterostructures transition metal dichalcogenides interlayer coupling effects k·p model interlayer exciton
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Enhanced interlayer neutral excitons and trions in MoSe_(2)/MoS_(2)/MoSe_(2)trilayer heterostructure 被引量:1
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作者 Biao Wu Haihong Zheng +4 位作者 Shaofei Li Junnan Ding Jun He Zongwen Liu Yanping Liu 《Nano Research》 SCIE EI CSCD 2022年第6期5640-5645,共6页
Van der Waals heterostructures have recently emerged,in which two distinct transitional metal dichalcogenide(TMD)monolayers are stacked vertically to generate interlayer excitons(IXs),offing new opportunites for the d... Van der Waals heterostructures have recently emerged,in which two distinct transitional metal dichalcogenide(TMD)monolayers are stacked vertically to generate interlayer excitons(IXs),offing new opportunites for the design of optoelectronic devices.However,the bilayer heterostructure with type-II band alignment can only produce low quantum yield.Here,we present the observation of interlayer neutral excitons and trions in the MoSe_(2)/MoS_(2)/MoSe_(2)trilayer heterostructure(Tri-HS).In comparison to the 8 K bilayer heterostructure,the addition of a MoSe_(2)layer to the Tri-HS can significantly increase the quantum yield of IXs.It is believed the two symmetrical type-II band alignments formed in the Tri-HS could effectively promote the IX radiation recombination.By analyzing the photoluminescence(PL)spectrum of the IXs at cryogenic temperature and the power dependence,the existence of the interlayer trions was confirmed.Our results provide a promising platform for the development of more efficient optoelectronic devices and the investigation of new physical properties of TMDs. 展开更多
关键词 transitional metal dichalcogenide trilayer heterostructure enhanced interlayer exciton effect photoluminescence interlayer exciton
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