A Ti-BN complex cathode is made from Ti and h-BN powders by the powder metallurgy technology, and TiBN coating is obtained by plasma immersion ion implantation and deposition with this Ti-BN composite cathode. The TiB...A Ti-BN complex cathode is made from Ti and h-BN powders by the powder metallurgy technology, and TiBN coating is obtained by plasma immersion ion implantation and deposition with this Ti-BN composite cathode. The TiBN coating shows a self-forming multilayered nanocomposite structure while with relative uniform elemental distributions. High resolution transmission electron microscopy images reveal that the multilayered structure is derived from different grain sizes in the nanocomposite. Due to the existence of h-BN phase, the friction coefficient of the coating is about 0.25.展开更多
Copper ion implantation and deposition technique was applied as a pretreatment method for low temperature joining of silica ceramic （ SiO2 ） and copper alloy. The effect of copper ion implantation and deposition par...Copper ion implantation and deposition technique was applied as a pretreatment method for low temperature joining of silica ceramic （ SiO2 ） and copper alloy. The effect of copper ion implantation and deposition parameters on the microstructures and mechanical behavior of the soldering joints was investigated by scanning electron microscope （SEM） , X- ray diffraction （ XRD ） and shearing test. The copper implantation depth was about 90 nm with peak concentration of 70% for the SiO2 sample implanted for 90 rain. If copper film was deposited for 4 rain using magnetron sputtering, copper layer with thickness of 150 nm and peak concentration of 80% was obtained. After pretreatment of ion implantation and deposition, SiO2 and copper were joined successfully at low temperature directly using SnPb solder. The SnPb solder filling ratio along joining seams was up to 100% without defects with smooth soldering toes. With the increase of implantation dose, the shear strength of the Si02/Cu joints increases accordingly. After a special pretreatment on SiO2 （ Cu implantation for 30min, following Cu deposition for 4 rain, then Cu implantation for 60 rain and finally Cu deposition for 120 min） , a maximum soldering strength of 22 MPa was achieved, and the soldering joints fractured at the SiO2 base material.展开更多
基金Supported by the Fund of National Key Laboratory of High Power Microwave Technology under Grant No 2014-763.xy.kthe National Natural Science Foundation of China under Grant No 21573054the Joint Funds Key Project of the National Natural Science Foundation of China under Grant No U1537214
文摘A Ti-BN complex cathode is made from Ti and h-BN powders by the powder metallurgy technology, and TiBN coating is obtained by plasma immersion ion implantation and deposition with this Ti-BN composite cathode. The TiBN coating shows a self-forming multilayered nanocomposite structure while with relative uniform elemental distributions. High resolution transmission electron microscopy images reveal that the multilayered structure is derived from different grain sizes in the nanocomposite. Due to the existence of h-BN phase, the friction coefficient of the coating is about 0.25.
文摘Copper ion implantation and deposition technique was applied as a pretreatment method for low temperature joining of silica ceramic （ SiO2 ） and copper alloy. The effect of copper ion implantation and deposition parameters on the microstructures and mechanical behavior of the soldering joints was investigated by scanning electron microscope （SEM） , X- ray diffraction （ XRD ） and shearing test. The copper implantation depth was about 90 nm with peak concentration of 70% for the SiO2 sample implanted for 90 rain. If copper film was deposited for 4 rain using magnetron sputtering, copper layer with thickness of 150 nm and peak concentration of 80% was obtained. After pretreatment of ion implantation and deposition, SiO2 and copper were joined successfully at low temperature directly using SnPb solder. The SnPb solder filling ratio along joining seams was up to 100% without defects with smooth soldering toes. With the increase of implantation dose, the shear strength of the Si02/Cu joints increases accordingly. After a special pretreatment on SiO2 （ Cu implantation for 30min, following Cu deposition for 4 rain, then Cu implantation for 60 rain and finally Cu deposition for 120 min） , a maximum soldering strength of 22 MPa was achieved, and the soldering joints fractured at the SiO2 base material.
