Photoluminescence （PL） spectra of Si nanocrystals （NCs） prepared by 130 keV Si ions implantation onto SiO2 matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist...Photoluminescence （PL） spectra of Si nanocrystals （NCs） prepared by 130 keV Si ions implantation onto SiO2 matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist of two PL peaks, originated from smaller Si NCs due to quantum confinement effect （QCE） and the interface states located at the surface of larger Si NCs. The evolution of number of dangling bonds （DBs） on Si NCs was also investigated. For bydrogen-passivated samples, a monotonic increase in PL peak intensity with the dose of implanted Si ions up to 3× 10^17 ions/cm^2 is observed. The number of DBs on individual Si NC, the interaction between DBs at the surface of neighbouring Si NCs and their effects on the efficiency of PL are discussed.展开更多
Photoluminescence （PL） intensity of passivated silicon nanocrystals （Si NCs） embedded in a SiO2 matrix is com- pared with that of unpassivated Si NCs. We investigate the relative enhancement of PL intensity （IR）...Photoluminescence （PL） intensity of passivated silicon nanocrystals （Si NCs） embedded in a SiO2 matrix is com- pared with that of unpassivated Si NCs. We investigate the relative enhancement of PL intensity （IR） as a function of annealing temperature and implanted Si ion dose. The IR increases simultaneously with the annealing temperature. This demonstrates an increase in the number of dangling bonds （DBs） with the degree of Si crystallization varying via the annealing temperature. The increase in IR with implanted Si ion dose is also observed. We believe that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs.展开更多
文摘Photoluminescence （PL） spectra of Si nanocrystals （NCs） prepared by 130 keV Si ions implantation onto SiO2 matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist of two PL peaks, originated from smaller Si NCs due to quantum confinement effect （QCE） and the interface states located at the surface of larger Si NCs. The evolution of number of dangling bonds （DBs） on Si NCs was also investigated. For bydrogen-passivated samples, a monotonic increase in PL peak intensity with the dose of implanted Si ions up to 3× 10^17 ions/cm^2 is observed. The number of DBs on individual Si NC, the interaction between DBs at the surface of neighbouring Si NCs and their effects on the efficiency of PL are discussed.
基金Project supported by the State Key Laboratory of Nuclear Physics and Technology, China
文摘Photoluminescence （PL） intensity of passivated silicon nanocrystals （Si NCs） embedded in a SiO2 matrix is com- pared with that of unpassivated Si NCs. We investigate the relative enhancement of PL intensity （IR） as a function of annealing temperature and implanted Si ion dose. The IR increases simultaneously with the annealing temperature. This demonstrates an increase in the number of dangling bonds （DBs） with the degree of Si crystallization varying via the annealing temperature. The increase in IR with implanted Si ion dose is also observed. We believe that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs.
