Lattice-matched lnGaAs（P） photovoltaic devices were grown on lnP substrates by metal-organic chem- ical vapor deposition. InGaAsP/InGaAs （ 1.07/0.74 eV） dual-junction （D J） solar cells were fabricated and charac...Lattice-matched lnGaAs（P） photovoltaic devices were grown on lnP substrates by metal-organic chem- ical vapor deposition. InGaAsP/InGaAs （ 1.07/0.74 eV） dual-junction （D J） solar cells were fabricated and charac- terized by quantum efficiency and I-V measurements. The open circuit voltage, short circuit current density, fill factor, and efficiency of lnGaAsP/lnGaAs DJ solar cell are 0.977 V, 10.2 mA/cm2, 80.8%, and 8.94%, respectively, under one sun illumination of the AM 1.5D spectrum. For the lnGaAsP/lnGaAs DJ solar cell, with increasing con- centration, the conversion efficiency first increases steadily and reaches 13% around 280 suns, and finally decreases due to the drop in fill factor at higher concentration ratios. These experimental results demonstrate the promising prospect of GaInP/GaAs/lnGaAsP/lnGaAs four-junction solar cells.展开更多
基金supported by the National Natural Science Foundation of China(No.61376065)
文摘Lattice-matched lnGaAs（P） photovoltaic devices were grown on lnP substrates by metal-organic chem- ical vapor deposition. InGaAsP/InGaAs （ 1.07/0.74 eV） dual-junction （D J） solar cells were fabricated and charac- terized by quantum efficiency and I-V measurements. The open circuit voltage, short circuit current density, fill factor, and efficiency of lnGaAsP/lnGaAs DJ solar cell are 0.977 V, 10.2 mA/cm2, 80.8%, and 8.94%, respectively, under one sun illumination of the AM 1.5D spectrum. For the lnGaAsP/lnGaAs DJ solar cell, with increasing con- centration, the conversion efficiency first increases steadily and reaches 13% around 280 suns, and finally decreases due to the drop in fill factor at higher concentration ratios. These experimental results demonstrate the promising prospect of GaInP/GaAs/lnGaAsP/lnGaAs four-junction solar cells.
