Suppression of intervalley scattering and enhanced phonon anharmonic interactions in 2D Bi_(2)TeSe_(2):Crystal-field symmetry and band convergence

The electron-phonon(el-ph)and phonon-phonon interactions play a key role in determining electronic and thermal transport properties,respectively,in promising two-dimensional(2D)semiconductor de-vices.In this study,we investigated el-ph interactions using Wannier-Fourier interpolation method and renormalized phonon scattering considering finite-temperature effects in Bi_(2)TeSe_(2)monolayer.The re-sults show that the optical phonon modes dominate the carrier scattering,where level repulsion induced by crystal field splitting and spin-orbit coupling(SOC)effect effectively suppresses intervalley scattering,leading to high hole mobility.Moreover,the strong anharmonicity in Bi_(2)TeSe_(2)monolayer results in the temperature-dependent softening of its optical phonons,along with a corresponding variation in interatomic force constants(IFCs).As a result,the lattice thermal conductivity is remarkably low and exhibits weak temperature dependence.Finally,the predicted dimensionless thermoelectric figure of merit exceeds unity in the range of 200-800 K,indicating the potential of Bi_(2)TeSe_(2)monolayer for thermoelectric applications.This work provides new insights into the elimination of intervalley scat-tering by crystal field splitting and SOC effects,and paves the way for the evaluation of thermoelectric properties of materials with complex scattering mechanisms and strong anharmonicity.

Anisotropic Intervalley Plasmon Excitations in Graphene

We investigate theoretically the intervalley plasmon excitations(IPEs) in graphene monolayer within the random-phase approximation. We derive an analytical expression of the real part of the dielectric function. We find a lowenergy plasmon mode with a linear anisotropic dispersion which depends on the Fermi energy and the dielectric constant of substrate. The IPEs show strongly anisotropic behavior, which becomes significant around the zigzag crystallographic direction. More interestingly, the group velocity of IPE varies from negative to positive, and vanishes at special energy.

Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide(In Sb) and indium arsenide(In As) in an intense terahertz(THz) field are studied by using the method of ensemble Monte Carlo(EMC)at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 k V/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in In Sb, and only 5 THz in In As, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in In Sb, while impact ionization and intervalley scattering work together in In As. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field.

Linear and nonlinear characteristics of time-resolved photoluminescence modulation by terahertz pulse

The linear and nonlinear characteristics of time-resolved photoluminescence （PL） of n-type bulk semiconductor GaAs modulated with terahertz （THz） pulse are studied by using an ensemble Monte Carlo （EMC） method. In this paper the center energy valley （Г valley） electron concentration changes with the pulse delay time, sampling time and the outfield are mainly discussed. The results show that the sampling time and the THz field should exceed certain thresholds to effectively excite photoluminescence quenching （PLQ）. Adopting a direct current （DC） field makes the sampling time threshold shortened and the linear range of THz field-modulation PL expanded. Moreover, controlling the sampling time and the outfield intensity can improve the linear quality： with forward time, the larger outfield is used; with backward time, the smaller outfield is used. This study can provide a theoretical basis of THz field linear modulation in a larger range for new light emitting devices.