We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT p...We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.展开更多
We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then ...We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.展开更多
The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Al...The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Although EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with time.We can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S hours.This study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium ion.The fabrication of the potassium ion sensor can be widely employed in medical detection.展开更多
The sodium ion is necessary in physiological function and an important element in blood of human body,because the concentration of the sodium ion in the blood directly affects the functions of some organs or pathologi...The sodium ion is necessary in physiological function and an important element in blood of human body,because the concentration of the sodium ion in the blood directly affects the functions of some organs or pathological feature,how to detect it is an important affair.In this paper,we measure the concentration of sodium ions by the extended gate field effect transistor (EGFET).We use three different substrates RuO_x/p-Si,ITO glass,SnO_2/ITO to fabricate EGFET,and we choose the optimum structure.The fabrication of device needed to use the entrapment method.展开更多
Ions Sensitive Field Effect Transistors (ISFETs) are becoming the platform sensors for important chemical and biomedical applications. However, the accuracy of ISFET output measurement is greatly affected by the prese...Ions Sensitive Field Effect Transistors (ISFETs) are becoming the platform sensors for important chemical and biomedical applications. However, the accuracy of ISFET output measurement is greatly affected by the presences of low-frequency noise, drift and slow response of the device. This requires more safety in measured results and the tools of analysis. In this paper, we present fundamental limits on the sensitivity of ISFETs micro-sensors, arising from intrinsic and extrinsic noise sources. We developed an algorithm in MATLAB in order to model the frequency analysis of the 1/f noise in ISFET sensor using Hooge theory. We have shown that the 1/f noise of the ISFETs sensors is due to both the electrochemical system (pH solution) and the MOS component (canal size, insulator thickness). The temperature effect on the ISFET noise and the signal conditioning are also performed.展开更多
3D perovskite materials are advancing rapidly in the field of photovoltaics and light-emitting diodes,but the development in field effect transistors(FETs)is limited due to their intrinsic ion migration.Ion migration ...3D perovskite materials are advancing rapidly in the field of photovoltaics and light-emitting diodes,but the development in field effect transistors(FETs)is limited due to their intrinsic ion migration.Ion migration in perovskite FETs can screen the electric field of the gate and affect its modulation,as well as influence the charge carriers transport,leading to non-ideal device characteristics and lower device stability.Here,we provide a concise review that explains the mechanism of ion migration,summarizes the strategies for suppressing ion migration,and concludes with a discussion of the future prospects for 3D perovskite FETs.展开更多
文摘We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.
文摘We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.
文摘The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Although EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with time.We can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S hours.This study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium ion.The fabrication of the potassium ion sensor can be widely employed in medical detection.
文摘The sodium ion is necessary in physiological function and an important element in blood of human body,because the concentration of the sodium ion in the blood directly affects the functions of some organs or pathological feature,how to detect it is an important affair.In this paper,we measure the concentration of sodium ions by the extended gate field effect transistor (EGFET).We use three different substrates RuO_x/p-Si,ITO glass,SnO_2/ITO to fabricate EGFET,and we choose the optimum structure.The fabrication of device needed to use the entrapment method.
文摘Ions Sensitive Field Effect Transistors (ISFETs) are becoming the platform sensors for important chemical and biomedical applications. However, the accuracy of ISFET output measurement is greatly affected by the presences of low-frequency noise, drift and slow response of the device. This requires more safety in measured results and the tools of analysis. In this paper, we present fundamental limits on the sensitivity of ISFETs micro-sensors, arising from intrinsic and extrinsic noise sources. We developed an algorithm in MATLAB in order to model the frequency analysis of the 1/f noise in ISFET sensor using Hooge theory. We have shown that the 1/f noise of the ISFETs sensors is due to both the electrochemical system (pH solution) and the MOS component (canal size, insulator thickness). The temperature effect on the ISFET noise and the signal conditioning are also performed.
基金supported by the National Natural Science Foundation of China (62374104)the Shan-dong Postdoctoral Innovation Program (SDCX-ZG-202301004,SDBX2023043)+3 种基金the Natural Science Foundation of Shandong (ZR2021QB093)the Jinan Central Hospital Collaboration (1190022050)the First Cohort of Talent Research Projects from Qilu University of Technology,Shandong Academy of Sciences in 2023 (2023RCKY199)the Pilot Project for Integrating Science,Education and Industry from Qilu University of Technology,Shandong Academy of Sciences (2023PX019).
文摘3D perovskite materials are advancing rapidly in the field of photovoltaics and light-emitting diodes,but the development in field effect transistors(FETs)is limited due to their intrinsic ion migration.Ion migration in perovskite FETs can screen the electric field of the gate and affect its modulation,as well as influence the charge carriers transport,leading to non-ideal device characteristics and lower device stability.Here,we provide a concise review that explains the mechanism of ion migration,summarizes the strategies for suppressing ion migration,and concludes with a discussion of the future prospects for 3D perovskite FETs.
