We report an effective method to improve the formation of nickel stanogermanide（Ni Ge Sn） by the incorporation of a platinum（Pt） interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn th...We report an effective method to improve the formation of nickel stanogermanide（Ni Ge Sn） by the incorporation of a platinum（Pt） interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.展开更多
The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots （QDs） system are studied. AFM images show that the change of the ...The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots （QDs） system are studied. AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology. It is found that low indium composition in InGaAs interlayer can promote the formation of QDs, while high indium composition can inhibit the formation of QDs. The photoluminescence （PL） spectra of GaSb/InGaAs QDs at 8 K under low excitation power indicate that the third root of the excitation power is linear with the peak position, which provides a direct evidence for their luminescence belonging to type-Ⅱ material optical transition. The PL spectra at 8 K under an excitation power of 90row show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer, and the PL peak position is linear with the indium composition. The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 51672171 and 61604094the Natural Science Foundation of Shanghai under Grant No 14ZR1418300+2 种基金the National Key Basic Research Program of China under Grant No 2015CB921600the Eastern Scholar Program from the Shanghai Municipal Education Commissionthe Fok Ying Tung Education Foundation
文摘We report an effective method to improve the formation of nickel stanogermanide（Ni Ge Sn） by the incorporation of a platinum（Pt） interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.
基金Supported by the Science and Technology Planning Projects of Guangdong Province under Grant Nos 2014B050505020,2015B010114007 and 2014B090904045the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20134407110008+1 种基金the Guangzhou Science and Technology Project of Guangdong Province under Grant No 2016201604030027the Zhongshan Science and Technology Project of Guangdong Province under Grant No 2013B3FC0003
文摘The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots （QDs） system are studied. AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology. It is found that low indium composition in InGaAs interlayer can promote the formation of QDs, while high indium composition can inhibit the formation of QDs. The photoluminescence （PL） spectra of GaSb/InGaAs QDs at 8 K under low excitation power indicate that the third root of the excitation power is linear with the peak position, which provides a direct evidence for their luminescence belonging to type-Ⅱ material optical transition. The PL spectra at 8 K under an excitation power of 90row show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer, and the PL peak position is linear with the indium composition. The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer.
