The impacts of shallow trench isolation(STI)indium implantation on gate oxide and device characteristics are studied in this work.The stress modulation effect is confirmed in this research work.An enhanced gate oxide ...The impacts of shallow trench isolation(STI)indium implantation on gate oxide and device characteristics are studied in this work.The stress modulation effect is confirmed in this research work.An enhanced gate oxide oxidation rate is observed due to the enhanced tensile stress,and the thickness gap is around 5%.Wafers with and without STI indium implantation are manufactured using the 150-nm silicon on insulator(SOI)process.The ramped voltage stress and time to breakdown capability of the gate oxide are researched.No early failure is observed for both wafers the first time the voltage is ramped up.However,a time dependent dielectric breakdown(TDDB)test shows more obvious evidence that the gate oxide quality is weakened by the STI indium implantation.Meanwhile,the device characteristics are compared,and the difference between two devices is consistent with the equivalent oxide thickness(EOT)gap.展开更多
we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsi...we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose （TID） responses in the STI oxide. A radiation enhanced drain induced barrier lower （DIBL） effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.展开更多
Spontaneous rupture of hepatocellular carcinoma(HCC) is a life-threatening complication and its prognosis is significantly poor because of the high recurrence rate after initial hepatectomy. Resection of isolated extr...Spontaneous rupture of hepatocellular carcinoma(HCC) is a life-threatening complication and its prognosis is significantly poor because of the high recurrence rate after initial hepatectomy. Resection of isolated extrahepatic metastasis of HCC has been advocated to obtain a possibility of long-term survival. However, it is a challenge for clinicians to detect implantation metastasis of spontaneously ruptured HCC. Accurate re-staging plays the most important role in making a decision on isolated metastasis resection. 18F-fluorodeoxyglucose(18F-FDG) positron emission tomography/computed tomography(PET/CT) is useful in detecting intraabdominal implantation metastasis from a variety of malignancies and shows superior accuracy to conventional imaging modalities in determining the location of metastasis. We present one patient with a new isolated pelvic implantation metastasis detected by 18F-FDG PET/CT and pathologically confirmed by PET/CT-guided percutaneous biopsy, who had a history of resection of spontaneously ruptured HCC two years ago. The patient's condition was stable at the 6-mo follow-up after resection of the isolated pelvic metastasis.展开更多
基于F离子注入隔离技术实现一种新型微缩化发光二极管(micromicro-LED)阵列器件,并系统研究注入能量及发光孔径对micro-LED阵列器光电性能的影响.研究结果表明:相比于F离子50 ke V单次注入器件, 50/100 ke V两次注入器件具有更好的光电...基于F离子注入隔离技术实现一种新型微缩化发光二极管(micromicro-LED)阵列器件,并系统研究注入能量及发光孔径对micro-LED阵列器光电性能的影响.研究结果表明:相比于F离子50 ke V单次注入器件, 50/100 ke V两次注入器件具有更好的光电性能,器件反向漏电降低8.4倍,光输出功率密度提升1.3倍.同时,在不同的发光孔径(6, 8, 10μm)条件下,器件反向漏电流均为3.4×10–8 A,但正向工作电压随孔径增大而减小,分别为3.3, 3.1, 2.9 V.此外,器件不同发光孔径的有效发光面积比(实际发光面积与器件面积之比)分别为85%, 87%, 92%.与传统台面刻蚀micro-LED器件相比,离子注入隔离技术实现的micro-LED器件具有较低反的向漏电流密度、较高的光输出密度及有效发光面积比.展开更多
文摘The impacts of shallow trench isolation(STI)indium implantation on gate oxide and device characteristics are studied in this work.The stress modulation effect is confirmed in this research work.An enhanced gate oxide oxidation rate is observed due to the enhanced tensile stress,and the thickness gap is around 5%.Wafers with and without STI indium implantation are manufactured using the 150-nm silicon on insulator(SOI)process.The ramped voltage stress and time to breakdown capability of the gate oxide are researched.No early failure is observed for both wafers the first time the voltage is ramped up.However,a time dependent dielectric breakdown(TDDB)test shows more obvious evidence that the gate oxide quality is weakened by the STI indium implantation.Meanwhile,the device characteristics are compared,and the difference between two devices is consistent with the equivalent oxide thickness(EOT)gap.
基金supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201205)the National Natural Science Foundation of China(Grant No.61106103)
文摘we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose （TID） responses in the STI oxide. A radiation enhanced drain induced barrier lower （DIBL） effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.
基金Supported by National Science Foundation for Yong Scholars of China,No.81101067
文摘Spontaneous rupture of hepatocellular carcinoma(HCC) is a life-threatening complication and its prognosis is significantly poor because of the high recurrence rate after initial hepatectomy. Resection of isolated extrahepatic metastasis of HCC has been advocated to obtain a possibility of long-term survival. However, it is a challenge for clinicians to detect implantation metastasis of spontaneously ruptured HCC. Accurate re-staging plays the most important role in making a decision on isolated metastasis resection. 18F-fluorodeoxyglucose(18F-FDG) positron emission tomography/computed tomography(PET/CT) is useful in detecting intraabdominal implantation metastasis from a variety of malignancies and shows superior accuracy to conventional imaging modalities in determining the location of metastasis. We present one patient with a new isolated pelvic implantation metastasis detected by 18F-FDG PET/CT and pathologically confirmed by PET/CT-guided percutaneous biopsy, who had a history of resection of spontaneously ruptured HCC two years ago. The patient's condition was stable at the 6-mo follow-up after resection of the isolated pelvic metastasis.
