The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measur...The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.展开更多
The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and the...The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and then the SEU evaluation was conducted using ^209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.展开更多
Ozonation and ionizing radiation are both advanced oxidation processes（AOPs） without chemical addition and secondary pollution. Also, the two processes＇ efficiency is determined by different p H conditions, which c...Ozonation and ionizing radiation are both advanced oxidation processes（AOPs） without chemical addition and secondary pollution. Also, the two processes＇ efficiency is determined by different p H conditions, which creates more possibilities for their combination. Importantly,the combined process of ozonation and ionizing radiation could be suitable for treating wastewaters with extreme p H values, i.e., textile wastewater. To find synergistic effects, the combined process of ozonation and ionizing radiation mineralization was investigated for degradation of polyvinyl alcohol（PVA） at different p H levels. A synergistic effect was found at initial p H in the range 3.0–9.4. When the initial p H was 3.0, the combined process of ozonation and ionizing radiation gave a PVA mineralization degree of 17%. This was 2.7 times the sum achieved by the two individual processes, and factors of 2.1 and 1.7 were achieved at initial p H of7.0 and 9.4, respectively. The combined process of ozonation and ionizing radiation was demonstrated to be a feasible strategy for treatment of PVA-containing wastewater.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61574048 and 61204112the Science and Technology Research Project of Guangdong Province under Grant Nos 2015B090912002 and 2014A030313656the Pearl River S&T Nova Program of Guangzhou
文摘The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.
文摘The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and then the SEU evaluation was conducted using ^209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.
基金supported by the National High Technology Research and Development Program (No.2009AA063905)the General Research Program of Shanghai Normal University (No.SK201418)the Young Teacher Training Scheme of Shanghai Universities (No.ZZshsf14008)
文摘Ozonation and ionizing radiation are both advanced oxidation processes（AOPs） without chemical addition and secondary pollution. Also, the two processes＇ efficiency is determined by different p H conditions, which creates more possibilities for their combination. Importantly,the combined process of ozonation and ionizing radiation could be suitable for treating wastewaters with extreme p H values, i.e., textile wastewater. To find synergistic effects, the combined process of ozonation and ionizing radiation mineralization was investigated for degradation of polyvinyl alcohol（PVA） at different p H levels. A synergistic effect was found at initial p H in the range 3.0–9.4. When the initial p H was 3.0, the combined process of ozonation and ionizing radiation gave a PVA mineralization degree of 17%. This was 2.7 times the sum achieved by the two individual processes, and factors of 2.1 and 1.7 were achieved at initial p H of7.0 and 9.4, respectively. The combined process of ozonation and ionizing radiation was demonstrated to be a feasible strategy for treatment of PVA-containing wastewater.
