Precision photonic integration for future large-scale photonic integrated circuits

Since the proposal of the concept of photonic integratedcircuits (PICs), tremendous progress has been made. In2005, Infinera Corp. rolled out the first commercial PICs, inwhich hundreds of optical functions were integrated onto asmall form factor chip for wavelength division multiplexing(WDM) systems[1], then a monolithically integrated 10 ×10 Gb/s WDM chip has been demonstrated, the channelnumber is ten[2]. Like ICs, large-scale PICs (LS-PICs) will besure to be pursued. However, there are still some generalchallenges associated with LS-PICs. The challenges for III–V(mainly InP) PICs is the semiconductor process, which is notmature for LS-PICs. Up to now, the channel number in commercialIII–V WDM PICs by Infinera is still about ten or less.For silicon photonics, the challenge is the silicon based lightsource. The low cost and mature solution for silicon lasers isstill unavailable and only 4 × 25 Gb/s PICs are deployed byIntel Corp. after 18-year R&D investment. Thus it is still unavailablefor practical LS-PICs in the present times.

Pixelated non-volatile programmable photonic integrated circuits with 20-level intermediate states

Multi-level programmable photonic integrated circuits(PICs)and optical metasurfaces have gained widespread attention in many fields,such as neuromorphic photonics,opticalcommunications,and quantum information.In this paper,we propose pixelated programmable Si_(3)N_(4)PICs with record-high 20-level intermediate states at 785 nm wavelength.Such flexibility in phase or amplitude modulation is achieved by a programmable Sb_(2)S_(3)matrix,the footprint of whose elements can be as small as 1.2μm,limited only by the optical diffraction limit of anin-house developed pulsed laser writing system.We believe our work lays the foundation for laser-writing ultra-high-level(20 levels and even more)programmable photonic systems and metasurfaces based on phase change materials,which could catalyze diverse applications such as programmable neuromorphic photonics,biosensing,optical computing,photonic quantum computing,and reconfigurable metasurfaces.

Hybrid material integration in silicon photonic integrated circuits

Hybrid integration ofⅢ-Ⅴand ferroelectric materials is being broadly adopted to enhance functionalities in silicon photonic integrated circuits(PICs).Bonding and transfer printing have been the popular approaches for integration of III–V gain media with silicon PICs.Similar approaches are also being considered for ferroelectrics to enable larger RF modulation bandwidths,higher linearity,lower optical loss integrated optical modulators on chip.In this paper,we review existing integration strategies ofⅢ-Ⅴmaterials and present a route towards hybrid integration of bothⅢ-Ⅴand ferroelectrics on the same chip.We show that adiabatic transformation of the optical mode between hybrid ferroelectric and silicon sections enables efficient transfer of optical modal energies for maximum overlap of the optical mode with the ferroelectric media,similar to approaches adopted to maximize optical overlap with the gain section,thereby reducing lasing thresholds for hybridⅢ-Ⅴintegration with silicon PICs.Preliminary designs are presented to enable a foundry compatible hybrid integration route of diverse functionalities on silicon PICs.

Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics

Integrated circuit(IC)industry has fully considered the fact that the Moore’s Law is slowing down or ending.Alternative solutions are highly and urgently desired to break the physical size limits in the More-than-Moore era.Integrated silicon photonics technology exhibits distinguished potential to achieve faster operation speed,less power dissipation,and lower cost in IC industry,because their COMS compatibility,fast response,and high monolithic integration capability.Particularly,compared with other on-chip resonators(e.g.microrings,2D photonic crystal cavities)silicon-on-insulator(SOI)-based photonic crystal nanobeam cavity(PCNC)has emerged as a promising platform for on-chip integration,due to their attractive properties of ultra-high Q/V,ultra-compact footprints and convenient integration with silicon bus-waveguides.In this paper,we present a comprehensive review on recent progress of on-chip PCNC devices for lasing,modulation,switching/filting and label-free sensing,etc.

High-intensity spatial-mode steerable frequency up-converter toward on-chip integration

Integrated photonic devices are essential for on-chip optical communication,optical-electronic systems,and quantum information sciences.To develop a high-fidelity interface between photonics in various frequency domains without disturbing their quantum properties,nonlinear frequency conversion,typically steered with the quadratic(χ2)process,should be considered.Furthermore,another degree of freedom in steering the spatial modes during theχ2 process,with unprecedent mode intensity is proposed here by modulating the lithium niobate(LN)waveguide-based inter-mode quasi-phasematching conditions with both temperature and wavelength parameters.Under high incident light intensities(25 and 27.8 dBm for the pump and the signal lights,respectively),mode conversion at the sum-frequency wavelength with sufficient high output power(−7–8 dBm)among the TM01,TM10,and TM00 modes is realized automatically with characterized broad temperature(ΔT≥8°C)and wavelength windows(Δλ≥1 nm),avoiding the previous efforts in carefully preparing the signal or pump modes.The results prove that high-intensity spatial modes can be prepared at arbitrary transparent wavelength of theχ2 media toward on-chip integration,which facilitates the development of chip-based communication and quantum information systems because spatial correlations can be applied to generate hyperentangled states and provide additional robustness in quantum error correction with the extended Hilbert space.

An advanced Ⅲ-Ⅴ-on-silicon photonic integration platform

In many application scenarios,silicon(Si)photonics favors the integration of Ⅲ-Ⅴ gain material onto Si substrate to real-ize the on-chip light source.In addition to the current popular integration approaches of Ⅲ-Ⅴ-on-Si wafer bonding or dir-ect heteroepitaxial growth,a newly emerged promising solution of epitaxial regrowth on bonded substrate has attracted a lot of interests.High-quality Ⅲ-Ⅴ material realization and successful laser demonstrations show its great potential to be a promising integration platform for low-cost,high-integration density and highly scalable active-passive photonic integra-tion on Si.This paper reviews recent research work on this regrowth on bonded template platform including template de-velopments,regrown material characterizations and laser demonstrations.The potential advantages,opportunities and challenges of this approach are discussed.

Avalanche photodiodes on silicon photonics

Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or III-V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths.Herein,the last advances of monolithic and hetero-geneous avalanche photodiodes on silicon are reviewed,including different device structures and semiconductor systems.

Videometric research on deformation measurement of large-scale wind turbine blades

Utilization of wind energy is a promising way to generate power,and wind turbine blades play a key role in collecting the wind energy effectively.This paper attempts to measure the deformation parameter of wind turbine blades in mechanics experiments using a videometric method. In view that the blades experience small buckling deformation and large integral deformation simultaneously, we proposed a parallel network measurement(PNM) method including the key techniques such as camera network construction,camera calibration,distortion correction,the semi-automatic high-precision extraction of targets,coordinate systems unification,and bundle adjustment,etc. The relatively convenient construction method of the measuring system can provide an abundant measuring content,a wide measuring range and post processing.The experimental results show that the accuracy of the integral deformation measurement is higher than 0.5 mm and that of the buckling deformation measurement higher than 0.1mm.

Science Letters:The Moore’s Law for photonic integrated circuits

We formulate a “Moore’s law” for photonic integrated circuits (PICs) and their spatial integration density using two methods. One is decomposing the integrated photonics devices of diverse types into equivalent basic elements, which makes a comparison with the generic elements of electronic integrated circuits more meaningful. The other is making a complex compo- nent equivalent to a series of basic elements of the same functionality, which is used to calculate the integration density for func- tional components realized with different structures. The results serve as a benchmark of the evolution of PICs and we can con- clude that the density of integration measured in this way roughly increases by a factor of 2 per year. The prospects for a continued increase of spatial integration density are discussed.

High performance integrated photonic circuit based on inverse design method

The basic indexes of all-optical integrated photonic circuits include high-density integration,ultrafast response and ultralow energy consumption.Traditional methods mainly adopt conventional micro/nano-structures.The overall size of the circuit is large,usually reaches hundreds of microns.Besides,it is difficult to balance the ultrafast response and ultra-low energy consumption problem,and the crosstalk between two traditional devices is difficult to overcome.Here,we propose and experimentally demonstrate an approach based on inverse design method to realize a high-density,ultrafast and ultra-low energy consumption integrated photonic circuit with two all-optical switches controlling the input states of an all-optical XOR logic gate.The feature size of the whole circuit is only 2.5μm×7μm,and that of a single device is 2μm×2μm.The distance between two adjacent devices is as small as 1.5μm,within wavelength magnitude scale.Theoretical response time of the circuit is 150 fs,and the threshold energy is within 10 fJ/bit.We have also considered the crosstalk problem.The circuit also realizes a function of identifying two-digit logic signal results.Our work provides a new idea for the design of ultrafast,ultra-low energy consumption all-optical devices and the implementation of high-density photonic integrated circuits.

Photonic integrated neuro-synaptic core for convolutional spiking neural network

Neuromorphic photonic computing has emerged as a competitive computing paradigm to overcome the bottlenecks of the von-Neumann architecture.Linear weighting and nonlinear spike activation are two fundamental functions of a photonic spiking neural network(PSNN).However,they are separately implemented with different photonic materials and devices,hindering the large-scale integration of PSNN.Here,we propose,fabricate and experimentally demonstrate a photonic neuro-synaptic chip enabling the simultaneous implementation of linear weighting and nonlinear spike activation based on a distributed feedback(DFB)laser with a saturable absorber(DFB-SA).A prototypical system is experimentally constructed to demonstrate the parallel weighted function and nonlinear spike activation.Furthermore,a fourchannel DFB-SA laser array is fabricated for realizing matrix convolution of a spiking convolutional neural network,achieving a recognition accuracy of 87%for the MNIST dataset.The fabricated neuro-synaptic chip offers a fundamental building block to construct the large-scale integrated PSNN chip.

Silicon photonics for telecom and data‐com applications

In recent decades,silicon photonics has attracted much attention in telecom and data-com areas.Constituted of high refractive-index contrast waveguides on silicon-on-insulator(SOI),a variety of integrated photonic passive and active devices have been implemented supported by excellent optical properties of silicon in the mid-infrared spectrum.The main advantage of the silicon photonics is the ability to use complementary metal oxide semiconductor(CMOS)process-compatible fabrication technologies,resulting in high-volume production at low cost.On the other hand,explosively growing traffic in the telecom,data center and high-performance computer demands the data flow to have high speed,wide bandwidth,low cost,and high energy-efficiency,as well as the photonics and electronics to be integrated for ultra-fast data transfer in networks.In practical applications,silicon photonics started with optical interconnect transceivers in the data-com first,and has been now extended to innovative applications such as multi-port optical switches in the telecom network node and integrated optical phased arrays(OPAs)in light detection and ranging(LiDAR).This paper overviews the progresses of silicon photonics from four points reflecting the recent advances mentioned above.CMOS-based silicon photonic platform technologies,applications to optical transceiver in the data-com network,applications to multi-port optical switches in the telecom network and applications to OPA in LiDAR system.

The analysis of the integral gated mode single photon detector

This paper critically analyses and simulates the circuit configuration of the integral gated mode single photon detector which is proposed for eliminating the transient spikes problem of conventional gated mode single photon detector. The relationship between the values of the circuit elements and the effect of transient spikes cancellation has been obtained. With particular emphasis, the bias voltage of the avalanche photodiode and the output signal voltage of the integrator have been calculated. The obtained analysis results indicate that the output signal voltage of the integrator only relates to the total quantity of electricity of the avalanche charges by choosing the correct values of the circuit elements and integral time interval. These results can be used to optimize the performance of single photon detectors and provide guides for the design of single photon detectors.

Butt-joint regrowth method by MOCVD for integration of evanescent wave coupled photodetector and multi-quantum well semiconductor optical amplifier

We have realized integration of evanescent wave coupled photodetector(ECPD)and multi-quantum well(MQW)semiconductor optical amplifier(SOA)on MOCVD platform by investigating butt-joint regrowth method of thick InP/InGaAsP waveguides to deep etched SOA mesas.The combination of inductively coupled plasma etching and wet chemical etching technique has been studied to define the final mesa shape before regrowth.By comparing the etching profiles of different non-selective etchants,we have obtained a controllable non-reentrant mesa shape with smooth sidewall by applying one step 2 HBr:2 H_(3)PO_(4):K_(2)Cr_(2)O_(7)wet etching.A high growth temperature of 680℃is found helpful to enhance planar regrowth.By comparing the growth morphologies and simulating optical transmission along different directions,we determined that waveguides should travel across the regrowth interface along the[110]direction.The relation between growth rate and mask design has been extensively studied and the result can provide an important guidance for future mask design and vertical alignment between the active and passive cores.ECPD-SOA integrated device has been successfully achieved by this method without further regrowth steps and provided a responsivity of 7.8 A/W.The butt-joint interface insertion loss is estimated to be 1.05 dB/interface.

Digital synthesis of programmable photonic integrated circuits

Programmable photonic waveguide meshes can be programmed into many different circuit topologies and thereby provide a variety of functions.Due to the complexity of the signal routing in a general mesh,a particular synthesis algorithm often only accounts for a specific function with a specific cell configuration.In this paper,we try to synthesize the programmable waveguide mesh to support multiple configurations with a more general digital signal processing platform.To show the feasibility of this technique,photonic waveguide meshes in different configurations(square,triangular and hexagonal meshes)are designed to realize optical signal interleaving with arbitrary duty cycles.The digital signal processing(DSP)approach offers an effective pathway for the establishment of a general design platform for the software-defined programmable photonic integrated circuits.The use of well-developed DSP techniques and algorithms establishes a link between optical and electrical signals and makes it convenient to realize the computer-aided design of optics–electronics hybrid systems.

Recommendations for Large-scale Farmland Operation in Hilly Areas Based on Long Tail Theory

At the background of urban and rural integration,this paper analyzed and discussed factors restricting large-scale farmland operation in China's hilly areas from the qualitative perspective. It recognized large-scale farmland operation on the basis of the long tail theory. Finally,it came up with recommendations for developing large-scale farmland operation in hilly areas.

Optimization of a Si-SiO2 Waveguide Coupler for Photonic Integrated Circuits

In this paper, we demonstrated a compact Si-SiO2 waveguide coupler with a footprint of only 2 μm × 3 μm by topology optimization in the communication wavelength. The transmission was increased from 30% to 100%, much higher than other methods. Besides, the optimized structure did not incorporate other dielectric materials, facilitating fabrications and applications.

A Review of the Building Blocks of Silicon Photonics:From Fabrication Perspective

Silicon photonics is a disruptive semiconductor technology that taps into the extraordinary properties of light while taking full advantage of the already matured CMOS processes developed in the semiconductor industry.However,just like electronic industry in the 1970s,currently,silicon photonics is in its infancy.The fundamental building blocks of silicon photonics such as waveguides,lasers,modulators,etc.are yet to be fully optimized for low-cost-mass-manufacturing.In this paper,the current state-of-the-art related to developing and optimizing these aforementioned key components will be presented.The challenges of process integration regarding Silicon photonics will also be discussed.

An inversely designed integrated spectrometer with reconfigurable performance and ultra-low power consumption

Despite the pressing demand for integrated spectrometers,a solution that deliver high-performance while being practically operated is still missing.Furthermore,current integrated spectrometers lack reconfigurability in their performance,which is highly desirable for dynamic working scenarios.This study presents a viable solution by demonstrating a userfriendly,reconfigurable spectrometer on silicon.At the core of this innovative spectrometer is a programmable photonic circuit capable of exhibiting diverse spectral responses,which can be significantly adjusted using on-chip phase shifters.The distinguishing feature of our spectrometer lies in its inverse design approach,facilitating effortless control and efficient manipulation of the programmable circuit.By eliminating the need for intricate configuration,our design reduces power consumption and mitigates control complexity.Additionally,our reconfigurable spectrometer offers two distinct operating conditions.In the Ultra-High-Performance mode,it is activated by multiple phase-shifters and achieves exceptional spectral resolution in the picometer scale while maintaining broad bandwidth.On the other hand,the Ease-of-Use mode further simplifies the control logic and reduces power consumption by actuating a single-phase shifter.Although this mode provides a slightly degraded spectral resolution of approximately 0.3 nm,it prioritizes ease of use and is wellsuited for applications where ultra-fine spectral reconstruction is not a primary requirement.

Ultra-Low Linewidth Frequency Stabilized Integrated Lasers: A New Frontier in Integrated Photonics

With the advancement of photonic integration technology,ultra-low linewidth frequency-stabilized lasers have demonstrated significant potential in precision measurement,quantum communication,atomic clocks,etc.This review summarizes the latest developments in integrated photonics for achieving ultra-low linewidth lasers,particularly breakthroughs made by integrating Brillouin lasers.We discuss the design principles,manufacturing processes,performance characteristics,and potential value of these lasers in various applications.