In field emission devices, the emission current sometimes degrades with the time. The mechanism of the current degradation is complicated. In this paper, a program is used to simulate the movement of the electron beam...In field emission devices, the emission current sometimes degrades with the time. The mechanism of the current degradation is complicated. In this paper, a program is used to simulate the movement of the electron beam from a field emitter. According to the current distribution and the trajectories of the primary electron beam, it is shown that the residual gas is ionized and the ion pairs are generated. The trajectories of the positive ions are simulated. With the different locations and kinetic energy of i...展开更多
Ion bombardment analysis of perovskite materials is challenging owing to their peculiar structure.This shortcoming renders the reliability on the technique somewhat questionable.In this research,three structured modif...Ion bombardment analysis of perovskite materials is challenging owing to their peculiar structure.This shortcoming renders the reliability on the technique somewhat questionable.In this research,three structured modifications(i.e.,scan angle,low energy,and large ion bombardment)were adopted to improve the ion bombardment analysis of 99,999 ions using Monte Carlo simulations.The modified technique was used to analyze the effects of a chemically pressurized‘‘A’’site in the perovskite lattice system.The LaCeTh0.1Cu2Oy compound was used in this experiment.Despite the low probing energy,it was observed that the high number of ions bombarding the material resulted in external pressure on the lattice structure of the material.Moreover,the chemically pressurized‘‘A’’site perovskite material was characterized by lattice mismatch,lattice fluctuations,grain boundary collapse,and oxygen displacement.The novel discovery of this research is the inter-and intra-extended lattice mismatches that are likely to connect.Hence,further investigation of the connection between inter-and intraextended lattice mismatches is recommended as they may enable fabrication of room-temperature superconductors.展开更多
Under 5 keV Ar ion bombardment of a 92Mo-100Mo target, we have investigated isotopic angular effects by means of the static and the dynamic Monte Carlo programs. Our calculated results are in quantitative agreement wi...Under 5 keV Ar ion bombardment of a 92Mo-100Mo target, we have investigated isotopic angular effects by means of the static and the dynamic Monte Carlo programs. Our calculated results are in quantitative agreement with the measured and other calculated results. The conclusion consistences among theories. simulations and measurements are also discussed.展开更多
The distribution of plasma density in the vicinity of the W Mo alloy source in the process of double glow discharge plasma surface alloying was diagnosed using the moveable Langmuir probe. The sputtering law, surface ...The distribution of plasma density in the vicinity of the W Mo alloy source in the process of double glow discharge plasma surface alloying was diagnosed using the moveable Langmuir probe. The sputtering law, surface composition and morphological variation of the W Mo alloy source was studied. The experimental results show that there exists obvious preferential sputtering on the surface of the W Mo alloy source under the argon ion bombardment; the stable period is reached after a transitional period, and the preferential sputtering occurs in a definite range of composition(mole fraction): 70%～75% Mo, 22%～25% W; there appears segregation on the surface of the W Mo alloy source.展开更多
Booming low-power electric propulsion systems require 1–2 A hollow cathodes.Such cathodes are expected to go through more frequent ignitions in the low orbit,but the impact of cyclic ignitions on such 1–2 A barium t...Booming low-power electric propulsion systems require 1–2 A hollow cathodes.Such cathodes are expected to go through more frequent ignitions in the low orbit,but the impact of cyclic ignitions on such 1–2 A barium tungsten hollow cathodes with a heater was not clear.In this study,a 12,638-cyclic ignition test and a 6,000-hour-long life test on two identical cathodes were carried out.The discharge voltage of the cathode and the erosion of the orifice after cyclic ignition were all larger than that of the cathode after stable operation.This indicated that the impact of cycle ignition on the discharge performance of a low current BaO-W cathode with a heater was higher than that of stable operation.The results of the ion energy distribution function measured during the ignition period indicated that the main reason for the orifice expansion was ion bombardment.Therefore,it was necessary to pay attention to the number of ignitions for the lifetime of this kind of cathode.展开更多
Ions bombardment is very important in thin films and surface processing. The ion energy and ion flux are two important parameters in ion bombardment. The ion current density mainly dependent on the plasma density give...Ions bombardment is very important in thin films and surface processing. The ion energy and ion flux are two important parameters in ion bombardment. The ion current density mainly dependent on the plasma density gives the number of energetic ions bombarding the substrate. The self-bias voltage in plasma sheath accelerates plasma ions towards the substrate. RF discharge can increase plasma density and RF bias can also provide the insulator substrate with a plasma sheath. In order to choose and control ion energy, ion density, the angle of incidence, and ion species, ion beam sources are used. New types of electrodeless ion sources (RF, MW, ECR-MW) have been introduced in detail. In the last, the effects of ion bombardment on thin films and surface processing are presented.展开更多
Ti-B-N film was deposited on W18Cr4 V high speed steels by using N ion bombardment on an EB-ion plating Ti-B film. It was found that Ti, B and N in the film are homogeneous, but there exists an extended diffusion zone...Ti-B-N film was deposited on W18Cr4 V high speed steels by using N ion bombardment on an EB-ion plating Ti-B film. It was found that Ti, B and N in the film are homogeneous, but there exists an extended diffusion zone at the film / substrate interface on the basis of the results of IPMA, EPMA and TEM. The boron content of the film is 9.5 at.%, as given by nuclear reaction analysis. The ratio of nitrogen to titanium of the film is about 0.94, as given by EPMA. The width of a high N concentration region in the Ti-B-N film fowned by N ion bombardment of a Ti-B film is about 100 nm; N and Ti penetrates into the substrate, resulting in a wide interfacial diffusion zone. The width of the diffusion zone obtained with TEM and EDAX is about 20 nm. μ-diffraction patterns of the interface show that FeTi, Fe_2 Ti, and Ti_2N existin the interfacial diffusion zone. TEM observation of film and interface show a dense and fine nano-crystalline structure of the film and a dense close interfactal bonding of the film to substrate. Electron diffraction patterns and the values of electrun binding energy by XPS show that the film consists mainly of fcc TiN, with dispersed simple orthorhombic TiB, cubic BN and simple hexagonal Ti-B-N phases. The results show that the N ion hombardment extends the film / substrate interfacial diffusion zone and stimulates chemical reaction both in the film and interface.展开更多
Hydrogenated microcrystalline silicon （mc-Si：H） thin films were deposited by inductively coupled plasma assistant magnetron sputtering （ICP-MS） in an Ar-H2 gas mixture. The role of ion bombardment in the growth o...Hydrogenated microcrystalline silicon （mc-Si：H） thin films were deposited by inductively coupled plasma assistant magnetron sputtering （ICP-MS） in an Ar-H2 gas mixture. The role of ion bombardment in the growth of mc-Si：H films was studied with increasing negative bias voltages on the substrate holder from 0 to -100 V. Raman scattering, X-ray diffraction （XRD）, Fourier transform infrared （FTIR） spectroscopy and transmission electron microscopy （TEM） were performed to investigate the microstructure changes of deposited Si films. Raman scattering showed that the high energy ion bombardment resulted in crystalline degradation of Si films. The XRD results showed the decrease and even elimination of preferential growth orientation of crystalline Si films with ion bombardment energy increase. The SiH bonding configuration changes and the increase of bonded hydrogen concentration were determined with the analysis of FTIR spectra. Furthermore, the dramatic evolution of cross-sectional morphology of Si thin films was detected by TEM observation.展开更多
Applying negative bias voltages caused significant microstructure changes in arc ion plated CrN films. Nanocrystalline microstructures were obtained by adjusting the negative bias voltage. Structural characterizations...Applying negative bias voltages caused significant microstructure changes in arc ion plated CrN films. Nanocrystalline microstructures were obtained by adjusting the negative bias voltage. Structural characterizations of the films were carried out using X-ray diffractometry (XRD) and high-resolution transmission electron microscopy (HR-TEM). The results indicated that increasing ion bombardment by applying negative bias voltages resulted in the formation of defects in the CrN films, inducing microstructure evolution from micro-columnar to nanocrystalline. The microhardness and residual stresses of the films were also affected. Based on the experimental results, the evolution mechanisms of the film microstructure and properties were discussed by considering ion bombardment effects.展开更多
The irradiation effects of Ar＋, He＋, and S＋ with energy from 10 eV to 180 eV on n-InP（100） surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-...The irradiation effects of Ar＋, He＋, and S＋ with energy from 10 eV to 180 eV on n-InP（100） surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-InP surface, damage on the surface, displacement of the Fermilevel and formation of sulfur species on S＋ exposed surface are found and studied. Successive annealing is done to suppress the surface states introduced by S＋ exposure. However, it is unsuccessful in removing the damage caused by noble ions. Besides, S＋ ions can efficiently repair the Ar＋ damaged surface, and finally form a fine 2×2 InP surface.展开更多
Objective The high energy ion bombardment technique is applied to enhancing the adhesion of the tetrahedral amorphous carbon (TAC) films deposited by the filtered cathode vacuum arc (FCVA). Methods The abrasion method...Objective The high energy ion bombardment technique is applied to enhancing the adhesion of the tetrahedral amorphous carbon (TAC) films deposited by the filtered cathode vacuum arc (FCVA). Methods The abrasion method, scratch method, heating and shaking method as well as boiling salt solution method is used to test the adhesion of the TAC films on various material substrates. Results The test results show that the adhesion is increased as the ion bombardment energy increases. However, if the bombardment energy were over the corresponding optimum value, the adhesion would be enhanced very slowly for the harder material substrates and drops quickly, for the softer ones. Conclusion The optimum values of the ion bombardment energy are larger for the harder materials than that for the softer ones.展开更多
A two-dimensional dose detector for ion beam is required in many high energy density physics experiments.As a solid detector,the GAFChromic film offers a good spatial resolution and dosimetric accuracy.For an absolute...A two-dimensional dose detector for ion beam is required in many high energy density physics experiments.As a solid detector,the GAFChromic film offers a good spatial resolution and dosimetric accuracy.For an absolute dose measurement,the relative effectiveness,which represents the darkening efficiency of the film to a radiation source,needs to be taken into consideration.In this contribution,the dose-response of HD-V2 to argon ions is presented for the first time.The calibration was taken over the dose range of 65 Gy-660 Gy with 8-keV argon ions.The response of net optical density is from 0.01 to 0.05.Triple-color dose-response functions are derived.The relative effectiveness for the argon ion beams is about 5%,much lower than that of protons and carbon ions.To explain this effect,the inactivation probability based on track theory of ion bombardment is proposed.Furthermore,a theoretical prediction of the relative effectiveness for single ion is presented,showing the dependence of the darkening efficiency on the atomic number and the incident energy of ions.展开更多
The samples consisting of 100nm Al or Ag film on optical glass substrate were irradiated by a beam of Xe 5×10<sup>15</sup> to 2×10<sup>16</sup> cm<sup>-2</sup> with energy...The samples consisting of 100nm Al or Ag film on optical glass substrate were irradiated by a beam of Xe 5×10<sup>15</sup> to 2×10<sup>16</sup> cm<sup>-2</sup> with energy 320 keV. The adhesion of films on substrates was tested by Xe<sup>+</sup> irradiation. Optical character was measured by spectrophotometer. The ion mixing amount was measured by RBS. The results showed that after ion irradiating the adhesion of the film on the glass is enhanced. The adherent strength is greater than 10 kg/cm<sup>2</sup>. The thermal stability of the films is good. The irradiated film is more optically efficient, the surface is smooth and rendered more corrosion resistance. The mechanism of the film adhesion was discussed.展开更多
文摘In field emission devices, the emission current sometimes degrades with the time. The mechanism of the current degradation is complicated. In this paper, a program is used to simulate the movement of the electron beam from a field emitter. According to the current distribution and the trajectories of the primary electron beam, it is shown that the residual gas is ionized and the ion pairs are generated. The trajectories of the positive ions are simulated. With the different locations and kinetic energy of i...
基金partial sponsorship of the Covenant University,Nigeria,and University of Johannesburg
文摘Ion bombardment analysis of perovskite materials is challenging owing to their peculiar structure.This shortcoming renders the reliability on the technique somewhat questionable.In this research,three structured modifications(i.e.,scan angle,low energy,and large ion bombardment)were adopted to improve the ion bombardment analysis of 99,999 ions using Monte Carlo simulations.The modified technique was used to analyze the effects of a chemically pressurized‘‘A’’site in the perovskite lattice system.The LaCeTh0.1Cu2Oy compound was used in this experiment.Despite the low probing energy,it was observed that the high number of ions bombarding the material resulted in external pressure on the lattice structure of the material.Moreover,the chemically pressurized‘‘A’’site perovskite material was characterized by lattice mismatch,lattice fluctuations,grain boundary collapse,and oxygen displacement.The novel discovery of this research is the inter-and intra-extended lattice mismatches that are likely to connect.Hence,further investigation of the connection between inter-and intraextended lattice mismatches is recommended as they may enable fabrication of room-temperature superconductors.
文摘Under 5 keV Ar ion bombardment of a 92Mo-100Mo target, we have investigated isotopic angular effects by means of the static and the dynamic Monte Carlo programs. Our calculated results are in quantitative agreement with the measured and other calculated results. The conclusion consistences among theories. simulations and measurements are also discussed.
文摘The distribution of plasma density in the vicinity of the W Mo alloy source in the process of double glow discharge plasma surface alloying was diagnosed using the moveable Langmuir probe. The sputtering law, surface composition and morphological variation of the W Mo alloy source was studied. The experimental results show that there exists obvious preferential sputtering on the surface of the W Mo alloy source under the argon ion bombardment; the stable period is reached after a transitional period, and the preferential sputtering occurs in a definite range of composition(mole fraction): 70%～75% Mo, 22%～25% W; there appears segregation on the surface of the W Mo alloy source.
基金supported by the Key Projects of Schoolenterprise Joint Fund(No.U22B20120)the National Science Fund for Distinguished Young Scholars(No.52107141)。
文摘Booming low-power electric propulsion systems require 1–2 A hollow cathodes.Such cathodes are expected to go through more frequent ignitions in the low orbit,but the impact of cyclic ignitions on such 1–2 A barium tungsten hollow cathodes with a heater was not clear.In this study,a 12,638-cyclic ignition test and a 6,000-hour-long life test on two identical cathodes were carried out.The discharge voltage of the cathode and the erosion of the orifice after cyclic ignition were all larger than that of the cathode after stable operation.This indicated that the impact of cycle ignition on the discharge performance of a low current BaO-W cathode with a heater was higher than that of stable operation.The results of the ion energy distribution function measured during the ignition period indicated that the main reason for the orifice expansion was ion bombardment.Therefore,it was necessary to pay attention to the number of ignitions for the lifetime of this kind of cathode.
基金The project supported by the National Nature Science Foundation of China(No.19835030)
文摘Ions bombardment is very important in thin films and surface processing. The ion energy and ion flux are two important parameters in ion bombardment. The ion current density mainly dependent on the plasma density gives the number of energetic ions bombarding the substrate. The self-bias voltage in plasma sheath accelerates plasma ions towards the substrate. RF discharge can increase plasma density and RF bias can also provide the insulator substrate with a plasma sheath. In order to choose and control ion energy, ion density, the angle of incidence, and ion species, ion beam sources are used. New types of electrodeless ion sources (RF, MW, ECR-MW) have been introduced in detail. In the last, the effects of ion bombardment on thin films and surface processing are presented.
文摘Ti-B-N film was deposited on W18Cr4 V high speed steels by using N ion bombardment on an EB-ion plating Ti-B film. It was found that Ti, B and N in the film are homogeneous, but there exists an extended diffusion zone at the film / substrate interface on the basis of the results of IPMA, EPMA and TEM. The boron content of the film is 9.5 at.%, as given by nuclear reaction analysis. The ratio of nitrogen to titanium of the film is about 0.94, as given by EPMA. The width of a high N concentration region in the Ti-B-N film fowned by N ion bombardment of a Ti-B film is about 100 nm; N and Ti penetrates into the substrate, resulting in a wide interfacial diffusion zone. The width of the diffusion zone obtained with TEM and EDAX is about 20 nm. μ-diffraction patterns of the interface show that FeTi, Fe_2 Ti, and Ti_2N existin the interfacial diffusion zone. TEM observation of film and interface show a dense and fine nano-crystalline structure of the film and a dense close interfactal bonding of the film to substrate. Electron diffraction patterns and the values of electrun binding energy by XPS show that the film consists mainly of fcc TiN, with dispersed simple orthorhombic TiB, cubic BN and simple hexagonal Ti-B-N phases. The results show that the N ion hombardment extends the film / substrate interfacial diffusion zone and stimulates chemical reaction both in the film and interface.
基金supported by the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No.707015)the University Innovative Research Team Project of Liaoning Province,the National Natural Science Foundation of China (Grant Nos.11204024 and 11004021)the Fundamental Research Funds for the Central Universities (Grant Nos. DC12010208 and DC120101173)
文摘Hydrogenated microcrystalline silicon （mc-Si：H） thin films were deposited by inductively coupled plasma assistant magnetron sputtering （ICP-MS） in an Ar-H2 gas mixture. The role of ion bombardment in the growth of mc-Si：H films was studied with increasing negative bias voltages on the substrate holder from 0 to -100 V. Raman scattering, X-ray diffraction （XRD）, Fourier transform infrared （FTIR） spectroscopy and transmission electron microscopy （TEM） were performed to investigate the microstructure changes of deposited Si films. Raman scattering showed that the high energy ion bombardment resulted in crystalline degradation of Si films. The XRD results showed the decrease and even elimination of preferential growth orientation of crystalline Si films with ion bombardment energy increase. The SiH bonding configuration changes and the increase of bonded hydrogen concentration were determined with the analysis of FTIR spectra. Furthermore, the dramatic evolution of cross-sectional morphology of Si thin films was detected by TEM observation.
基金Project(2010-0001-226) supported by the National Core Research Center (NCRC) Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and TechnologyProject supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Korea
文摘Applying negative bias voltages caused significant microstructure changes in arc ion plated CrN films. Nanocrystalline microstructures were obtained by adjusting the negative bias voltage. Structural characterizations of the films were carried out using X-ray diffractometry (XRD) and high-resolution transmission electron microscopy (HR-TEM). The results indicated that increasing ion bombardment by applying negative bias voltages resulted in the formation of defects in the CrN films, inducing microstructure evolution from micro-columnar to nanocrystalline. The microhardness and residual stresses of the films were also affected. Based on the experimental results, the evolution mechanisms of the film microstructure and properties were discussed by considering ion bombardment effects.
基金ACKNOWLEDGMENTS This work was supported by the National Natural Science Foundation of China （No.11275024） and the Ministry of Science and Technology of China （No.2013YQ03059503 and No.2011AA120101）. The authors would like to thank Prof. R. W. M. Kwok from the Chinese University of Hong Kong.
文摘The irradiation effects of Ar＋, He＋, and S＋ with energy from 10 eV to 180 eV on n-InP（100） surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-InP surface, damage on the surface, displacement of the Fermilevel and formation of sulfur species on S＋ exposed surface are found and studied. Successive annealing is done to suppress the surface states introduced by S＋ exposure. However, it is unsuccessful in removing the damage caused by noble ions. Besides, S＋ ions can efficiently repair the Ar＋ damaged surface, and finally form a fine 2×2 InP surface.
文摘Objective The high energy ion bombardment technique is applied to enhancing the adhesion of the tetrahedral amorphous carbon (TAC) films deposited by the filtered cathode vacuum arc (FCVA). Methods The abrasion method, scratch method, heating and shaking method as well as boiling salt solution method is used to test the adhesion of the TAC films on various material substrates. Results The test results show that the adhesion is increased as the ion bombardment energy increases. However, if the bombardment energy were over the corresponding optimum value, the adhesion would be enhanced very slowly for the harder material substrates and drops quickly, for the softer ones. Conclusion The optimum values of the ion bombardment energy are larger for the harder materials than that for the softer ones.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1930107 and 11827807)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grants Nos.XDA25030100,XDA25010000,and XDB16010200).
文摘A two-dimensional dose detector for ion beam is required in many high energy density physics experiments.As a solid detector,the GAFChromic film offers a good spatial resolution and dosimetric accuracy.For an absolute dose measurement,the relative effectiveness,which represents the darkening efficiency of the film to a radiation source,needs to be taken into consideration.In this contribution,the dose-response of HD-V2 to argon ions is presented for the first time.The calibration was taken over the dose range of 65 Gy-660 Gy with 8-keV argon ions.The response of net optical density is from 0.01 to 0.05.Triple-color dose-response functions are derived.The relative effectiveness for the argon ion beams is about 5%,much lower than that of protons and carbon ions.To explain this effect,the inactivation probability based on track theory of ion bombardment is proposed.Furthermore,a theoretical prediction of the relative effectiveness for single ion is presented,showing the dependence of the darkening efficiency on the atomic number and the incident energy of ions.
文摘The samples consisting of 100nm Al or Ag film on optical glass substrate were irradiated by a beam of Xe 5×10<sup>15</sup> to 2×10<sup>16</sup> cm<sup>-2</sup> with energy 320 keV. The adhesion of films on substrates was tested by Xe<sup>+</sup> irradiation. Optical character was measured by spectrophotometer. The ion mixing amount was measured by RBS. The results showed that after ion irradiating the adhesion of the film on the glass is enhanced. The adherent strength is greater than 10 kg/cm<sup>2</sup>. The thermal stability of the films is good. The irradiated film is more optically efficient, the surface is smooth and rendered more corrosion resistance. The mechanism of the film adhesion was discussed.
