INVESTIGATION ON MICROELECTRODES Ⅻ THE DETERMINATION OF THE INVERSE CURRENT IN THE PROCESSES OF STEADY-STATE OR QUASI-STEADY-STATE

A simple method for determining the inverse current of cyclic voltammetry in the processes of steady-state or quasi-steady-state was presented. The experimental result verified the theoretical relation or inverse and forward current at microelectrode. Their ratio is proportional to the square root of scan rate.

Inverse problem of pulsed eddy current field of ferromagnetic plates

To determine the wall thickness, conductivity and permeability of a ferromagnetic plate, an inverse problem is established with measured values and calculated values of time-domain induced voltage in pulsed eddy current testing on the plate. From time-domain analytical expressions of the partial derivatives of induced voltage with respect to parameters,it is deduced that the partial derivatives are approximately linearly dependent. Then the constraints of these parameters are obtained by solving a partial linear differential equation. It is indicated that only the product of conductivity and wall thickness, and the product of relative permeability and wall thickness can be determined accurately through the inverse problem with time-domain induced voltage. In the practical testing, supposing the conductivity of the ferromagnetic plate under test is a fixed value, and then the relative variation of wall thickness between two testing points can be calculated via the ratio of the corresponding inversion results of the product of conductivity and wall thickness. Finally, this method for wall thickness measurement is verified by the experiment results of a carbon steel plate.

Conduction Mechanism Analysis of Inversion Current in MOS Tunnel Diodes

Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO2) in the form of MOS (metal(Al)/SiO2/p type crystalline silicon) structure. Both phenomena were based on minority carriers (electrons in this case) and studied through DC current-applied bias voltage (I-V) and AC admittance measurements in dark/light condition as a function of ambient temperature (295 - 380 K). Either of the cases was the departure of traditional MOS analysis, manifesting themselves in the inversion regime of MOS diode. Increase in frequency/temperature/light intensity within dark and light conditions led to weaken the maxima of hump in C-V curves and finally turned into deep depletion mode after exceeding threshold value of frequency/temperature/light intensity. In resumed conditions, supplementary I-V measurements were carried out to describe the generation and conduction mechanism(s) for minority carriers (electrons).

Comparisons of STRETCH meat grinders based on two different topologies of ICCOS

Inductive energy storage systems （IES）require opening switches which are technically much more difficult to realize than closing switches. Institute of Advanced Technology （ IAT ） puts forward a meat grinder with an inductive pulse power topology called slow transfer of energy through capacitive hybrid （STRETCH）. In this topology, an integrated gate-commutated thyristor （IGCT） is capable of breaking the charging currents on the order of 4 kA, and it may encounter difficulties in expanding to higher energy systems. German-French Institute of Saint Louis （ISL） has developed a high-power opening switch based on standard high-power thyristors by using their so-called inverse current commutation with semiconductor devices （ICCOS） countercurrent commutation principle. Two topologies of the STRETCH meat grinder with ICCOS are analyzed. And they are compared based on the voltage across the main switch, the current multiplication factor and other aspects by u- sing Matlab simulations. The advantages and disadvantages of the two topologies are shown through the comparisons. Therefore a more suitable topology can be chosen for realistic applications accord- ing to their performances.