Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells

Long-term room-temperature annealing effects of InGaAs/InP quantum wells with different wells （namely triple wells and five wells embedded） and bulk InCaAs are investigated after high energy electron irradiation. It is observed that the photoluminescence （PL） intensity of bulk InGaAs materials is enhanced after low dose electron irradiation and the PL intensity for all the three samples is degraded dramatically when the electron dose is relatively high. With respect to the room-temperature annealing, we find that the PL intensity for both samples recovers relatively fast at the initial stage. The PL performance of multiple quantum-well samples shows better recovery after irradiation compared with the results of bulk InGaAs materials. Meanwhile, the recovery speed factors of multiple quantum-well samples are relatively faster than those of the bulk InGaAs materials as well. We infer that the recovery difference between the quantum-well materials and bulk materials originates from the fact that the radiation induced defects are confined in the quantum wells as a consequence of the free energy barrier between the In0.53Ga0.47 As wells and InP barrier layers.

Raman Spectra in Irradiated Graphene: Line Broadening, Effects of Aging and Annealing

The results of measurements of the Raman spectra in the same group of monolayer graphene samples, successively subjected to irradiation with different ions, prolonged aging, and annealing under different conditions, are considered. Changes in the position, width, and intensity of the Raman lines are analyzed in the study of the following problems: comparison of the results of irradiation with various ions, the influence of prolonged aging on the spectra of irradiated samples, the mechanism of broadening of Raman scattering lines caused by an increase in the density of radiation defects, the consequences of annealing of radiation damages in vacuum and in the atmosphere of the forming gas, the contribution of doping and lattice deformation to the shift of the position of the Raman lines after annealing. The results obtained made it possible to determine the level of stability of defects introduced by radiation, to reveal the possibility of restoring the damaged lattice using annealing. Since the results relate to graphene deposited on a widely used SiO2/Si substrate, they may be of interest when using ion irradiation to change the properties of graphene in appropriate devices.

Proton Irradiation and Thermal Annealing of GaAs Solar Cells

The investigation on proton irradiation and thermal annealing of AlGaAs/GaAs solar cells has been reported.The energy of the proton irradiation is 325keV and the fluences are ranging from 5×10 10 to 1×10 13 cm -2 .It is demonstrated that the irradiation-induced degradation in the photovoltaic performance of the solar cells exists mainly in the short circuit current and the irradiation damage can be partly recovered by low temperature annealing at 200℃.In addition,it is found that the borosilicate cover glass has an obvious protection effect against the proton irradiation.

In-situ TEM observation of the evolution of helium bubbles in Mo during He^(+)irradiation and post-irradiation annealing

The evolution of helium bubbles in purity Mo was investigated by in-situ transmission electron microscopy(TEM)during 30 keV He^(+)irradiation(at 673 K and 1173 K)and post-irradiation annealing(after 30 keV He^(+)irradiation with the fluence of 5.74×10^(16)He^(+)/cm^(2)at 673 K).Both He^(+)irradiation and subsequently annealing induced the initiation,aggregation,and growth of helium bubbles.Temperature had a significant effect on the initiation and evolution of helium bubbles.The higher the irradiation temperature was,the larger the bubble size at the same irradiation fluence would be.At 1173 K irradiation,helium bubbles nucleated and grew preferentially at grain boundaries and showed super large size,which would induce the formation of microcracks.At the same time,the geometry of helium bubbles changed from sphericity to polyhedron.The polyhedral bubbles preferred to grow in the shape bounded by{100}planes.After statistical analysis of the characteristic parameters of helium bubbles,the functions between the average size,number density of helium bubbles,swelling rate and irradiation damage were obtained.Meanwhile,an empirical formula for calculating the size of helium bubbles during the annealing was also provided.

Influence of vacuum annealing and irradiation on magnetic properties of Fe-3% Y_2O_3 films

Yttria （Y） dispersed ferrum （Fe） films were prepared by a double-target magnetron co-sputtering method. Vacuum annealing and xenon ion irradiation were conducted to investigate the influence on the magnetic and mechanical properties of the films. The crystal grain growth mechanism and second phase precipitation mechanism were conducted simultaneously in the vacuum annealing process. These two effects led to an opposite variation of nano-hardness and coercivity in the films. Xenon ion irradiation played a role in rapid annealing, which also affected the magnetic performance of the yttria dispersed ferrum films.

Parametric optimization and performance comparison of organic Rankine cycle with simulated annealing algorithm

Taking the ratio of heat transfer area to net power and heat recovery efficiency into account, a multi-objective mathematical model was developed for organic Rankine cycle （ORC）. Working fluids considered were R123, R134a, R141b, R227ea and R245fa. Under the given conditions, the parameters including evaporating and condensing pressures, working fluid and cooling water velocities were optimized by simulated annealing algorithm. The results show that the optimal evaporating pressure increases with the heat source temperature increasing. Compared with other working fluids, R123 is the best choice for the temperature range of 100--180℃ and R141 b shows better performance when the temperature is higher than 180 ℃. Economic characteristic of system decreases rapidly with the decrease of heat source temperature. ORC system is uneconomical for the heat source temperature lower than 100℃.

Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron （1.5 MeV） at 360 K.Two groups of samples with low [Oi] = 6.9 x 10^17 cm^-3 and high [Oi] = 1.06 x 10^18 cm^-3 were used.We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen,it is hardly changed in the higher concentration of oxygen specimen.It was also found that the concentration of VO2 in lower concentration of oxygen specimen gets to maximum at 450 ℃ and then dissapears at 500 ℃,accompanied with the appearing of VO3. For both kinds of specimens,the concentration of VO3 reachs to maximum at 550 ℃ and does not disappear completely at 600 ℃.

Application of low-temperature thermochronology on ore deposits preservation framework in South China:a review

South China can be divided into four metallogenic belts:The Middle-Lower Yangtze Metallogenic Belt(MLYB),Qinzhou-Hangzhou Metallogenic Belt(QHMB),Nanling Metallogenic Belt(NLMB),and Wuyi Metallogenic Belt(WYMB).The major mineralization in the four metallogenic belts is granite-related Cu–Au–Mo and porphyrite Fe-apatite,porphyry Cu(Au),and epithermal Pb–Zn–Ag,hydrothermal Cu–Au–Pb–Zn–Ag,and granite-related skarn-type and quartz-veins W–Sn,respectively.Low-temperature thermochronology,including fissiontrack and U-Th/He dating,has been widely used to constrain tectonic thermal evolution and ore deposits preservation.Understanding fission-track annealing and He diffusion kinetics in accessory minerals,such as zircon and apatite,is essential for dating and applications.In this study,previous zircon fission-track(ZFT)and apatite fission-track(AFT)ages in South China were collected.The result shows that the ZFT ages are mainly concentrated at140–90 Ma,and the AFT ages are mainly distributed at70–40 Ma.The age distribution and inversion temperature–time paths reveal heterogeneous exhumation histories in South China.The MLYB experienced Late CretaceousCenozoic extremely slow exhumation after rapid cooling in the Early Cretaceous.The northern QHMB(i.e.from southern Anhui province to the Hangzhou Bay)had a relatively faster rate of uplifting and denudation than the southern QHMB in the Cretaceous.Subsequently,the northern QHMB rapidly exhumed,while the continuously slow exhumation operated the southern QHMB in the Cenozoic.The southern NLMB had a more rapid cooling rate than the northern NLMB during the Cretaceous time,and the whole NLMB experienced rapid cooling in the Cenozoic,except that the southern Hunan province had the most rapid cooling rate.The WYMB possibly had experienced slow exhumation since the Late Cretaceous.The exhumation thickness of the four metallogenic belts since90 Ma is approximately calculated as follows:the MLYB≤3.5 km,the northern QHMB concentrated at3.5–5.5 km,and the southern QHMB usually less than3.5 km,the NLMB 4.5–6.5 km and the WYMB<3.5 km.The exhumation thickness of the NLMB is corresponding to the occurrence of the world-class W deposits,which were emplaced into a deeper depth of 1.5–8 km.As such,we infer that the uplifting and denudation processes of the four metallogenic belts have also played an important role in dominated ore deposits.

Positron annihilation study of defects in GaAs irradiated by fission neutron

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Achieving superior strength-ductility synergy in a heterostructured magnesium alloy via low-temperature extrusion and low-temperature annealing

A low-alloyed Mg-1.2Zn-0.1Ca(wt.%)alloy was fabricated via low-temperature extrusion and annealing at 250℃for different times(10,30,and 90 min)to attain heterostructures with different fine-grained fractions,focusing on the effect of heterostructure on the mechanical properties.Partial dynamic recrystallization(RX)occurred during extrusion at 150℃,and a lamellar structure consisting of fine RX grains and coarse unRX grains was obtained.The subsequent annealing promoted static RX in the as-extruded alloy,leading to an increased fine-grained fraction from 67%to 95%.Meanwhile,the co-segregation of Zn and Ca atoms impeded the migration of grain boundaries,thus achieving a fine grain size of 0.8–1.6μm.The sample annealed for 10 min with a fine-grained fraction of 73%and an average RX grain size of 0.9μm exhibited a superior combination of high yield strength(305 MPa)and good ductility(20%).In comparison,an excellent elongation of 30%was achieved in the alloy with a nearly fully-RXed microstructure and an average grain size of 1.6μm after 90 min annealing,despite a lower yield strength of 228 MPa.In unRX grains,the hard orientation with(01–10)parallel to the extrusion direction and high-density dislocations made it more difficult to deform compared with the RX grains,thus producing hetero-deformation induced(HDI)strengthening.Besides fine grains and high-density dislocations,HDI strengthening is the key to achieving the superior mechanical properties of the low-alloyed Mg alloy.

Effect of Post-irradiation Annealing on Microstructure Evolution and Hardening in GH3535 Alloy Irradiated by Au Ions

The Au ion-irradiation experiments of GH3535 alloy,a candidate alloy structural material for molten salt reactor,was carried out in this study.Herein,isochronous annealing experiments were conducted from 200 to 850 ℃ to clarify the evolution behavior of damage defects with increasing temperature.The coarsening of dislocation loops and formation and dissolution of precipitates with increasing annealing temperature were characterized by transmission electron microscopy.Nanoindentation was performed to measure the variation of hardness caused by irradiation.Additionally,the relationship between irradiation hardening and microstructure evolution was established.This study lays a foundation for the evaluation of irradiation damage properties of GH3535 alloy at different annealing temperatures.

Effect of Ar ion irradiation on the room temperature ferromagnetism of undoped and Cu-doped rutile TiO_2 single crystals

Remarkable room-temperature ferromagnetism was observed both in undoped and Cu-doped rutile TiO2 single crystals（SCs）.To tune their magnetism,Ar ion irradiation was quantitatively performed on the two crystals in which the saturation magnetizations for the samples were enhanced distinctively.The post-irradiation led to a spongelike layer in the near surface of the Cu-doped TiO2.Meanwhile,a new CuO-like species present in the sample was found to be dissolved after the post-irradiation.Analyzing the magnetization data unambiguously reveals that the experimentally observed ferromagnetism is related to the intrinsic defects rather than the exotic Cu ions,while these ions are directly involved in boosting the absorption in the visible region.

Irradiation Effect of C_(60) Films Induced by 2.0 GeV Xe Ions

In this paper we present experimentaI results on irradiation effects of C_(60) fims induced by 2.0 GeV^(136)Xe.The C_(60) fims were prepared by vacuum evaporation at a temperature close to 450℃ onto Al foils.The C_(60) layers on Al foils were arranged as a foil stack with the intention of using them to search for preliminary information concerning the overall depth distribution of damage following 2.0 GeV Xe ions irradiations.To

Phase structure of the CPD prepared CdS films before and after Ar^+ ion irradiation

CdS films prepared with chemical pyrolysis deposition (CPD) at differ- ent temperature during film growth were characterized by XRD. Hexagon-like struc- ture appeared at the temperature of 350-500℃, while wurtzite phase was observed at temperature of 540℃ during film growth. Also CdS films prepared by CPD at 400℃ were undergone post annealing at different temperature of 200-600℃ or post Ar+ ion irradiation. It is found that wurtzite phase happened when the annealing temperature rose to 600℃. And hexagon-like structure existed at the annealing temperature from 25℃ to near 500℃. Ar+ ion irradiation could not cause phase transformation. but induce some preferred orientations and an increase in grain size for the CdS films.

Achieving a remarkable low-temperature tensile ductility in a high-strength tungsten alloy

Hot-swaging yields a high ultimate tensile strength of 712 MPa but a limited tensile ductility with the total elongation of3.6%at a testing temperature of 200℃in a representative W-0.5wt.%ZrC alloy.In this work,the evolution of Vickers microhardness with annealing temperatures is investigated in detail,which contributes to a rough index chart to guide the search for an optimized post-annealing temperature.Through the post-annealing around 1300℃,an outstanding tensile ductility at200℃,including a uniform elongation of 14%and a total elongation of~25%,has been achieved without the sacrifice of its strength.The evolution of dislocations and grain structures with the annealing temperatures accessed through backscattered scanning electron microscope and transmission electron microscope analysis reveals that the improved low-temperature tensile ductility has resulted from the reduction of residual dislocations and dislocation tanglement via the static recovery,which provides more room to accommodate dislocations,and hence stronger strain hardening ability and tensile ductility.

基于硅光电倍增管的Cs_(2)LiYCl_(6)(CLYC)探测器快中子辐照效应研究

实验通过将硅光电倍增管(silicon photomultiplier,SiPM)器件和Cs_(2)LiYCl_(6)(CLYC)闪烁体探测器暴露于14 MeV的快中子场中,最高累积注量达到1.53×10^(11) cm^(-2),分析了中子辐照对SiPM器件参数和CLYC探测器性能的影响。重点研究了不同注量辐照前后,SiPM的增益、暗计数率、暗电流、击穿电压和淬灭电阻等参数,以及CLYC探测器探测性能的变化情况和原因,其中暗计数率最高上升了3个数量级,暗电流最高上升了2个数量级,CLYC探测器的能量分辨率去除本底后下降了1.4%。辐照实验后,在室温条件下对SiPM和CLYC探测器进行退火,研究SiPM器件参数和探测器性能恢复情况。SiPM和CLYC探测器的性能会随着中子注量的增加而逐渐变差。对于SiPM,主要表现为暗计数率和暗电流的提高。对于CLYC探测器,主要表现为能量分辨率的降低。退火过程有助于减轻中子辐照的影响,恢复SiPM和CLYC探测器的部分性能。

^(60)Co Gamma Irradiation and Annealing Effects on Transport Properties of Antimony Telluride Platelets Grown by Physical Vapor Deposition

Physical vapor deposition method was employed to deposit antimony telluride （Sb2Te3） crystals in a dual-zone furnace. The microstructure, surface topography and composition of samples were characterized using X-ray diffraction, atomic force and scanning electron microscopy. Seebeck coefficient （Sic）, electrical conductivity （σ⊥c） as well as power factor （PF） were enhanced for pure Sb2Te3 samples upon annealing, and the samples annealed at 473 K exhibited the highest PF of 3.16 × 10^-3 W m-1K-2 with an enhancement of 22% in the figure of merit （Z）. When the delivered dose of 60Co gamma radiation was increased from 0 to 30 kGy in the stoichiometric crystals, σ⊥c decreased due to the decrease in mobility. As a result of the increase in S, PF and Z improved by 12.11 and 13.7%, respectively, in the 30 kGy gamma- irradiated crystals. Both RH （BIIc） and S⊥c were positive, suggesting that the prepared Sb2Te3 crystals retained the p-type semiconductivity after these treatments.

多量子阱激光二极管质子辐射效应及其退火特性

研究5和2MeV质子对法布里-珀罗（FP）腔结构及分布反馈（DFB）结构的多量子阱激光二极管的辐射效应，结果显示：在5×10^12～5×10^12cm^-2质子注量范围内，随着注量的增大，激光二极管阈值电流逐渐增大，电流电压特性的低压区电流渐渐增大。由^60Coγ总剂量实验结果推断：质子对实验器件的损伤源于质子位移效应。采用Trim程序的模拟结果表明：在2MeV质子射程以内，2MeV质子要比5MeV质子产生的空位数多。这使得相同辐照注量下，2MeV质子要比5MeV质子导致的阈值电流增大更多，损伤更为严重。激光二极管辐射损伤存在着正向偏置退火效应，FP和DFB结构的二极管具有相似的加电退火规律，均可拟合成指数衰减形式，退火曲线可以分成退火常数不同的几段进行拟合。正向偏置退火效应使得辐照期间，处于加电状态的激光二极管比处于短路状态的激光二极管退化程度有所减弱。

CMOS运算放大器的电子和^(60)COγ辐照效应及退火特性

研究了LF7650CMOS运算放大器电路在1MeV电子和~60Coγ两种不同辐射环境中的响应特性及变化规律，并通过对其电高辐照敏感参数，辐照后在室温和100℃高温条件下，随时间变化关系的分析，探讨了引起电参数失效的机理。结果表明，由于电离辐射产生的界面态增加，引起的多数载流子迁移率的减小，导致MOSFET跨导的下降，是造成CMOS运算放大器电路失效的主要机制，也是引起1MeV电子辐照的损伤敏感度明显大于~60Coγ射线的原因所在。

高速CMOS电路电离辐照损伤的剂量率效应

对国产加固６４ＨＣ０４高速ＣＭＯＳ电路进行了不同剂量率的辐照响应和室温退火特性研究。探讨了５４ＨＣ０４电路在不同剂量率辐照下的损伤机理和失效模式的差异及其对高速ＣＭＯＳ电路在辐射环境中应用可靠性的影响。