A passive Q-switched flash-lamp-pumped Nd∶YAG laser with the ion-implanted semi-insulating GaAs wafer is reported.The wafer is implanted with 400keV As+ ions in the concentration of 10 16cm -2.Using GaAs wafer as a...A passive Q-switched flash-lamp-pumped Nd∶YAG laser with the ion-implanted semi-insulating GaAs wafer is reported.The wafer is implanted with 400keV As+ ions in the concentration of 10 16cm -2.Using GaAs wafer as an absorber and an output coupler,62ns pulse duration of single pulse is obtained.展开更多
PA6, PA1010 and UHMMPE were implanted with 450keV N+ ion in doses of 5×10 14, 2.5×10 15 and 1.25×10 16/cm2. The friction and wear behaviors of ion-implanted and un-implanted polymers rubbing with two ...PA6, PA1010 and UHMMPE were implanted with 450keV N+ ion in doses of 5×10 14, 2.5×10 15 and 1.25×10 16/cm2. The friction and wear behaviors of ion-implanted and un-implanted polymers rubbing with two ceramic （ZrO2 and Si3N4） balls were studied using a ball-on-disk tribometer under dry friction. The results show that the friction coefficients and wear resistance of low dose implanted polymers are higher than those of un-implanted ones. The friction coefficient of polymers implanted with high dose is lower than that of samples with low dose. The wear resistant of polymers can be improved by ion implantation. The wear losses of implanted polymers decrease with the increase of implanted dose. The adhesive, plastic deformation and fatigue are wear mechanisms for un-implanted polymers and abrasive wear for implanted ones.展开更多
We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologicall...We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10^-14--10^-12m^2·V^-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.展开更多
Hard alloy were implanted with a dudl-ion of nitrogen and tatalum at temperature of 100℃ and 400℃ at a dose of 8×1017 ions cm-2 .Auger electron spectroscopy (AES) was used to determine the nitrogen and tantalum...Hard alloy were implanted with a dudl-ion of nitrogen and tatalum at temperature of 100℃ and 400℃ at a dose of 8×1017 ions cm-2 .Auger electron spectroscopy (AES) was used to determine the nitrogen and tantalum concentration profiles. Microhardness measurements were performed to evaluate the improvements in surface property. The thickness of implanted layers increased by about an order of magnitude when the temperature was elevated from 100℃ to 400 ℃. A higher surface hardness was also obtained in the higher temperature implantation. Scanning electron microscopy (SEM) image showed distinct microstructural changes, and X-ray diffiaction (XRD) analysis showed the presence of nitrides of tantalum and tungsten on the surface implanted.展开更多
文摘A passive Q-switched flash-lamp-pumped Nd∶YAG laser with the ion-implanted semi-insulating GaAs wafer is reported.The wafer is implanted with 400keV As+ ions in the concentration of 10 16cm -2.Using GaAs wafer as an absorber and an output coupler,62ns pulse duration of single pulse is obtained.
文摘PA6, PA1010 and UHMMPE were implanted with 450keV N+ ion in doses of 5×10 14, 2.5×10 15 and 1.25×10 16/cm2. The friction and wear behaviors of ion-implanted and un-implanted polymers rubbing with two ceramic （ZrO2 and Si3N4） balls were studied using a ball-on-disk tribometer under dry friction. The results show that the friction coefficients and wear resistance of low dose implanted polymers are higher than those of un-implanted ones. The friction coefficient of polymers implanted with high dose is lower than that of samples with low dose. The wear resistant of polymers can be improved by ion implantation. The wear losses of implanted polymers decrease with the increase of implanted dose. The adhesive, plastic deformation and fatigue are wear mechanisms for un-implanted polymers and abrasive wear for implanted ones.
文摘We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10^-14--10^-12m^2·V^-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.
文摘Hard alloy were implanted with a dudl-ion of nitrogen and tatalum at temperature of 100℃ and 400℃ at a dose of 8×1017 ions cm-2 .Auger electron spectroscopy (AES) was used to determine the nitrogen and tantalum concentration profiles. Microhardness measurements were performed to evaluate the improvements in surface property. The thickness of implanted layers increased by about an order of magnitude when the temperature was elevated from 100℃ to 400 ℃. A higher surface hardness was also obtained in the higher temperature implantation. Scanning electron microscopy (SEM) image showed distinct microstructural changes, and X-ray diffiaction (XRD) analysis showed the presence of nitrides of tantalum and tungsten on the surface implanted.
