A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis

A new comprehensive empirical large signal model for 4H-SiC MESFETs is proposed. An enhanced drain current model,along with an improved charge conservation capacitance model,is presented by the improvement of the channel length modulation and the hyperbolic tangent function coefficient based on the Materka model. The Levenberg-Marquardt method is used to optimize the parameter extraction. A comparison of simulation resuits with experimental data is made,and good agreements of I-V curves, Pout （output power）, PAE （power added efficiency） ,and gain at the bias of Vos = 20V, Ips = 80mA as well as the operational frequency of 1.8GHz are obtained.

Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers

Large-signal modulation capability, as an important performance indicator, is directly related to the high-speed optical communication technology involved. We experimentally and theoretically investigate the large-signal modulation characteristics of the simultaneous ground-state （GS） and the excited-state （ES） lasing in InAs/OaAs quantum dot laser diodes. The large-signal modulation capability of total light intensity in the transition regime from OS lasing to two-state lasing is unchanged as the bias-current increases. However, GS and ES large-signal eye diagrams show obvious variations during the transition. Relaxation oscillations and large-signal eye diagrams for OS, ES, and total light intensities are numerically simulated and analyzed in detail by using a rate-equation model. The -ndings show that a complementary relationship between the light intensities for OS and ES lasing exists in both the transition regime and the two-state lasing regime, leading to a much smaller overshooting power and a shorter settling time for the total light intensity. Therefore, the eye diagrams of GS or ES lasing are diffuse whereas those of total light intensity are constant as the bias-current increases in the transition regime.

A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs

This paper reports that a 4H-SiC MESFET （Metal Semiconductor Field Effect Transistor） large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE （power added efficiency）, output power and gain.

A Verilog-A large signal model for InP DHBT including thermal effects

A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previous model in which the double heterojunction effect,current blocking effect and high current effect in current expression are considered,the effect of bandgap narrowing with temperature has been considered in transport current while a formula for model parameters as a function of temperature has been developed.This model is implemented by Verilog-A and embedded in ADS.The proposed model is verified with DC and large signal measurements.

Planar Schottky varactor diode and corresponding large signal model for millimeterwave applications

A GaAs-based planar Schottky varactor diode （PSVD） is successfully developed to meet the demand of millimeter-wave harmonic generation. Based on the measured S-parameter, I-V and C-V characteristics, an accurate and reliable extraction method of the millimeter-wave large signal equivalent circuit model of the PSVD is proposed and used to extract the model parameters of two PSVDs with Schottky contact areas of 160 μm2 and 49 μm2, respectively. The simulated S-parameter, I-V and C-V performances of the proposed physics-based model are in good agreement with the measured one over the frequency range from 0.1 to 40 GHz for wide operation bias range from -10 to 0.6 V for these two PSVDs. The proposed equivalent large signal circuit model of this PSVD has been proven to be reliable and can potentially be used to design microwave circuits.

Large signal RF power transmission characterization of InGaP HBT for RF power amplifiers

The large signal RF power transmission characteristics of an advanced InGaP HBT in an RF power amplifier are investigated and analyzed experimentally. The realistic RF powers reflected by the transistor, transmitted from the transistor and reflected by the load are investigated at small signal and large signal levels. The RF power multiple frequency components at the input and output ports are investigated at small signal and large signal levels, including their effects on RF power gain compression and nonlinearity. The results show that the RF power reflections are different between the output and input ports. At the input port the reflected power is not always proportional to input power level; at large power levels the reflected power becomes more serious than that at small signal levels, and there is a knee point at large power levels. The results also show the effects of the power multiple frequency components on RF amplification.

Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

In wireless mobile communications and wireless local area networks （WLAN）, advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs.

An improved temperature-dependent large signal model of microwave GaN HEMTs

Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability de- sign and assessment. In this paper, an improved temperature-dependent model for large signal equivalent circuit modeling of GaN HEMTs is proposed. To accurately describe the thermal effects, a modified nonlinear thermal sub-circuit which is related not only to power dissipation, but also ambient temperature is used to calculate the variations of channel temperature of the device; the temperature-dependent parasitic and intrinsic elements are also taken into account in this model. The parameters of the thermal sub-circuit are extracted by using the numerical finite element method. The results show that better performance can be achieved by using the proposed large signal model in the range of-55 to 125℃ compared with the conventional model with a linear thermal sub-circuit.

The microwave large signal load line of an InGaP HBT

The microwave dynamic load line characteristics of an advanced InGaP HBT are investigated experimentally and analyzed at small signal level and at large signal level for microwave power amplification. Investigation results show that the dynamic load curves are not always like an elliptic curve, and the current extreme points do not locate at voltage extreme points. The dynamic load curve current extreme point lines sit at the small signal load line up to the P-3dB point, and the lines show a constant slope from a small signal up to the saturation power point. A method to calculate the realistically delivered power to load is presented which fits the test result well.

The influences of large earthquake signals on the recovery of surface waves from ambient noise cross-correlation functions

Ambient noise tomography(ANT)has been widely used to image crust and upmost mantle structures.ANT assumes that sources of ambient noise are diffuse and evenly distributed in space and the energy of different modes is equipartitioned.At present,the sources of the primary and the secondary microseisms are well studied,but there are only a few on the studies of long-period ambient noise sources.In this study,we study the effects of large earthquake signals on the recovery of surface waves from seismic ambient noise data recorded by seismic stations from the US permanent networks and Global Seismographic Network(GSN).Our results show that large earthquake signals play an important role on the recovery of long-period surface waves from ambient noise cross-correlation functions.Our results are consistent with previous studies that suggest the contribution of earthquake signals to the recovery of surface waves from cross-correlations of ambient noise is dominant at periods larger than 20–40 s.

Unambiguously Resolving the Potential Neutrino Magnetic Moment Signal at Large Liquid Scintillator Detectors

Non-vanishing electromagnetic properties of neutrinos have been predicted by many theories beyond the Standard Model, and an enhanced neutrino magnetic moment can have profound implications for fundamental physics. The XENON1T experiment recently detected an excess of electron recoil events in the 1–7 keV energy range, which can be compatible with solar neutrino magnetic moment interaction at a most probable value of μ_(v) = 2.1 × 10^(-11)μ_(B).However, tritium backgrounds or solar axion interaction in this energy window are equally plausible causes.Upcoming multi-tonne noble liquid detectors will test these scenarios more in depth, but will continue to face similar ambiguity. We report a unique capability of future large liquid scintillator detectors to help resolve the potential neutrino magnetic moment scenario. With O(100) kton·year exposure of liquid scintillator to solar neutrinos, a sensitivity of μ_(v) < 10^(-11)μ_(B) can be reached at an energy threshold greater than 40 keV, where no tritium or solar axion events but only neutrino magnetic moment signal is still present.

A Low-Power-Consumption 9bit 10MS/s Pipeline ADC for CMOS Image Sensors

A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifiers with gain boost structure, and biasing all the cells with the same voltage bias source, which requires careful layout design and large capacitors. In addition,capacitor array DAC is also applied to reduce power consumption,and low threshold voltage MOS transistors are used to achieve a large signal processing range. The ADC was implemented in a 0.18μm 4M-1 P CMOS process,and the experimental results indicate that it consumes only 7mW, which is much less than general pipeline ADCs. The ADC was used in a 300000 pixels CMOS image sensor.

Advanced SPICE-Modeling of 4H-SiC MESFETs

A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint＇s own model （TOM）. The model, which is single piece and continuously differentiable, is verified by measured direct current （DC） I-V curves and scattering parameters （up to 20 GHz）.

Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor

The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach.In the case of faster saturation as well as extremely high transit frequency,the graphene field effect transistor shows outstanding performance.From the transfer curve,it is observed that there is a positive shift of Dirac point from the voltage of 0.15 V to 0.35 V because of reducing channel length from 440 nm to 20 nm and this curve depicts that graphene shows ambipolar behavior.Besides,it is found that because of widening channel the drain current increases and the maximum current is found approximately 2.4 mA and 6 mA for channel width 2μm and 5μm respectively.Furthermore,an approximate symmetrical capacitance-voltage(C-V)characteristic of the graphene field effect transistor is obtained and the capacitance reduces when the channel length decreases but the capacitance can be increased by raising the channel width.In addition,a high transconductance,that demands high-speed radio frequency(RF)applications,of 6.4 mS at channel length 20 nm and 4.45 mS at channel width 5μm along with a high transit frequency of 3.95 THz have been found that demands high-speed radio frequency applications.

Large-signal modeling method for power FETs and diodes

Under a large signal drive level,a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes.A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices.The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

Synthesized acoustic signal characteristics of net-cage-cultured Large yellow croaker,Pseudosciaena crocea

This study performs the quantitative analysis and comparison to acoustic signal characteristics of Large yellow croaker （Pseudosciaena crocea） at two different ages. The sounds were recorded from the fishes in a net-cage. Two exponential oscillation functions are built to fit the acoustic signal of the fishes. The signal characteristic of the oscillation frequency and attenuation coefficient was described quantitatively. Simulation curves of the function could fit well acoustic signals. Both the average oscillation frequency and attenuation coefficient of the fitted signals from the 13-15-month-old fishes are lower than those from the 7-8-month-old fishes. The results suggest that the oscillation frdquency and attenuation coefficient of the acoustic signal flmction may be relevant to the physical process of sound production and age characteristics of Large yellow croaker. This study may be valuable for the acoustic application to the artificial culture of the species.

A Simple Configuration for 40 Gbit/s CSRZ Signal Generation with Electrical Band-Limiting to Achieve Large Dispersion Tolerance

We present a novel configuration for carrier suppressed return-to-zero (CSRZ) signal generation, which only requires a single stage Mach-Zehnder (MZ) modulator in conjunction with an electrical mixer. Electrical band-limiting is also introduced to increase dispersion tolerance without causing additional penalty due to nonlinear effects in long haul dense wavelength division multiplexed (DWDM) CSRZ systems using conventional launch power levels.

AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

We report the DC and RF characteristics of AlN/GaN high electron mobility transistors（HEMTs） with the gate length of 100 nm on sapphire substrates. The device exhibits a maximum drain current density of 1.29 A/mm and a peak transconductance of 440 m S/mm. A current gain cutoff frequency and a maximum oscillation frequency of 119 GHz and 155 GHz have been obtained, respectively. Furthermore, the large signal load pull characteristics of the AlN/GaN HEMTs were measured at 29 GHz. An output power density of 429 m W/mm has been demonstrated at a drain bias of 10 V. To the authors＇ best knowledge, this is the earliest demonstration of power density at the Ka band for Al N/Ga N HEMTs in the domestic, and also a high frequency of load-pull measurements for Al N/Ga N HEMTs.