Molecular dynamics study of interactions between edge dislocation and irradiation-induced defects in Fe–10Ni–20Cr alloy

Irradiation-induced defects frequently impede the slip of dislocations, resulting in a sharp decline in the performance of nuclear reactor structural materials, particularly core structural materials. In the present work, molecular dynamics method is used to investigate the interactions between edge dislocations and three typical irradiation-induced defects(void,Frank loop, and stacking fault tetrahedron) with the sizes of 3 nm, 5 nm, and 7 nm at different temperatures in Fe–10Ni–20Cr alloy. The critical resolved shear stresses(CRSSs) are compared among different defect types after interacting with edge dislocations. The results show that the CRSS decreases with temperature increasing and defect size decreasing for each defect type during the interaction with edge dislocations, except for the case of 3-nm Frank loops at 900 K. According to a comparison, the CRSS in Frank loop is significantly higher than that of others of the same size, which is due to the occurrence of unfaulting and formation of superjog or stacking-fault complex during the interaction. The atomic evolution of irradiation-induced defects after interacting with dislocations can provide a novel insight into the design of new structural materials.

Influence of helium on the evolution of irradiation-induced defects in tungsten:An object kinetic Monte Carlo simulation

Understanding the evolution of irradiation-induced defects is of critical importance for the performance estimation of nuclear materials under irradiation.Hereby,we systematically investigate the influence of He on the evolution of Frenkel pairs and collision cascades in tungsten(W)via using the object kinetic Monte Carlo(OKMC)method.Our findings suggest that the presence of He has significant effect on the evolution of irradiation-induced defects.On the one hand,the presence of He can facilitate the recombination of vacancies and self-interstitial atoms(SIAs)in W.This can be attributed to the formation of immobile He-SIA complexes,which increases the annihilation probability of vacancies and SIAs.On the other hand,due to the high stability and low mobility of He-vacancy complexes,the growth of large vacancy clusters in W is kinetically suppressed by He addition.Specially,in comparison with the injection of collision cascades and He in sequential way at 1223 K,the average sizes of surviving vacancy clusters in W via simultaneous way are smaller,which is in good agreement with previous experimental observations.These results advocate that the impurity with low concentration has significant effect on the evolution of irradiation-induced defects in materials,and contributes to our understanding of W performance under irradiation.

Photoluminescence Analysis of Injection-Enhanced Annealing of Electron Irradiation-Induced Defects in GaAs Middle Cells for Triple-Junction Solar Cells

Photolumineseenee measurements are carried out to investigate the injection-enhanced annealing behavior of electron radiation-induced defects in a GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells which are irradiated by 1.8 MeV with a fluence of i ~ 1015 cm-2. Minority-carrier injection under forward bias is observed to enhance the defect annealing in the GaAs middle cell, and the removal rate of the defect is determined with photoluminescenee radiative efficiency recovery. Furthermore, the injection-enhanced defect removal rates obey a simple Arrhenius law. Therefore, the annealing activation energy is acquired and is equal to 0.58eV. Finally, in comparison of the annealing activation energies, the E5 defect is identified as a primary non-radiative recombination center.

Some recent advances in ab initio calculations of nonradiative decay rates of point defects in semiconductors

In this short review,we discuss a few recent advances in calculating the nonradiative decay rates for point defects in semiconductors.We briefly review the debates and connections of using different formalisms to calculate the multi-phonon processes.We connect Dr.Huang's formula with Marcus theory formula in the high temperature limit,and point out that Huang's formula provide an analytical expression for the phonon induced electron coupling constant in the Marcus theory formula.We also discussed the validity of 1D formula in dealing with the electron transition processes,and practical ways to correct the anharmonic effects.

Energetics and diffusion of point defects in Au/Ag metals:A molecular dynamics study

To reveal the potential aging mechanism for self-irradiation in Pu-Ga alloy,we choose Au-Ag alloy as its substitutional material in terms of its mass density and lattice structure.As a first step for understanding the microscopic behavior of point defects in Au-Ag alloy,we perform a molecular dynamics(MD)simulation on energetics and diffusion of point defects in Au and Ag metal.Our results indicate that the octahedral self-interstitial atom(SIA)is more stable than the tetrahedral SIA.The stability sequence of point defects for He atom in Au/Ag is:substitutional site>octahedral interstitial site>tetrahedral interstitial site.The He-V cluster(Hen Vm,V denotes vacancy)is the most stable at n=m.For the mono-vacancy diffusion,the MD calculation shows that the first nearest neighbour(1 NN)site is the most favorable site on the basis of the nudged elastic band(NEB)calculation,which is in agreement with previous experimental data.There are two peaks for the second nearest neighbour(2 NN)and the third nearest neighbour(3 NN)diffusion curve in octahedral interstitial site for He atom,indicating that the 2 NN and 3 NN diffusion for octahedral SIA would undergo an intermediate defect structure similar to the 1 NN site.The 3 NN diffusion for the tetrahedral SIA and He atom would undergo an intermediate site in analogy to its initial structure.For diffusion of point defects,the vacancy,SIA,He atom and He-V cluster may have an analogous effect on the diffusion velocity in Ag.

ATOMISTIC SIMULATION OF POINT DEFECTS IN NiAl ALLOY

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Formation energies and electronic structures of native point defects in potassium dihydrogen phosphate

The formation energies and the equilibrium concentration of vacancies, interstitial H, K, P, O and antisite structural defects with P and K in KH2PO4 （KDP） crystals are investigated by ab initio total-energy calculations. The formation energy of interstitial H is calculated to be about 2.06 eV and we suggest that it may be the dominant defect in KDP crystal. The formation energy of an O vacancy （5.25 eV） is much higher than that of interstitial O （0.60 eV）. Optical absorption centres can be induced by defects of O vacancies, interstitial O and interstitial H. We suggest that these defects may be responsible for the lowering of the damage threshold of the KDP. A K vacancy defect may increase the ionic conductivity and therefore the laser-induced damage threshold decreases.

Study of Dielectric and Mechanical Spectra on Point Defects and Phase Transition in Ferroelectric Ceramics

Ferroelectric materials have enormous potential applications in advanced techniques. However, there are still many problems in its practical application. Dielectric and mechanical (internal friction) measurements are very sensitive to phase transitions, relaxation process of point defects, domain walls and their mobility, which have severe effect on ferroelectric properties. These make them become very good means to investigate substantial information on structural features and to explore the fundamental principles in ferroelectric materials and their applications. In this paper, the dielectric and internal friction measurement were used to investigate the behaviors for point defects and phase transition in ferroelectric ceramics such as Bi_ 4-x La_ x Ti_ 3 O_ 12 , Bi_ 4 Ti_ 3-y Nb_ y O_ 12 , SrBi_ 2 Ti_ 2 O_ 9 , PbZr_ x Ti_ 1-x O_ 3 ,_ PMN-PT. They were used to clarify the mechanism for some ferroelectric behaviors.

Different Thermal Stabilities of Cation Point Defects in LaAlO_3 Bulk and Films

Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO3 bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptors. The formation energies show that cation vacancies are energetically favorable in bulk LaAIO3 under O-rich conditions, while the AILa antisites are stable in reducing atmosphere. However, the same behavior does not appear in the case of LaAlO3 films. For LaO-terminated LaAlOa fihns, La or AI vacancies remain energetically favorable under O-rich and O-deficient conditions. For an AlO2-terminated surface, under O-rich condition the La interstitial atom is repelled from the outmost layer after optimization, which releases more stress leading to the decrease of total energy of the system. An AI interstitial atom has a smaller radius so that it can stay in distorted films and becomes more stable under O-deficient conditions, and the Al interstitial atoms can be another possible carrier source contribution to the conductivity of n-type interface under an ultrahigh vacuum. La and Al antisites have similar formation energy regardless of oxygen pressure. The results would be helpful to understand the defect structures of LaAlOa-related materials.

First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the properties of point defects like vacancies and interstitials is essential for the successful application of semiconductor materials. In the present study, first-principles calculations are carried out to explore the stability of point defects in GaAs/Al_(0.5)Ga_(0.5)As superlattice and their effects on electronic properties. The results show that the interstitial defects and Frenkel pair defects are relatively difficult to form, while the antisite defects are favorably created generally. Besides, the existence of point defects generally modifies the electronic structure of GaAs/Al_(0.5)Ga_(0.5)As superlattice significantly, and most of the defective SL structures possess metallic characteristics. Considering the stability of point defects and carrier mobility of defective states,we propose an effective strategy that AlAs, GaAs, and AlGaantisite defects are introduced to improve the hole or electron mobility of GaAs/Al_(0.5)Ga_(0.5)As superlattice. The obtained results will contribute to the understanding of the radiation damage effects of the GaAs/AlGaAs superlattice, and provide a guidance for designing highly stable and durable semiconductor superlattice-based electronics and optoelectronics for extreme environment applications.

Gamma ray irradiation induced point defects in BaF_2

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Point Defect Phenomena of Crystalline Structure in Some Common Structural Materials

The existence and its movement rule of crystalline structure defect are closely related to the diffusion, solid phase reaction, sintering, phase transformation as well as the physical and chemical properties of materials. Point defect theory has been widely applied in material mineralization research, unfavorable transformation controlling, material modification, the research and development of new materials and so on. Point defect theory is one of the important theories for new material research and development. Herein we mainly discuss the application of point defect theory in some structural material researches.

Roles of crystal defects in the persistent luminescence of Eu^(2+), Dy^(3+) co-doped strontium aluminate based phosphors

The roles of different point defects in persistent luminescence of SrAl2O4：Eu,Dy phosphors were investigated. The research results showed that Dyer plays an important role in the persistent luminescence of SrA1EO4：Eu, Dy phosphors. It can serve as the electron trap of suitable depth for persistent luminescence. V~ does not serve as the electron trap of suitable depth, but its existence can increase the depth of electron traps. There is interaction between the Dy^3＋（ DySr ） and the Eu^2＋（Eu^x Sr ）, and only if the distance between the Dy^3＋（DySr） and the Eu^2＋ （Eu^x Sr） is close enough, the Dyer can work as an effective electron trap. The point defect of V＂ Sr can be hole trap, but the change of its density in crystal matrix does not arouse the obvious change of persistent luminescence.

Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode

Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy （SIMS）, transmission electron microscope （TEM）, and capacitance-voltage （C-V） measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.

Comprehensive, in operando, and correlative investigation of defects and their impact on device performance

Despite the long history of research that has focused on the role of defects on device performance, the studies have not always been fruitful. A major reason is because these defect studies have typically been conducted in a parallel mode wherein the semiconductor wafer was divided into multiple pieces for separate optical and structural characterization, as well as device fabrication and evaluation. The major limitation of this approach was that either the defect being investigated by structural characterization techniques was not the same defect that was affecting the device performance or else the defect was not characterized under normal device operating conditions. In this review, we describe a more comprehensive approach to defect study, namely a series mode, using an array of spatially-resolved optical, electrical, and structural characterization techniques, all at the individual defect level but applied sequentially on a fabricated device. This novel sequential approach enables definitive answers to key questions, such as:(ⅰ) how do individual defects affect device performance?(ⅱ) how does the impact depend on the device operation conditions?(ⅲ) how does the impact vary from one defect to another? Implementation of this different approach is illustrated by the study of individual threading dislocation defects in GaAs solar cells. Additionally,we briefly describe a 3-D Raman thermometry method that can also be used for investigating the roles of defects in high power devices and device failure mechanisms.

Resonant Modes of One-Dimensional Metamaterial Containing Helmholtz Resonators with Point Defect

The metamaterial constructed by Helmholtz resonators (HR) has low-frequency acoustic forbidden bands and possesses negative mass density and effective bulk modulus at particular frequencies. The resonant modes in one-dimensional HR structure with point defect were studied using finite element method (FEM). The results show that the acoustic energy is localized between the resonant HR and the opening in the local-resonant-type gap. There is a high pressure area around the defect resonator at the frequency of defect mode. In the Bragg type gap, the energy mainly distributes in the waveguide with harmonic attenuation due to the multi-scattering. Phase opposition demonstrates the existence of negative dynamic mass density. Local negative parameter is observed in the pass band due to the defect mode. Based on further investigation of the acoustic intensity and phase distributions in the resonators corresponding to two different forbidden bands, only one local resonant mode is verified, which is different from the three-component local resonant phononics. This work will be useful for understanding the mechanisms of acoustic forbidden bands and negative parameters in the HR metamaterial, and of help for designing new functional acoustic devices.

Spherical Asymmetric Solution for Point Defect

The article proves unsingleness of solution for the known elastic equilibrium equation for point defect. Another linear-independent solution. meeting the same boundary conditions as the classical one, has been found.

Point defect states of a hollow cylinder in two-dimensional phononic crystal

Point defect states in two-dimensional phononic crystal of a hollow mercury cylinder in a water host are studied. An improved plane expansion method combined with the supercell technique is used to calculate the band gaps and the pressure distribution at the defect position. The sonic pressure of defect modes shows that the waves are localized at or near the defect. As the filing fraction increases, more defect modes appear in the band gaps.

Determination of Ring-OSF Position in Czochralski Silicon Single Crystals by Numerical Analysis of Distribution of Grown-in Defects

A numerical analysis technique that incorporates Voronkov's model were examined and used to estimate the distribution of defects during crystal growth. By comparisons of the distribution of the density of LSTD and the position of R-OSF in non-nitrogen-doped (non-N-doped) and nitrogen-doped (N-doped) silicon crystals, it is found that the results of the numerical analyses agree with practically evaluated data. The observations suggest that the R-OSF nucleus is a VO2 complex that is formed by bonds between oxygen atoms and residual vacancies consumed during the formation of void defects. This suggests that Voronkov's model can be used to accurately predict the generation and growth of defects in silicon crystals. This numerical analysis technique was also found to be an effective method of estimating the distribution of defects in silicon crystals during crystal growth.

Structural defects in L1_0 FePt by modified analytic embedded-atom method

The structural defects of L10 FePt are investigated by the molecular dynamics (MD) with a modified analytic embedded-atom method (MAEAM). The L10 ordered structure of FePt is relaxed from a trial fcc structure. The defect formation energies are calculated. The vacancy formation energies of Fe and Pt are 1.89 eV and 2.11 eV respectively. The antisite formation energy of Fe in Pt sublattice is 0.35 eV. The antisite formation energy of Pt in Fe sublattice is 0.09 eV. The tendency of the vacancy formation energy is in agreement with other calculation. The point defect structure types are Pt antisite in rich-Pt side and Fe antisite in rich-Fe side.