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Experimental studies of superhard materials carbon nitride CNx prepared by ion-beam synthesis method
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作者 辛火平 林成鲁 +5 位作者 许华平 邹世昌 石晓红 吴兴龙 朱宏 P.L.FHemment 《Science China(Technological Sciences)》 SCIE EI CAS 1996年第4期404-411,共8页
Formation of superhard materials carbon nitride CNt by using ion-beam synthesis method is reported.100-keV high-dose N+ ions were implanted into carbon thin films at different temperatures.The samples were evaluated b... Formation of superhard materials carbon nitride CNt by using ion-beam synthesis method is reported.100-keV high-dose N+ ions were implanted into carbon thin films at different temperatures.The samples were evaluated by X-ray photoelectron spectroscopy (XPS),Fourier transformation-infrared absorption spectroscopy (FTIR),Raman spectroscopy,cross-sectional transmission electron microscopy (XTEM),Rutherford backscattering spectroscopy (RBS).X-ray diffraction analysis (XRD) and Vickers microhardness measurement.The results show that the buried carbon nitride CN> layer has been successfully formed by using 100-keV high-dose N+ ions implantation into carbon thin film.Implantation of reactive ions into silicon (IRIS) computer program has been used to simulate the formation of the buried β-C3N4 layer as N+ ions are implanted into carbon.A good agreement between experimental measurements and IRIS simulation is found. 展开更多
关键词 ion implantation c≡n covalent bond buried carbon nitride cnx
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