Observation under high resolution electron microscope shows that the continuous bombing of high speed ions produces a great amount of vacant site defects.The assembly of vacancies forms vacant dish,and the collapase o...Observation under high resolution electron microscope shows that the continuous bombing of high speed ions produces a great amount of vacant site defects.The assembly of vacancies forms vacant dish,and the collapase of vacant dish forms stacking fault tetrahedrons and oth- er crystal defects.The interfaces between phase ε(Fe_(2-3)N)and phase γ'(Fe_4N)are smooth, straight and coherent,and they have the orientation relationships of(11)//(0001)and [110]/[110] .展开更多
At present, because the ion-nitriding technology is applied extensively in practice, manyresearchers in the materials science field have investigated the microstructure of theion-nitrided layer. However, the defect-fo...At present, because the ion-nitriding technology is applied extensively in practice, manyresearchers in the materials science field have investigated the microstructure of theion-nitrided layer. However, the defect-formation mechanism and interface structureare not clear. The authors have already found that there were vacancies and other defectsin ion-nitrided layers. This note first obtains the high resolution images and the interfacestructure atomic images of different phases in the ion bombing-nitrided layers with a high res-olution transmission electron microscope (HRTEM) and discloses the structures and interfacestructures between phases in the nitrided layers at atomic size.展开更多
文摘Observation under high resolution electron microscope shows that the continuous bombing of high speed ions produces a great amount of vacant site defects.The assembly of vacancies forms vacant dish,and the collapase of vacant dish forms stacking fault tetrahedrons and oth- er crystal defects.The interfaces between phase ε(Fe_(2-3)N)and phase γ'(Fe_4N)are smooth, straight and coherent,and they have the orientation relationships of(11)//(0001)and [110]/[110] .
基金Project supported by the Natural Science Foundation of Shandong Province.
文摘At present, because the ion-nitriding technology is applied extensively in practice, manyresearchers in the materials science field have investigated the microstructure of theion-nitrided layer. However, the defect-formation mechanism and interface structureare not clear. The authors have already found that there were vacancies and other defectsin ion-nitrided layers. This note first obtains the high resolution images and the interfacestructure atomic images of different phases in the ion bombing-nitrided layers with a high res-olution transmission electron microscope (HRTEM) and discloses the structures and interfacestructures between phases in the nitrided layers at atomic size.
