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Thermal Characteristics of PVA-PANI-ZnS Nanocomposite Film Synthesized by Gamma Irradiation Method
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作者 Afarin Bahrami Kasra Behzad +1 位作者 Nastaran Faraji Alireza Kharazmi 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第11期83-85,共3页
Gamma irradiation is employed for in situ preparation of PVA-PANI-ZnS nanocomposite. The irradiation dose is varied from 10 to 40 kGy at 10 kGy intervals. The XRD result confirms the formation of crystalline phases co... Gamma irradiation is employed for in situ preparation of PVA-PANI-ZnS nanocomposite. The irradiation dose is varied from 10 to 40 kGy at 10 kGy intervals. The XRD result confirms the formation of crystalline phases corresponding to ZnS nanoparticles, PVA and PANI. Field emission scanning electron microscopy shows the formation of agglomerated PANI along the PVA backbone, within which the ZnS nanoparticles are dispersed.UV-visible spectroscopy is conducted to measure the transmittance spectra of samples revealing the electronic absorption characteristics of ZnS and PANI nanoparticles. Photo-acoustic(PA) setup is installed to investigate the thermal properties of samples. The PA spectroscopy indicates a high value of thermal diffusivity for samples due to the presence of ZnS and PANI nanoparticles. Moreover, at higher doses, the more polymerization and formation of PANI and ZnS nanoparticles result in enhancement of thermal diffusivity. 展开更多
关键词 ZNS XRD Thermal Characteristics of PVA-PANI-ZnS Nanocomposite film Synthesized by Gamma Irradiation Method PVA
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Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma
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作者 叶超 康健 +1 位作者 宁兆元 程珊华 《Plasma Science and Technology》 SCIE EI CAS CSCD 2000年第5期469-474,共6页
a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radic... a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radicals in plasma originating from source gases dissociation are analyzed by relative irradiance measurement. The bonding configurations and binding state of a-C:F films are measured with Fourier-transformed infrared spectrometer (FTIR) and x-ray photoelectron spectroscopy (XPS). The results show that a-C:F films are mainly composed of CF radical at lower powers but of CF2 radical at higher powers. The deposition of films is related to the radicals generated in plasma and the main bonding configurations are dependent on the ratio of CF to CF2 radicals in films. 展开更多
关键词 CHF XPS cm Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon films Deposited by Electron Cyclotron Resonance Plasma
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