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Strain effects on performance of electroabsorption optical modulators
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作者 Kambiz ABEDI 《Frontiers of Optoelectronics》 EI CSCD 2013年第3期282-289,共8页
This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells ... This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells (AICD-SQWs) active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio (ER) and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric (TE) input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain. 展开更多
关键词 asymmetric intra-step-barrier coupled double strained quantum wells (AICD-SQWs) electroabsorption modulators strain insertion loss
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