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Exciton-Phonon Coupling of NN_3 Center in Heavily Nitrogen Doped GaP
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作者 高玉琳 吕毅军 +4 位作者 郑健生 张勇 A.Mascarenhas 辛火平 杜武青 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第8期889-893,共5页
Under heavy nitrogen doping,due to the “concentration quenching” effect,the full spectrum of the NN 3 center is revealed without the interference from the spectra of other higher energy centers.This investigation o... Under heavy nitrogen doping,due to the “concentration quenching” effect,the full spectrum of the NN 3 center is revealed without the interference from the spectra of other higher energy centers.This investigation offers a direct proof for that all the phonon replicas are the phonon sidebands governed by the Huang Rhys’ multiphonon optical transition theory. 展开更多
关键词 GaPN PHOTOLUMINESCENCE isoelectronic impurity
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