Mo silicides Mo_5Si_3 with high quality were prepared using ion beamdeposition equipment with two Filter Metal Vacuum Are Deposition (FMEVAD). When the number ofalternant deposition times was 198, total thickness of t...Mo silicides Mo_5Si_3 with high quality were prepared using ion beamdeposition equipment with two Filter Metal Vacuum Are Deposition (FMEVAD). When the number ofalternant deposition times was 198, total thickness of the coating is 40nm. The coatings withdroplet free can be readily obtained, so the surface is smooth. TEM observation shows that Mo and Sialternant deposition coating is compact structure. The fine Mo silicide grains densely distributedin the coating. The coating adherence on silicon is excellent.展开更多
Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (IAD) at room temperat...Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (IAD) at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in (400), (440) directions.展开更多
The Cu25 Nb75 and Ni45Nb55 amorphous films with about 500nm thickness were prepared by ion beam assisted deposition (IBAD). Potentiodynamic polarization measurement was adopted to investigate the corrosion resistance ...The Cu25 Nb75 and Ni45Nb55 amorphous films with about 500nm thickness were prepared by ion beam assisted deposition (IBAD). Potentiodynamic polarization measurement was adopted to investigate the corrosion resistance of samples and the tests were carried out respectively in 1mol/L H2SO4 and NaOH aquatic solution. The corrosion performance of the amorphous films was compared with that of multilayered and pure Nb films. Experimental results indicated that the corrosion resistance of amorphous films was better than that of the corresponding multilayers and pure Nb films for both Ni-Nb system with negative heat of formation and Cu-Nb system with positive heat of formation.展开更多
Ion beam assisted deposition technique (IBAD) was utilized to systematically study amorphization in binary metal systems of Nb-magnetic element, i.e., Nb-M (M=Fe, Co or Ni). The glass forming range termed as Nb fracti...Ion beam assisted deposition technique (IBAD) was utilized to systematically study amorphization in binary metal systems of Nb-magnetic element, i.e., Nb-M (M=Fe, Co or Ni). The glass forming range termed as Nb fraction of Nb-Fe system was about 34at.% to 56at.%, that of Nb-Co system was about 32at.% to 72at.% and that of Nb-Ni about 20at. % to 80at. %. Similar percolation patterns were found in amorphous alloy films. The fractal dimensions of the percolation patterns approach to 2, which indicates 2-D layer growth for amorphous phases. It is regarded that the assisted Ar+ ion beam during the deposition process plays important role for the 2-D layer growth. Some metastable crystalline phases were obtained in these three systems by IBAD, e.g., bcc supersaturated solid solutions in Nb-Fe and Nb-Co systems, fcc and hcp phases in Nb-Co and Nb-Ni systems. The formation and competing between the amorphous and the metastable crystalline phases were determined by both the phases' thermodynamic states in binary metal systems and kinetics during IBAD process.展开更多
A Ti-BN complex cathode is made from Ti and h-BN powders by the powder metallurgy technology, and TiBN coating is obtained by plasma immersion ion implantation and deposition with this Ti-BN composite cathode. The TiB...A Ti-BN complex cathode is made from Ti and h-BN powders by the powder metallurgy technology, and TiBN coating is obtained by plasma immersion ion implantation and deposition with this Ti-BN composite cathode. The TiBN coating shows a self-forming multilayered nanocomposite structure while with relative uniform elemental distributions. High resolution transmission electron microscopy images reveal that the multilayered structure is derived from different grain sizes in the nanocomposite. Due to the existence of h-BN phase, the friction coefficient of the coating is about 0.25.展开更多
C ^+ ion beam-assisted deposition was utilized to prepare deposit diamond-like carbon ( DLC ) film. With the help of a series of experiments such as Raman spectroscopy, FT-IR spectroscopy, AFM and nanoindentation ,...C ^+ ion beam-assisted deposition was utilized to prepare deposit diamond-like carbon ( DLC ) film. With the help of a series of experiments such as Raman spectroscopy, FT-IR spectroscopy, AFM and nanoindentation , the DLC film has been recognized as hydrogenated DLC film and its tribologicul properties have been evaluated. The bull-on-disc testing results show that the hardness and the tribologicul properties of the DLC film produced by C^ + ion beam- assisted deposition are improved significantly. DLC film produced by C ^+ ion beam- assisted deposition is positive to have a prosperous tribologicul application in the near future.展开更多
This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperat...This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperature of 450 ℃ for more than three hours, the crystallinity of the deposited MgO films was improved, but the surface of the (200)-oriented MgO thin films in the vicinity of the discharge electrodes, especially on the inner sides of the electrodes, was subjected to crack formation to the compressive stress of The failure mechanism of the MgO films plus the additional (200)-oriented MgO films was due compressive stress induced by the differences in the coefficient of thermal expansion between the electrode and the dielectric layer. In the discharging process, all MgO films were eroded unevenly, and the serious erosion occurred near the edges of the discharge electrodes. ATM(atomic force microscopy) images show that the eroded surface of the (200)-oriented MgO thin film is smoother than that of the (111)-oriented fihn. Also, the (200)-oriented MgO thin film shows an improved ability to resist ion erosion compared to the (111)-oriented film.展开更多
The Ni80Nb20 films were prepared by ion beam assisted deposition (IBAD) with various Ar+ ion energies. A phase evolution of fcc→amorphous→Ni+Nb→Ni+hcp was observed with the increasing of ion beam energy from 2 keV ...The Ni80Nb20 films were prepared by ion beam assisted deposition (IBAD) with various Ar+ ion energies. A phase evolution of fcc→amorphous→Ni+Nb→Ni+hcp was observed with the increasing of ion beam energy from 2 keV to 8 keV. When bombarded by Ar+ ions of 8 keV during deposition, a new crystalline phase with hcp structure was obtained, of which the lattice parameters are a=0.286 nm and c=0.483 nm, different from those of the similar A3B-type hcp phase previously reported. The experimental results were discussed in terms of thermodynamics and restricted kinetic conditions in the far-from-equilibrium process of IBAD. The formation of hep phase may also be related to the valence electron effect.展开更多
Self-assembled Ge nanodots with areal number density up to 2.33× 1010 cm-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge c...Self-assembled Ge nanodots with areal number density up to 2.33× 1010 cm-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional precursors to three-dimensional islands, and to be associated with the adatom behaviors of attachment and detachment from the islands. An unusual increasing temperature dependence of nanodot density is also revealed when a high ion energy is employed in sputtering deposition, and is shown to be related to the breaking down of the superstrained wetting layer. This result is attributed to the interaction between energetic atoms and the growth surface, which mediates the island nucleation.展开更多
Li-N dual-doped ZnO films [ZnO:(Li,N)] with Li doping concentrations of 3 at.%-5 at.% were grown on a glass substrate using an ion beam enhanced deposition (IBED) method. An optimal p-type ZnO:(Li,N) film with...Li-N dual-doped ZnO films [ZnO:(Li,N)] with Li doping concentrations of 3 at.%-5 at.% were grown on a glass substrate using an ion beam enhanced deposition (IBED) method. An optimal p-type ZnO:(Li,N) film with the resistivity of 11.4 Ω·cm was obtained by doping 4 at.% of Li and 5 sccm flow ratio of N2. The ZnO:(Li,N) films-exhibited a wurtzite structure and good transmittance in the visible region. The p-type conductive mechanism of ZnO:(Li,N) films are attributed to the Li substitute Zn site (Lizn) acceptor. N doping in ZnO can forms the Lii-No complex, which depresses the compensation of Li occupy interstitial site (Lii) donors for Lizn acceptor and helps to achieve p-type ZnO:(Li,N) films. Room temperature photoluminescence measurements indicate that the UV peak (381 nm) is due to the shallow acceptors Lizn in the p-type ZnO:(Li,N) films. The band gap of the ZnO:(Li,N) films has a red-shift after p-type doping.展开更多
Diamond like carbon films have been successfully deposited on the steel substrate, by using a single ion gun with varying beam source. The films may appear blue, yellow and transparent in color, which was found relate...Diamond like carbon films have been successfully deposited on the steel substrate, by using a single ion gun with varying beam source. The films may appear blue, yellow and transparent in color, which was found related to contaminants from the sample holder and could be avoided. The thickness of the films ranges from tens up to 200 nanometers, and the hardness is in the range 20 to 30 GPa. Raman analytical results reveal the films are in amorphous structure. The effects of different beam source on the films structure are further discussed.展开更多
A new method for preparation of hard TiN films has been developed by using electron beam evaporation-deposition of Ti and bombardment with 40 keV Xe^+ ion beam in a N_2 gas environment.The synthesized TiN films were s...A new method for preparation of hard TiN films has been developed by using electron beam evaporation-deposition of Ti and bombardment with 40 keV Xe^+ ion beam in a N_2 gas environment.The synthesized TiN films were superior to PVD and CVD ones in respects of improved adhesion to substrate and low preparing temperature.They exhibited good wear resistance and high hardness up to 2200 kg/mm^2.Some industrial applications have been reported.展开更多
Copper ion implantation and deposition technique was applied as a pretreatment method for low temperature joining of silica ceramic ( SiO2 ) and copper alloy. The effect of copper ion implantation and deposition par...Copper ion implantation and deposition technique was applied as a pretreatment method for low temperature joining of silica ceramic ( SiO2 ) and copper alloy. The effect of copper ion implantation and deposition parameters on the microstructures and mechanical behavior of the soldering joints was investigated by scanning electron microscope (SEM) , X- ray diffraction ( XRD ) and shearing test. The copper implantation depth was about 90 nm with peak concentration of 70% for the SiO2 sample implanted for 90 rain. If copper film was deposited for 4 rain using magnetron sputtering, copper layer with thickness of 150 nm and peak concentration of 80% was obtained. After pretreatment of ion implantation and deposition, SiO2 and copper were joined successfully at low temperature directly using SnPb solder. The SnPb solder filling ratio along joining seams was up to 100% without defects with smooth soldering toes. With the increase of implantation dose, the shear strength of the Si02/Cu joints increases accordingly. After a special pretreatment on SiO2 ( Cu implantation for 30min, following Cu deposition for 4 rain, then Cu implantation for 60 rain and finally Cu deposition for 120 min) , a maximum soldering strength of 22 MPa was achieved, and the soldering joints fractured at the SiO2 base material.展开更多
With the development of industry, much attention has been paid to lengthening the life span of bearings. As reported in this paper, we investigated the Cr/CrN compound films formed on the specimens of W9Cr4V2Mo bearin...With the development of industry, much attention has been paid to lengthening the life span of bearings. As reported in this paper, we investigated the Cr/CrN compound films formed on the specimens of W9Cr4V2Mo bearing steel by ion beam assisted deposition for improving the performance of bearing steels. The Vicker's microhardness, pin-on-disc, electrochemical measurement, XRD and SEM tests were used to characterize and analyze the treated samples. All results indicated that the mechanical properties of the treated samples were good, with the microhardness greater than that of the uncoated specimen, and the wear resistance, the passivity and pitting corrosion resistance increased considerably, the films possessed alternate Cr and CrN compound phases and produced different effects on the improvement of the performance of W9Cr4V2Mo bearing steels with different composing phases.展开更多
BN films,synthesized by ion beam assisted deposition,were analysed by RBS,AES, IR spectra and TEM.Formatiom of c-BN phase was shown not only by IR spectra at absorption peak of 1100 cm^(-1),but also by electron diffra...BN films,synthesized by ion beam assisted deposition,were analysed by RBS,AES, IR spectra and TEM.Formatiom of c-BN phase was shown not only by IR spectra at absorption peak of 1100 cm^(-1),but also by electron diffraction pattern.The results of AES demonstrate an effect of N^+ implantation near the film surface.The deposited films consist of three layers,i.e.,ion implantation layer,film layer and mixed intermediatelayer, according to the difference of concentration.The micro-Knoop hardness of the film is 25—35 GPa.展开更多
The TiN films were synthesized with an alternate process of depositing titanium from a E-gun evaporation source and 40 keV N^+ bombarding onto the target.It is shown from the composi- tion analysis and structure inves...The TiN films were synthesized with an alternate process of depositing titanium from a E-gun evaporation source and 40 keV N^+ bombarding onto the target.It is shown from the composi- tion analysis and structure investigations using RBS,AES,TEM,XPS and X-ray diffraction spectrum that the formed fihns are mainly composed of TiN phase with grain size of 30—40 nm and without preferred orientation,the nitrogen content in the film is much less than that in case without N^+ bombarding,and an intermixed region about 40 nm thick exists between the film and the substrate.The films exhibt high microhardness and low friction. ZHOU Jiankun,Ion Beam Laboratory,Shanghai Institute of Metallurgy,Academia Sinica, Shanghai 200050,China展开更多
In this paper, blood compatibility of carbonnitride film synthesized by ion beam enhanced deposition is studied. Clotting time measurement, platelet adhesion test and surface energy determination were performed to eva...In this paper, blood compatibility of carbonnitride film synthesized by ion beam enhanced deposition is studied. Clotting time measurement, platelet adhesion test and surface energy determination were performed to evaluate the interaction between blood and material. The results show that carbonnitride film has better blood compatibility than titanium, and may be promising in biomaterial filed.展开更多
Diamond-like carbon (DLC) films were synthesized by plasma immersion ion implantation and deposition (PIIID) on 9Cr18 bearing steel surface. Influences of working gas pressure and pulse width of the bias voltage on pr...Diamond-like carbon (DLC) films were synthesized by plasma immersion ion implantation and deposition (PIIID) on 9Cr18 bearing steel surface. Influences of working gas pressure and pulse width of the bias voltage on properties of the thin film were investigated. The chemical compositions of the as-deposited films were characterized by Raman spectroscopy. The micro-hardness, friction and wear behavior, corrosion resistance of the samples were evaluated, respectively. Compared with uncoated substrates, micro-hardness results reveal that the maximum is increased by 88.7%. In addition, the friction coefficient decreases to about 0.1, and the corrosion resistance of treated coupons surface are improved significantly.展开更多
Carbyne-enriched nanomaterials are of current interest in nanotechnology-related applications.The properties of these nanomaterials greatly depend on their production process.In particular,structural self-organization...Carbyne-enriched nanomaterials are of current interest in nanotechnology-related applications.The properties of these nanomaterials greatly depend on their production process.In particular,structural self-organization and auto-synchronization of nanostructures are typical phenomena observed during the growth and heteroatom-doping of carbyne-enriched nanostructured metamaterials by the ion-assisted pulse-plasma deposition method.Accordingly,fine tuning of these processes may be seen as the key step to the predictive designing of carbyneenriched nano-matrices with improved properties.In particular,we propose an innovative concept,connected with application of the vibrational-acoustic effects and based on universal Cymatics mechanisms.These effects are used to induce vibration-assisted self-organized wave patterns together with the simultaneous manipulation of their properties through an electric field.Interaction between the inhomogeneous electric field distribution generated on the vibrating layer and the plasma ions serves as the additional energizing factor controlling the local pattern formation and self-organization of the nano-structures.展开更多
The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of ...The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of High-Energy Electron Diffraction (RHEED), Scanning Electron Microscopy (SEM) and Quantum Design Physical Properties Measurement System, the behaviour of hexagonal GaN thin films is investigated. The result showed that the high quality of the deposited GaN layers kept appearing for many parameters depending on the temperature greatly. The behaviour of high quality of epitaxial GaN coating on the polyimide polymer substrates is a promising material for optoelectronic devices and semiconductor devices application.展开更多
基金This work was supported by 863 High Science & Technology Committee(2001AA38020) The National Natural Science Foundation of
文摘Mo silicides Mo_5Si_3 with high quality were prepared using ion beamdeposition equipment with two Filter Metal Vacuum Are Deposition (FMEVAD). When the number ofalternant deposition times was 198, total thickness of the coating is 40nm. The coatings withdroplet free can be readily obtained, so the surface is smooth. TEM observation shows that Mo and Sialternant deposition coating is compact structure. The fine Mo silicide grains densely distributedin the coating. The coating adherence on silicon is excellent.
基金supported by the National Eleventh Five-Year Pre-research Project of China (No.51302060203)
文摘Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (IAD) at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in (400), (440) directions.
基金This work was supported in part by National Naturul Science Foundation of China(No.19875027)the Ministry of Science and Technology of China(No.G20000672071)by the Administration of Tsinghua University.
文摘The Cu25 Nb75 and Ni45Nb55 amorphous films with about 500nm thickness were prepared by ion beam assisted deposition (IBAD). Potentiodynamic polarization measurement was adopted to investigate the corrosion resistance of samples and the tests were carried out respectively in 1mol/L H2SO4 and NaOH aquatic solution. The corrosion performance of the amorphous films was compared with that of multilayered and pure Nb films. Experimental results indicated that the corrosion resistance of amorphous films was better than that of the corresponding multilayers and pure Nb films for both Ni-Nb system with negative heat of formation and Cu-Nb system with positive heat of formation.
基金This work was supported in part by the National Natural Science Foundation of China(Grant No.19875027)the Ministry of Scienc
文摘Ion beam assisted deposition technique (IBAD) was utilized to systematically study amorphization in binary metal systems of Nb-magnetic element, i.e., Nb-M (M=Fe, Co or Ni). The glass forming range termed as Nb fraction of Nb-Fe system was about 34at.% to 56at.%, that of Nb-Co system was about 32at.% to 72at.% and that of Nb-Ni about 20at. % to 80at. %. Similar percolation patterns were found in amorphous alloy films. The fractal dimensions of the percolation patterns approach to 2, which indicates 2-D layer growth for amorphous phases. It is regarded that the assisted Ar+ ion beam during the deposition process plays important role for the 2-D layer growth. Some metastable crystalline phases were obtained in these three systems by IBAD, e.g., bcc supersaturated solid solutions in Nb-Fe and Nb-Co systems, fcc and hcp phases in Nb-Co and Nb-Ni systems. The formation and competing between the amorphous and the metastable crystalline phases were determined by both the phases' thermodynamic states in binary metal systems and kinetics during IBAD process.
基金Supported by the Fund of National Key Laboratory of High Power Microwave Technology under Grant No 2014-763.xy.kthe National Natural Science Foundation of China under Grant No 21573054the Joint Funds Key Project of the National Natural Science Foundation of China under Grant No U1537214
文摘A Ti-BN complex cathode is made from Ti and h-BN powders by the powder metallurgy technology, and TiBN coating is obtained by plasma immersion ion implantation and deposition with this Ti-BN composite cathode. The TiBN coating shows a self-forming multilayered nanocomposite structure while with relative uniform elemental distributions. High resolution transmission electron microscopy images reveal that the multilayered structure is derived from different grain sizes in the nanocomposite. Due to the existence of h-BN phase, the friction coefficient of the coating is about 0.25.
基金Funded by the National Natural Science Foundation of China(No.50175041 ,50275111)
文摘C ^+ ion beam-assisted deposition was utilized to prepare deposit diamond-like carbon ( DLC ) film. With the help of a series of experiments such as Raman spectroscopy, FT-IR spectroscopy, AFM and nanoindentation , the DLC film has been recognized as hydrogenated DLC film and its tribologicul properties have been evaluated. The bull-on-disc testing results show that the hardness and the tribologicul properties of the DLC film produced by C^ + ion beam- assisted deposition are improved significantly. DLC film produced by C ^+ ion beam- assisted deposition is positive to have a prosperous tribologicul application in the near future.
文摘This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperature of 450 ℃ for more than three hours, the crystallinity of the deposited MgO films was improved, but the surface of the (200)-oriented MgO thin films in the vicinity of the discharge electrodes, especially on the inner sides of the electrodes, was subjected to crack formation to the compressive stress of The failure mechanism of the MgO films plus the additional (200)-oriented MgO films was due compressive stress induced by the differences in the coefficient of thermal expansion between the electrode and the dielectric layer. In the discharging process, all MgO films were eroded unevenly, and the serious erosion occurred near the edges of the discharge electrodes. ATM(atomic force microscopy) images show that the eroded surface of the (200)-oriented MgO thin film is smoother than that of the (111)-oriented fihn. Also, the (200)-oriented MgO thin film shows an improved ability to resist ion erosion compared to the (111)-oriented film.
基金The work was supported in part by the National Natural Sci ence Foundation of China(No.19875027)The Ministry of Science and Technology of China(No.G200067207-1),by the Adninistration of Tsinghua University.
文摘The Ni80Nb20 films were prepared by ion beam assisted deposition (IBAD) with various Ar+ ion energies. A phase evolution of fcc→amorphous→Ni+Nb→Ni+hcp was observed with the increasing of ion beam energy from 2 keV to 8 keV. When bombarded by Ar+ ions of 8 keV during deposition, a new crystalline phase with hcp structure was obtained, of which the lattice parameters are a=0.286 nm and c=0.483 nm, different from those of the similar A3B-type hcp phase previously reported. The experimental results were discussed in terms of thermodynamics and restricted kinetic conditions in the far-from-equilibrium process of IBAD. The formation of hep phase may also be related to the valence electron effect.
基金Project supported by the Joint Fund of National Natural Science Foundation of China and Yunnan Province, China (Grant No. U1037604)the Applied Basic Research Foundations of Yunnan Province, China (Grant No. 2009CD003)the Scientific Research Foundation of Yunnan University, China (Grant No. 2009E28Q)
文摘Self-assembled Ge nanodots with areal number density up to 2.33× 1010 cm-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional precursors to three-dimensional islands, and to be associated with the adatom behaviors of attachment and detachment from the islands. An unusual increasing temperature dependence of nanodot density is also revealed when a high ion energy is employed in sputtering deposition, and is shown to be related to the breaking down of the superstrained wetting layer. This result is attributed to the interaction between energetic atoms and the growth surface, which mediates the island nucleation.
文摘Li-N dual-doped ZnO films [ZnO:(Li,N)] with Li doping concentrations of 3 at.%-5 at.% were grown on a glass substrate using an ion beam enhanced deposition (IBED) method. An optimal p-type ZnO:(Li,N) film with the resistivity of 11.4 Ω·cm was obtained by doping 4 at.% of Li and 5 sccm flow ratio of N2. The ZnO:(Li,N) films-exhibited a wurtzite structure and good transmittance in the visible region. The p-type conductive mechanism of ZnO:(Li,N) films are attributed to the Li substitute Zn site (Lizn) acceptor. N doping in ZnO can forms the Lii-No complex, which depresses the compensation of Li occupy interstitial site (Lii) donors for Lizn acceptor and helps to achieve p-type ZnO:(Li,N) films. Room temperature photoluminescence measurements indicate that the UV peak (381 nm) is due to the shallow acceptors Lizn in the p-type ZnO:(Li,N) films. The band gap of the ZnO:(Li,N) films has a red-shift after p-type doping.
文摘Diamond like carbon films have been successfully deposited on the steel substrate, by using a single ion gun with varying beam source. The films may appear blue, yellow and transparent in color, which was found related to contaminants from the sample holder and could be avoided. The thickness of the films ranges from tens up to 200 nanometers, and the hardness is in the range 20 to 30 GPa. Raman analytical results reveal the films are in amorphous structure. The effects of different beam source on the films structure are further discussed.
文摘A new method for preparation of hard TiN films has been developed by using electron beam evaporation-deposition of Ti and bombardment with 40 keV Xe^+ ion beam in a N_2 gas environment.The synthesized TiN films were superior to PVD and CVD ones in respects of improved adhesion to substrate and low preparing temperature.They exhibited good wear resistance and high hardness up to 2200 kg/mm^2.Some industrial applications have been reported.
文摘Copper ion implantation and deposition technique was applied as a pretreatment method for low temperature joining of silica ceramic ( SiO2 ) and copper alloy. The effect of copper ion implantation and deposition parameters on the microstructures and mechanical behavior of the soldering joints was investigated by scanning electron microscope (SEM) , X- ray diffraction ( XRD ) and shearing test. The copper implantation depth was about 90 nm with peak concentration of 70% for the SiO2 sample implanted for 90 rain. If copper film was deposited for 4 rain using magnetron sputtering, copper layer with thickness of 150 nm and peak concentration of 80% was obtained. After pretreatment of ion implantation and deposition, SiO2 and copper were joined successfully at low temperature directly using SnPb solder. The SnPb solder filling ratio along joining seams was up to 100% without defects with smooth soldering toes. With the increase of implantation dose, the shear strength of the Si02/Cu joints increases accordingly. After a special pretreatment on SiO2 ( Cu implantation for 30min, following Cu deposition for 4 rain, then Cu implantation for 60 rain and finally Cu deposition for 120 min) , a maximum soldering strength of 22 MPa was achieved, and the soldering joints fractured at the SiO2 base material.
基金The project supported by National Natural Science Foundation of China (No. 90205001)
文摘With the development of industry, much attention has been paid to lengthening the life span of bearings. As reported in this paper, we investigated the Cr/CrN compound films formed on the specimens of W9Cr4V2Mo bearing steel by ion beam assisted deposition for improving the performance of bearing steels. The Vicker's microhardness, pin-on-disc, electrochemical measurement, XRD and SEM tests were used to characterize and analyze the treated samples. All results indicated that the mechanical properties of the treated samples were good, with the microhardness greater than that of the uncoated specimen, and the wear resistance, the passivity and pitting corrosion resistance increased considerably, the films possessed alternate Cr and CrN compound phases and produced different effects on the improvement of the performance of W9Cr4V2Mo bearing steels with different composing phases.
文摘BN films,synthesized by ion beam assisted deposition,were analysed by RBS,AES, IR spectra and TEM.Formatiom of c-BN phase was shown not only by IR spectra at absorption peak of 1100 cm^(-1),but also by electron diffraction pattern.The results of AES demonstrate an effect of N^+ implantation near the film surface.The deposited films consist of three layers,i.e.,ion implantation layer,film layer and mixed intermediatelayer, according to the difference of concentration.The micro-Knoop hardness of the film is 25—35 GPa.
文摘The TiN films were synthesized with an alternate process of depositing titanium from a E-gun evaporation source and 40 keV N^+ bombarding onto the target.It is shown from the composi- tion analysis and structure investigations using RBS,AES,TEM,XPS and X-ray diffraction spectrum that the formed fihns are mainly composed of TiN phase with grain size of 30—40 nm and without preferred orientation,the nitrogen content in the film is much less than that in case without N^+ bombarding,and an intermixed region about 40 nm thick exists between the film and the substrate.The films exhibt high microhardness and low friction. ZHOU Jiankun,Ion Beam Laboratory,Shanghai Institute of Metallurgy,Academia Sinica, Shanghai 200050,China
文摘In this paper, blood compatibility of carbonnitride film synthesized by ion beam enhanced deposition is studied. Clotting time measurement, platelet adhesion test and surface energy determination were performed to evaluate the interaction between blood and material. The results show that carbonnitride film has better blood compatibility than titanium, and may be promising in biomaterial filed.
文摘Diamond-like carbon (DLC) films were synthesized by plasma immersion ion implantation and deposition (PIIID) on 9Cr18 bearing steel surface. Influences of working gas pressure and pulse width of the bias voltage on properties of the thin film were investigated. The chemical compositions of the as-deposited films were characterized by Raman spectroscopy. The micro-hardness, friction and wear behavior, corrosion resistance of the samples were evaluated, respectively. Compared with uncoated substrates, micro-hardness results reveal that the maximum is increased by 88.7%. In addition, the friction coefficient decreases to about 0.1, and the corrosion resistance of treated coupons surface are improved significantly.
基金This research work is jointly supported and funded by the Scientific and Technological Research Council of Turkey(TÜBİTAK)the Russian Foundation for Basic Research(RFBR)according to the Research Project No.20-58-46014.
文摘Carbyne-enriched nanomaterials are of current interest in nanotechnology-related applications.The properties of these nanomaterials greatly depend on their production process.In particular,structural self-organization and auto-synchronization of nanostructures are typical phenomena observed during the growth and heteroatom-doping of carbyne-enriched nanostructured metamaterials by the ion-assisted pulse-plasma deposition method.Accordingly,fine tuning of these processes may be seen as the key step to the predictive designing of carbyneenriched nano-matrices with improved properties.In particular,we propose an innovative concept,connected with application of the vibrational-acoustic effects and based on universal Cymatics mechanisms.These effects are used to induce vibration-assisted self-organized wave patterns together with the simultaneous manipulation of their properties through an electric field.Interaction between the inhomogeneous electric field distribution generated on the vibrating layer and the plasma ions serves as the additional energizing factor controlling the local pattern formation and self-organization of the nano-structures.
文摘The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of High-Energy Electron Diffraction (RHEED), Scanning Electron Microscopy (SEM) and Quantum Design Physical Properties Measurement System, the behaviour of hexagonal GaN thin films is investigated. The result showed that the high quality of the deposited GaN layers kept appearing for many parameters depending on the temperature greatly. The behaviour of high quality of epitaxial GaN coating on the polyimide polymer substrates is a promising material for optoelectronic devices and semiconductor devices application.