8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of ...8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of the device, a lossy RC network is used at the input of the device. The developed internally matched power amplifier module exhibits 43dBm （20W） power output with a 7.3dB linear gain,38.1% PAIE,and combined power efficiency of 70.6% at 8GHz.展开更多
文摘8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of the device, a lossy RC network is used at the input of the device. The developed internally matched power amplifier module exhibits 43dBm （20W） power output with a 7.3dB linear gain,38.1% PAIE,and combined power efficiency of 70.6% at 8GHz.
