Electron leakage still needs to be solved for In Ga N-based blue-violet laser diodes（LDs）, despite the presence of the electron blocking layer（EBL）. To reduce further electron leakage, a new structure of In Ga N-b...Electron leakage still needs to be solved for In Ga N-based blue-violet laser diodes（LDs）, despite the presence of the electron blocking layer（EBL）. To reduce further electron leakage, a new structure of In Ga N-based LDs with an In Ga N interlayer between the EBL and p-type waveguide layer is designed. The optical and electrical characteristics of these LDs are simulated, and it is found that the adjusted energy band profile in the new structure can improve carrier injection and enhance the effective energy barrier against electron leakage when the In composition of the In Ga N interlayer is properly chosen. As a result, the device performances of the LDs are improved.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61474110,61377020,61376089,61223005,and 61176126)the National Science Fund for Distinguished Young Scholars(No.60925017)+1 种基金the One Hundred Person Project of the Chinese Academy of Sciencesthe Basic Research Project of Jiangsu Province(No.BK20130362)
文摘Electron leakage still needs to be solved for In Ga N-based blue-violet laser diodes（LDs）, despite the presence of the electron blocking layer（EBL）. To reduce further electron leakage, a new structure of In Ga N-based LDs with an In Ga N interlayer between the EBL and p-type waveguide layer is designed. The optical and electrical characteristics of these LDs are simulated, and it is found that the adjusted energy band profile in the new structure can improve carrier injection and enhance the effective energy barrier against electron leakage when the In composition of the In Ga N interlayer is properly chosen. As a result, the device performances of the LDs are improved.
