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Research on deposition rate of TiZrV/Pd film by DC magnetron sputtering method 被引量:1
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作者 Jie Wang Bo Zhang +1 位作者 Yan-Hui Xu Yong Wang 《Nuclear Science and Techniques》 SCIE CAS CSCD 2017年第4期44-50,共7页
An accelerator storage ring needs clean ultrahigh vacuum.A TiZrV non-evaporable getter(NEG) film deposited on interior walls of the chamber can realize distributed pumping,effective vacuum improvement and reduced long... An accelerator storage ring needs clean ultrahigh vacuum.A TiZrV non-evaporable getter(NEG) film deposited on interior walls of the chamber can realize distributed pumping,effective vacuum improvement and reduced longitudinal pressure gradient.But accumulation of pollutants such as N_2 and O_2 will decrease the adsorption ability of the NEG,leading to a reduction of NEG lifetime.Therefore,an NEG thin film coated with a layer of Pd,which has high diffusion rate and absorption ability for H_2,can extend the service life of NEG and improve the pumping rate of H_2 as well.In this paper,with argon as discharge gas,a magnetron sputtering method is adopted to prepare TiZrV-Pd films in a long straight pipe.By SEM measurement,deposition rates of TiZrV-Pd films are analyzed under different deposition parameters,such as magnetic field strength,gas flow rate,discharge current,discharge voltage and working pressure.By comparing the experimental results with the simulation results based on Sigmund's theory,the Pd deposition rate C can be estimated by the sputtered depth. 展开更多
关键词 TiZrV-Pd DEPOSITION rates MAGNETRON sputtering method Non-evaporable GETTER
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Effects of the ion-beam voltage on the properties of the diamond-like carbon thin film prepared by ion-beam sputtering deposition 被引量:1
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作者 孙鹏 胡明 +4 位作者 张锋 季一勤 刘华松 刘丹丹 冷健 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第6期581-585,共5页
Diamond-like carbon (DLC) thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prep... Diamond-like carbon (DLC) thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prepared by ion-beam sputtering deposition in Ar and CH4 mixtures with graphite as the target. The influences of the ion-beam voltage on the surface morphology, chemical structure, mechanical and infrared optical properties of the DLC films are investigated by atomic force microscopy (AFM), Raman spectroscopy, nanoindentation, and Fourier transform infrared (FTIR) spec- troscopy, respectively. The results show that the surface of the film is uniform and smooth. The film contains sp2 and sp3 hybridized carbon bondings. The film prepared by lower ion beam voltage has a higher sp3 bonding content. It is found that the hardness of DLC films increases with reducing ion-beam voltage, which can be attributed to an increase in the fraction of sp3 carbon bondings in the DLC film. The optical constants can be obtained by the whole infrared optical spectrum fitting with the transmittance spectrum. The refractive index increases with the decrease of the ion-beam voltage, while the extinction coefficient decreases. 展开更多
关键词 DLC thin film ion-beam sputtering deposition chemical bondings infrared optical and mechani-cal properties
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Characterization of La-doped xBiInO_3(1-x)PbTiO_3 Piezoelectric Films Deposited by the Radio-Frequency Magnetron Sputtering Method 被引量:1
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作者 孙科学 张淑仪 +1 位作者 Kiyotaka Wasa 水修基 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第6期49-52,共4页
La-doped and undoped xBiIn03-(1 - x)PbTi03 (BI-PT) thin films are deposited on (101)SrRuO3/(lOO)Pt/(lO0) MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by... La-doped and undoped xBiIn03-(1 - x)PbTi03 (BI-PT) thin films are deposited on (101)SrRuO3/(lOO)Pt/(lO0) MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by XRD and SEM, and the results indicate that the thin films are grown with mainly (100) oriented and columnar structures. The ferroelectricity and piezoelectricity of the BI-PT films are also measured, and the measured results illustrate that both performances are effectively improved by the La-doping with suitable concentrations. These results will open up wide potential applications of the films in electronic devices. 展开更多
关键词 of BI Characterization of La-doped xBiInO3 x)PbTiO3 Piezoelectric Films Deposited by the Radio-Frequency Magnetron sputtering method in by La PT
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High Ferroelectricities and High Curie Temperature of BiInO3PbTiO3Thin Films Deposited by RF Magnetron Sputtering Method
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作者 孙科学 张淑仪 Kiyotaka Wasa 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第12期19-22,共4页
Properties of ferroelectric xBiInO3-(1-x)PbTiO3(xBI-(1-x)PT) thin films deposited on(101) SrRuO3/(200)Pt/(200) MgO substrates by rf magnetron sputtering method and effects of deposition conditions are inve... Properties of ferroelectric xBiInO3-(1-x)PbTiO3(xBI-(1-x)PT) thin films deposited on(101) SrRuO3/(200)Pt/(200) MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated.The structures of the xBI-(1-x)PT films are characterized by x-ray diffraction and scanning electron microscopy.The results indicate that the thin films are grown with mainly(001) orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process.The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents,2 mol% La2 O3 is doped in the targets. The P-E hysteresis loops show that the optimized xBI-(1-x)PT(x = 0.24) film has high ferroelectricities with remnant polarization2 Pr = 80μC/cm2 and coercive electric field 2 EC = 300 kV/cm. The Curie temperature is about 640℃. The results show that the films have optimum performance and will have wide applications. 展开更多
关键词 In Pb MGO High Ferroelectricities and High Curie Temperature of BiInO3PbTiO3Thin Films Deposited by RF Magnetron sputtering method
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Effects of RF-Sputtering Method Based Oxygen Flow Rate Change on the Properties of ZrO2 Thin Film
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作者 Jin Jeong Kyung-Choul Baek Bong-Ju Lee 《材料科学与工程(中英文A版)》 2012年第3期341-345,共5页
关键词 ZRO2薄膜 射频溅射法 薄膜性能 氧气流量 汇率 薄膜生长 氧分压 氧气分压
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Sputtering Preparation and Magneto-optical Properties of GdTbFeCo Thin Films
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作者 黄致新 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2012年第2期195-198,共4页
Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target. The influences of sputtering parameters on the magneto- optical properties ... Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target. The influences of sputtering parameters on the magneto- optical properties GdTbFeCo thin film were investigated by the variable control method. And the influence mechanism was analyzed in detail. After the sputtering parameters were optimized, it was found that when the distance between target and substrate was 72 ram, the thin film thickness was 120 nm, and the sputtering power, sputtering pressure and sputtering time was 75 W, 0.5 Pa and 613 s, respectively, the coercivity with perpendicular anisotropy could be as high as 6735 Oe, and the squareness ratio of the hysteresis loop was almost equal to 1. 展开更多
关键词 influence magnetron sputtering parameters GdTbFeCo thin film magnetoopticalproperty variable control method
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Continuous compositional spread investigation of SiC-based thin films prepared by MW-ECR plasma enhanced magnetron co-sputtering
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作者 王行行 张丽艳 +1 位作者 陆文琪 徐军 《Plasma Science and Technology》 SCIE EI CAS CSCD 2020年第3期66-70,共5页
A kind of combinatorial material methodology,also known as continuous compositional spread method,was employed to investigate the relationship between the optical band gap and composition of SiC thin films.A wide rang... A kind of combinatorial material methodology,also known as continuous compositional spread method,was employed to investigate the relationship between the optical band gap and composition of SiC thin films.A wide range of SixCy thin films with different carbon contents have been successfully deposited in a single deposition by carefully arranging the sample position on the substrate holder.The films were characterized by surface profiler,x-ray photoelectron spectroscopy,ultraviolet-visible spectroscopy,fourier transform infrared spectroscopy and Raman spectroscopy.The carbon content y increases linearly from 0.28 to 0.72 while the sample position changed from 85 to 175 mm,the optical band gap changed between 1.27 and 1.99 eV,the maximum value corresponded to the stoichiometric SiC sample at the position of 130 mm,which has the highest Si?C bond density of 11.7×10^22 cm^-3.The C poor and C rich SixCy samples with y value less and larger than 0.5 were obtained while samples deviated from the position 130 mm,the optical band gap decreased with the Si?C bond density. 展开更多
关键词 CONTINUOUS compositional SPREAD method silicon CARBIDE optical band gap magnetron sputtering Raman and IR SPECTRA
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五氧化二钒薄膜材料制备方法研究进展
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作者 杜金晶 孙晔 +4 位作者 朱军 李倩 王斌 刘景田 孟晓荣 《材料导报》 EI CAS CSCD 北大核心 2024年第5期111-119,共9页
由于V^(5+)的饱和氧化态,五氧化二钒成为钒体系中最稳定的氧化物。作为功能材料,五氧化二钒薄膜在众多科学领域有着巨大的应用潜力,因而受到越来越多的关注。这主要归功于其特殊的层状结构、高能量密度、良好的化学和热稳定性以及优异... 由于V^(5+)的饱和氧化态,五氧化二钒成为钒体系中最稳定的氧化物。作为功能材料,五氧化二钒薄膜在众多科学领域有着巨大的应用潜力,因而受到越来越多的关注。这主要归功于其特殊的层状结构、高能量密度、良好的化学和热稳定性以及优异的光学和电学性能。五氧化二钒薄膜的制备方法很多,采用不同的实验方法在不同衬底上制备的五氧化二钒薄膜因化学成分和组织结构差异而造成其电学、光学性能也存在显著的差异。本文详细阐述了五氧化二钒薄膜现有的制备技术,并对五氧化二钒薄膜材料应用的发展趋势进行了展望,以期为五氧化二钒薄膜产业的发展提供参考。 展开更多
关键词 五氧化二钒薄膜 溶胶-凝胶法 溅射法 喷雾热解法
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磁控溅射法制备的硫化镉缓冲层的铜锌锡硫薄膜太阳电池性能
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作者 陈玉飞 廖华 +2 位作者 周志能 赵永刚 王书荣 《云南师范大学学报(自然科学版)》 2024年第2期18-21,共4页
利用磁控溅射法制备硫化镉薄膜,研究硫化镉薄膜作为缓冲层的铜锌锡硫薄膜太阳电池性能.进一步地,采用双功率溅射的方法,减轻溅射过程对吸收层的损伤,增加了铜锌锡硫薄膜太阳电池的开路电压和填充因子,提高了光电转换效率,最终获得了光... 利用磁控溅射法制备硫化镉薄膜,研究硫化镉薄膜作为缓冲层的铜锌锡硫薄膜太阳电池性能.进一步地,采用双功率溅射的方法,减轻溅射过程对吸收层的损伤,增加了铜锌锡硫薄膜太阳电池的开路电压和填充因子,提高了光电转换效率,最终获得了光电转换效率为7.0%的铜锌锡硫薄膜太阳电池. 展开更多
关键词 铜锌锡硫薄膜太阳电池 硫化镉缓冲层 磁控溅射法 双功率溅射
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碳化硅基器件碳膜保护层的制备与研究
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作者 孔令通 肖晓雨 +3 位作者 佘鹏程 黄也 龚俊 王建青 《电子工业专用设备》 2024年第2期27-32,67,共7页
碳膜沉积工艺是集成电路碳化硅器件制造过程中一道关键工艺,通过在碳化硅表面沉积碳膜,有效防止碳化硅器件在高温退火后的表面荒化,避免器件失效。通过磁控溅射法在碳化硅基底上制备碳膜,探索不同的参数对碳膜的影响,得到了表面光滑、... 碳膜沉积工艺是集成电路碳化硅器件制造过程中一道关键工艺,通过在碳化硅表面沉积碳膜,有效防止碳化硅器件在高温退火后的表面荒化,避免器件失效。通过磁控溅射法在碳化硅基底上制备碳膜,探索不同的参数对碳膜的影响,得到了表面光滑、均匀性小于2%的碳膜。通过表征,证实碳膜与碳化硅基底有很好的结合力,在实际生产中沉积的碳膜对碳化硅器件起到了保护作用,有效地保证了产品良率。 展开更多
关键词 碳化硅 集成电路 碳膜沉积工艺 磁控溅射法 物理气相沉积
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Studies on Ion-Beam Modified Hydrogen Evolution Electrodes
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作者 Zhang Ji-shuang Li Qin-lian Lu Yao-jiao and Yan Xi-yun (Department of Chemistry and Chemical Engineering, Hunan Univesity, Changsha, 410082) Hou Rang-kun (Deaprtment of Chemistiy , Henan Educational College, Zhengzhou, 450003 ) 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 1994年第2期68-71,共4页
he present paper focuses on the modifying effects of ion beam mixing, ion im-planting and ion sputtering on hydrogen evolution electrodes. It was discovered thatthe four types of electrodes possessed excellent catalyt... he present paper focuses on the modifying effects of ion beam mixing, ion im-planting and ion sputtering on hydrogen evolution electrodes. It was discovered thatthe four types of electrodes possessed excellent catalytic activity in acid or alkalinemedia and potential stability in long term electrolysis of water under high currentdensity. Their stability and applying life-span greatly surpass those of other elec-trodes activated by electrodepositing and other method. The effects of temperatureand roughness on function of electrodes were also examined. XPS and AES wereapplied to analyse the surface composition and bond states of the electrodes, andthe distribution of concentration varying with depth, and to explain the law of theexperiments . 展开更多
关键词 Implantating ion-beam Mixing Ion sputtering XPS Hydrogen Evo-lution Reaction
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Characterization of the arrangement feature of copper interconnects by Moir inversion method
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作者 Qinghua Wang Satoshi Kishimoto +2 位作者 Huimin Xie Kewei Xu Jianfeng Wang 《Theoretical & Applied Mechanics Letters》 2012年第2期37-40,共4页
This paper explores the planar arrangement feature of the copper interconnects in a view field of several millimeters by the focused ion-beam (FIB) Moire inversion method quantitatively. The curved FIB Moire pattern... This paper explores the planar arrangement feature of the copper interconnects in a view field of several millimeters by the focused ion-beam (FIB) Moire inversion method quantitatively. The curved FIB Moire patterns indicate that the copper interconnects are a series of curves with continuous variations instead of beelines. The control equation set of the copper interconnects central lines is attained through the Moire inversion method. This work can be extended to inspect the structural defects and provide a reliable support for the interconnects structure fabrication. 展开更多
关键词 copper interconnects arrangement Moire inversion method focused ion-beam
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外尔半金属Co_(3)Sn_(2)S_(2)薄膜的制备和电磁性质研究
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作者 李首翰 崔驰 +2 位作者 李威 杨燚 黄润生 《南京大学学报(自然科学版)》 CAS CSCD 北大核心 2023年第4期705-712,共8页
外尔半金属Co_(3)Sn_(2)S_(2)是一种新型的拓扑量子材料,具有独特的拓扑能带结构,被认为是一种非常有潜力的自旋电子材料,而制备电子器件的重要一步是该材料的薄膜化.采用磁控溅射方法分别在Si O_(2)(300 nm)/Si(100)和Al_(2)O_(3)(0001... 外尔半金属Co_(3)Sn_(2)S_(2)是一种新型的拓扑量子材料,具有独特的拓扑能带结构,被认为是一种非常有潜力的自旋电子材料,而制备电子器件的重要一步是该材料的薄膜化.采用磁控溅射方法分别在Si O_(2)(300 nm)/Si(100)和Al_(2)O_(3)(0001)衬底上生长Co_(3)Sn_(2)S_(2)薄膜.X射线衍射(XRD,X-ray Diffraction)显示Co_(3)Sn_(2)S_(2)薄膜的结构随厚度而变化.在不同衬底上,Co_(3)Sn_(2)S_(2)薄膜的生长情况也不同,较薄的Co_(3)Sn_(2)S_(2)(<200 nm)适合生长在Al_(2)O_(3)(0001)衬底上,而较厚的Co_(3)Sn_(2)S_(2)(~5μm)适合生长在Si O_(2)(300 nm)/Si(100)衬底上.Co_(3)Sn_(2)S_(2)纵向电阻率随着厚度的增加而增加,对导电起主要作用的表面层厚度保持在一定尺度内. 展开更多
关键词 外尔半金属 Co_(3)Sn_(2)S_(2) 磁控溅射法
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反应磁控溅射制备h-BN薄膜及其日盲紫外探测器
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作者 武成 朱昭捷 +3 位作者 李坚富 涂朝阳 吕佩文 王燕 《人工晶体学报》 CAS 北大核心 2023年第5期798-804,共7页
随着电子信息技术的飞速发展,具有更高抗干扰能力以及更高灵敏度的日盲紫外探测器引起了广泛关注。六方相氮化硼(h-BN)凭借其超宽带隙、高光吸收系数、高热导率及高击穿场强等优势成为日盲紫外探测器研究的热点材料。此外,h-BN良好的机... 随着电子信息技术的飞速发展,具有更高抗干扰能力以及更高灵敏度的日盲紫外探测器引起了广泛关注。六方相氮化硼(h-BN)凭借其超宽带隙、高光吸收系数、高热导率及高击穿场强等优势成为日盲紫外探测器研究的热点材料。此外,h-BN良好的机械强度和光学透明性使其兼具柔性探测器的潜力。然而室温条件下制备的h-BN薄膜常具有较多缺陷,极大程度上限制了其柔性探测器的发展。本文在室温条件下采用反应磁控溅射,以B为生长源,在蓝宝石和Si衬底上实现了较高质量h-BN薄膜的制备,并在此薄膜的基础上制备了高性能日盲紫外探测器。3 V电压下,其探测器拥有极低的暗电流(0.07 pA)、较高的响应度(1.37μA/W)和探测率(2.73×10^(10)Jones)。本文的研究结果证实了室温制备h-BN薄膜及其日盲紫外探测器的可行性,为实现可在室温下工作的h-BN探测器的应用提供了参考。 展开更多
关键词 h-BN薄膜 反应溅射法 室温 日盲紫外探测器 光电性能 响应度
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Tl-1223高温超导薄膜在蓝宝石单晶基片上的生长和性能研究 被引量:1
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作者 韩徐 金艳营 +5 位作者 曾立 岳宏卫 蒋艳玲 唐平英 黄国华 谢清连 《人工晶体学报》 CAS 北大核心 2023年第4期629-635,共7页
本文报道了采用射频磁控溅射法和快速升温烧结法在R面取向的蓝宝石单晶基片上生长CeO_(2)缓冲层和Tl-1223超导薄膜,研究了缓冲层生长情况和先驱膜后退火条件对超导薄膜结晶情况和超导特性的影响。AFM和XRD表征结果显示,蓝宝石基片经过... 本文报道了采用射频磁控溅射法和快速升温烧结法在R面取向的蓝宝石单晶基片上生长CeO_(2)缓冲层和Tl-1223超导薄膜,研究了缓冲层生长情况和先驱膜后退火条件对超导薄膜结晶情况和超导特性的影响。AFM和XRD表征结果显示,蓝宝石基片经过退火后其表面形成具有光滑平台的台阶结构,同时基片的晶体质量得到了改善;本文所制备的CeO_(2)缓冲层和Tl-1223超导薄膜具有较好的c轴生长取向,而且两者呈现良好的ab面内织构。SEM表征结果显示,生长良好的Tl-1223超导薄膜呈层状结构,表面光滑平整、结构致密。在液氮环境下,测得所制备Tl-1223超导薄膜的临界转变温度Tc约为111 K,临界电流密度Jc(77 K,0 T)约为1.3 MA/cm2。 展开更多
关键词 Tl-1223超导薄膜 快速升温烧结法 蓝宝石基片 CeO_(2)缓冲层 磁控溅射 临界转变温度
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自组装层修饰溅射氧化镍对刮涂制备的宽带隙钙钛矿太阳电池性能影响研究
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作者 李佳宁 葛欣 +5 位作者 黄子轩 刘振 王鹏阳 石标 赵颖 张晓丹 《人工晶体学报》 CAS 北大核心 2023年第8期1458-1466,共9页
氧化镍作为高效钙钛矿太阳电池中常用无机空穴传输层材料,具有良好的光学透过性及化学稳定性,并且还可以通过磁控溅射等方法进行大面积制备,且成本低廉。然而相比于有机空穴传输材料,氧化镍和钙钛矿界面处的能级失配、缺陷及不良化学反... 氧化镍作为高效钙钛矿太阳电池中常用无机空穴传输层材料,具有良好的光学透过性及化学稳定性,并且还可以通过磁控溅射等方法进行大面积制备,且成本低廉。然而相比于有机空穴传输材料,氧化镍和钙钛矿界面处的能级失配、缺陷及不良化学反应等限制了基于氧化镍空穴传输层的宽带隙钙钛矿太阳电池的性能。为解决这一问题,本文提出了采用(2-(9H-咔唑-9-基)乙基)膦酸((2-(9H-carbazol-9-yl)ethylphosphonic acid,2PACz)自组装层作为氧化镍/宽带隙钙钛矿界面修饰材料。该分子可以有效钝化氧化镍表面缺陷、调节上层钙钛矿的成膜及促进界面电荷传输,最终宽带隙钙钛矿太阳电池的光电转换效率由16.18%提升至18.42%。本工作为氧化镍空穴传输层在宽带隙钙钛矿太阳电池中的应用提供了一种可借鉴的策略。 展开更多
关键词 宽带隙钙钛矿太阳电池 空穴传输层 氧化镍 自组装层 磁控溅射 刮涂法
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射频磁控溅射法制备MoS_(2)薄膜的最佳工艺参数研究
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作者 张俊峰 孙再征 +4 位作者 孔腾飞 蔡根旺 李亚平 胡莎 樊志琴 《人工晶体学报》 CAS 北大核心 2023年第2期271-280,共10页
采用射频(RF)磁控溅射法在石英衬底上制备了MoS_(2)薄膜。通过正交试验研究了溅射时间、溅射温度、氩气流量和溅射功率对MoS_(2)薄膜结构的影响。通过XRD、Raman、XPS、EDS和SEM对MoS_(2)薄膜的结晶度、薄膜厚度和表面形貌进行分析,得... 采用射频(RF)磁控溅射法在石英衬底上制备了MoS_(2)薄膜。通过正交试验研究了溅射时间、溅射温度、氩气流量和溅射功率对MoS_(2)薄膜结构的影响。通过XRD、Raman、XPS、EDS和SEM对MoS_(2)薄膜的结晶度、薄膜厚度和表面形貌进行分析,得到了制备MoS_(2)薄膜的最佳工艺参数。发现溅射温度较高或较低结晶度都很差,在较低的溅射温度下样品的XRD衍射峰不明显。而当温度为250℃时,样品的XRD衍射峰较多,结晶度较好。根据正交试验法得出溅射温度对MoS_(2)的结晶效果起着至关重要的作用,其次是氩气流量。当溅射温度为250℃,氩气流量为6 mL/min,溅射时间为30 min,溅射功率为300 W或400 W时,MoS_(2)膜的结晶度较好。在这个条件下制备的膜较厚,但为以后的实验指明了方向。保持溅射温度、溅射功率和氩气流量不变,通过减少时间成功制备了厚度为58.9 nm的薄膜。 展开更多
关键词 MoS_(2)薄膜 射频磁控溅射 二维材料 正交试验法 工艺参数
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电磁屏蔽织物的研究进展
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作者 陈思魁 郭荣辉 《纺织科学与工程学报》 CAS 2023年第2期88-94,共7页
介绍了电磁污染的来源以及电磁污染造成的危害,通过分析电磁屏蔽的原理,根据不同的制备方法,将电磁屏蔽织物包括采用涂层法、原位聚合法、金属混纺、化学镀、磁控溅射法等制备而成。介绍了这些方法的原理及国内外研究现状,总结电磁屏蔽... 介绍了电磁污染的来源以及电磁污染造成的危害,通过分析电磁屏蔽的原理,根据不同的制备方法,将电磁屏蔽织物包括采用涂层法、原位聚合法、金属混纺、化学镀、磁控溅射法等制备而成。介绍了这些方法的原理及国内外研究现状,总结电磁屏蔽织物未来发展方向。 展开更多
关键词 电磁屏蔽织物 涂层法 原位聚合法 金属混纺 化学镀 磁控溅射法
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基于ITO/PET的氧化钨电致变色复合材料研究进展
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作者 安佳钰 孙冬兰 +3 位作者 窦广鹏 刘靖 霍政春 孔德茹 《化工新型材料》 CAS CSCD 北大核心 2023年第10期42-48,共7页
目前制备电致变色器件大多使用的是刚性基底,刚性基底存在厚度大、共型性差、机械强度低和成本高等不可忽视的问题,阻碍了电致变色技术及其商业化的发展。相比于刚性基底,柔性基底具有体积小、重量轻和可弯曲等优点。综合评述了铟锡氧化... 目前制备电致变色器件大多使用的是刚性基底,刚性基底存在厚度大、共型性差、机械强度低和成本高等不可忽视的问题,阻碍了电致变色技术及其商业化的发展。相比于刚性基底,柔性基底具有体积小、重量轻和可弯曲等优点。综合评述了铟锡氧化物/聚对苯二甲酸乙二醇酯(ITO/PET)在氧化钨电致变色薄膜中的最新研究进展,介绍了氧化钨/ITO/PET复合材料的制备方法和实际应用。最后,对目前存在的一些挑战进行了概括与讨论,并对柔性电致变色材料的发展进行了展望。 展开更多
关键词 电致变色 ITO/PET 磁控溅射 溶胶-凝胶法 化学气相沉积 水热法 喷雾热解法
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TiW/Ni/Au爆炸箔制备及性能研究
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作者 李思宇 董晓芬 +3 位作者 王云鹏 李帅 王端 王庆华 《兵工学报》 EI CAS CSCD 北大核心 2023年第12期3826-3835,共10页
爆炸箔起爆器因其高可靠性、高安全性而在各类战术武器中备受青睐,但其起爆需要较高的输入能量和电压,需配备专门的起爆线路,导致成本高、体积大,在常规武器中应用受限。为顺应爆炸箔起爆器低能化、小型化的发展趋势,获得充电电压在1.5... 爆炸箔起爆器因其高可靠性、高安全性而在各类战术武器中备受青睐,但其起爆需要较高的输入能量和电压,需配备专门的起爆线路,导致成本高、体积大,在常规武器中应用受限。为顺应爆炸箔起爆器低能化、小型化的发展趋势,获得充电电压在1.5 kV以下的爆炸箔起爆器,设计和制备一种采用TiW/Ni/Au复合薄膜的爆炸箔,并对其电爆性能和驱动能力进行了深入研究。研究结果表明:桥区尺寸为0.15 mm×0.15 mm的TiW/Ni/Au爆炸箔性能最佳,可在0.1μF储能电容、800 V充电电压下可靠发生电爆炸,使25μm厚的聚酰亚胺飞片,在直径350μm的加速膛剪切作用下,在0.4μs内加速到3 920 m/s;与Cu箔相比,800 V充电电压下,相同桥区尺寸的TiW/Ni/Au爆炸箔电爆炸能量利用效率从3.11%提高到了12.76%。 展开更多
关键词 爆炸箔 磁控溅射法 电爆特性测试 光子多普勒飞片测速
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