Purification of copper foils driven by single crystallization

High-purity copper(Cu) with excellent thermal and electrical conductivity, is crucial in modern technological applications, including heat exchangers, integrated circuits, and superconducting magnets. The current purification process is mainly based on the zone/electrolytic refining or anion exchange, however, which excessively relies on specific integrated equipment with ultra-high vacuum or chemical solution environment, and is also bothered by external contaminants and energy consumption. Here we report a simple approach to purify the Cu foils from 99.9%(3N) to 99.99%(4N) by a temperature-gradient thermal annealing technique, accompanied by the kinetic evolution of single crystallization of Cu.The success of purification mainly relies on(i) the segregation of elements with low effective distribution coefficient driven by grain-boundary movements and(ii) the high-temperature evaporation of elements with high saturated vapor pressure.The purified Cu foils display higher flexibility(elongation of 70%) and electrical conductivity(104% IACS) than that of the original commercial rolled Cu foils(elongation of 10%, electrical conductivity of ~ 100% IACS). Our results provide an effective strategy to optimize the as-produced metal medium, and therefore will facilitate the potential applications of Cu foils in precision electronic products and high-frequency printed circuit boards.

Oxidation behavior of 4774DD1 Ni-based single-crystal superalloy at 980℃ in air

The oxidation behavior of a novel Ni-based single-crystal 4774DD1 superalloy for industrial gas turbine applications was investigated by the isothermal oxidation at 980℃ and discontinuous oxidation weight gain methods.The phase constitution and morphology of surface oxides and the characteristics of the crosssection oxide film were analyzed by XRD,SEM and EDS.Results show that the oxidation kinetics of the 4774DD1 superalloy follows the cubic law,indicating its weak oxidation resistance at this temperature.As the oxidation time increases,the composition of the oxide film evolves as following:One layer consisting of a bottom Al_(2)O_(3)sublayer and an upper(Al_(2)O_(3)+NiO)mixture sublayer after oxidized for 25 h.Then,two layers composed of an outermost small NiO discontinuous grain layer and an internal layer for 75 h.This internal layer is consisted of the bottom Al_(2)O_(3)sublayer,an intermediate narrow CrTaO_(4)sublayer,and an upper(Al_(2)O_(3)+NiO)mixture sublayer.Also two layers comprising an outermost relative continuous NiO layer with large grain size and an internal layer as the oxidation time increases to 125 h.This internal layer is composed of the upper(Al_(2)O_(3)+NiO)mixture sublayer,an intermediate continuous(CrTaO_(4)+NiWO_(4))mixture sublayer,and a bottom Al_(2)O_(3)sublayer.Finally,three layers consisting of an outermost(NiAl2O_(4)+NiCr2O_(4))mixture layer,an intermediate(CrTaO_(4)+NiWO_(4))mixture layer,and a bottom Al_(2)O_(3)layer for 200 h.

Localization effect in single crystal of RuAs_(2)

We report the magnetotransport and thermal properties of RuAs_(2) single crystal.RuAs_(2) exhibits semiconductor behavior and localization effect.The crossover from normal state to diffusive transport in the weak localization(WL)state and then to variable range hopping(VRH)transport in the strong localization state has been observed.The transitions can be reflected in the measurement of resistivity and Seebeck coefficient.Negative magnetoresistance(NMR)emerges with the appearance of localization effect and is gradually suppressed in high magnetic field.The temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to VRH.The measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization effect.Our findings show that RuAs_(2) is a suitable platform to study the localized state.

Centimeter-sized Cs_(3)Cu_(2)I_(5)single crystals grown by oleic acid assisted inverse temperature crystallization strategy and their films for high-quality X-ray imaging

Low-dimensional halide perovskites have become the most promising candidates for X-ray imaging,yet the issues of the poor chemical stability of hybrid halide perovskite,the high poisonousness of lead halides and the relatively low detectivity of the lead-free halide perovskites which seriously restrain its commercialization.Here,we developed a solution inverse temperature crystal growth(ITCG)method to bring-up high quality Cs_(3)Cu_(2)I_(5)crystals with large size of centimeter order,in which the oleic acid(OA)is introduced as an antioxidative ligand to inhibit the oxidation of cuprous ions effieiently,as well as to decelerate the crystallization rate remarkalby.Based on these fine crystals,the vapor deposition technique is empolyed to prepare high quality Cs_(3)Cu_(2)I_(5)films for efficient X-ray imaging.Smooth surface morphology,high light yields and short decay time endow the Cs_(3)Cu_(2)I_(5)films with strong radioluminescence,high resolution(12 lp/mm),low detection limits(53 nGyair/s)and desirable stability.Subsequently,the Cs_(3)Cu_(2)I_(5)films have been applied to the practical radiography which exhibit superior X-ray imaging performance.Our work provides a paradigm to fabricate nonpoisonous and chemically stable inorganic halide perovskite for X-ray imaging.

Understand anisotropy dependence of damage evolution and material removal during nanoscratch of MgF_(2) single crystals

To understand the anisotropy dependence of the damage evolution and material removal during the machining process of MgF_(2) single crystals,nanoscratch tests of MgF_(2) single crystals with different crystal planes and directions were systematically performed,and surface morphologies of the scratched grooves under different conditions were analyzed.The experimental results indicated that anisotropy considerably affected the damage evolution in the machining process of MgF_(2) single crystals.A stress field model induced by the scratch was developed by considering the anisotropy,which indicated that during the loading process,median cracks induced by the tensile stress initiated and propagated at the front of the indenter.Lateral cracks induced by tensile stress initiated and propagated on the subsurface during the unloading process.In addition,surface radial cracks induced by the tensile stress were easily generated during the unloading process.The stress change led to the deflection of the propagation direction of lateral cracks.Therefore,the lateral cracks propagated to the workpiece surface,resulting in brittle removal in the form of chunk chips.The plastic deformation parameter indicated that the more the slip systems were activated,the more easily the plastic deformation occurred.The cleavage fracture parameter indicated that the cracks propagated along the activated cleavage planes,and the brittle chunk removal was owing to the subsurface cleavage cracks propagating to the crystal surface.Under the same processing parameters,the scratch of the(001)crystal plane along the[100]crystal-orientation was found to be the most conducive to achieving plastic machining of MgF_(2) single crystals.The theoretical results agreed well with the experimental results,which will not only enhance the understanding of the anisotropy dependence of the damage evolution and removal process during the machining of MgF_(2) crystals,but also provide a theoretical foundation for achieving the high-efficiency and low-damage processing of anisotropic single crystals.

Stable yellow light emission from lead-free copper halides single crystals for visible light communication

Yellow light-emitting diodes(LEDs) as soft light have attracted abundant attention in lithography room, museum and art gallery. However, the development of efficient yellow LEDs lags behind green and blue LEDs, and the available perovskites yellow LEDs suffer from the instability. Herein, a pressure-assisted cooling method is proposed to grow lead-free CsCu2I3single crystals, which possess uniform surface morphology and enhanced photoluminescence quantum yield(PLQY) stability, with only 10% PLQY losses after being stored in air after 5000 h.Then, the single crystals used for yellow LEDs without encapsulation exhibit a decent Correlated Color Temperature(CCT) of 4290 K, a Commission Internationale de l’Eclairage(CIE) coordinate of(0.38, 0.41), and an excellent 570-h operating stability under heating temperature of 100°C. Finally, the yellow LEDs facilitate the application in wireless visible light communication(VLC), which show a-3 dB bandwidth of 21.5 MHz and a high achievable data rate of 219.2 Mbps by using orthogonal frequency division multiplexing(OFDM) modulation with adaptive bit loading. The present work not only promotes the development of lead-free single crystals, but also inspires the potential of CsCu2I3in the field of yellow illumination and wireless VLC.

Corrosion behavior of single-and poly-crystalline dual-phase TiAl–Ti3Al alloy in NaCl solution

To clarify the correlation of single-crystalline structure with corrosion performance in high-strength TiAl alloys, electrochemical and surface characterization was performed by comparing Ti–45Al–8Nb dual-phase single crystals with their polycrystalline counterparts in NaCl solution. Polarization curves show a lower corrosion rate and a higher pitting potential of ~280 mV for the dual-phase single crystals. Electrochemical impedance spectroscopy and potentiostatic polarization plots revealed a higher impedance of the charge transfer through the compact passive film. Surface composition analysis indicated a compact film with more content of Nb, as twice as that in the film on the polycrystals.Our results reflect that the dual-phase Ti–45Al–8Nb single crystals possess a higher corrosion resistance in NaCl solution, compared with their polycrystalline counterpart, arising from a more homogeneous microstructure and composition distribution.

Material Removal Characteristics of Single-Crystal 4H-SiC Based on Varied-Load Nanoscratch Tests

Single-crystal silicon carbide(SiC)has been widely applied in the military and civil fields because of its excellent physical and chemical properties.However,as is typical in hard-to-machine materials,the good mechanical properties result in surface defects and subsurface damage during precision or ultraprecision machining.In this study,single-and double-varied-load nanoscratch tests were systematically performed on single-crystal 4H-SiC using a nanoindenter system with a Berkovich indenter.The material removal characteristics and cracks under different planes,indenter directions,normal loading rates,and scratch intervals were analyzed using SEM,FIB,and a 3D profilometer,and the mechanisms of material removal and crack propagation were studied.The results showed that the Si-plane of the single-crystal 4H-SiC and edge forward indenter direction are most suitable for material removal and machining.The normal loading rate had little effect on the scratch depth,but a lower loading rate increased the ductile region and critical depth of transition.Additionally,the crack interaction and fluctuation of the depth-distance curves of the second scratch weakened with an increase in the scratch interval,the status of scratches and chips changed,and the comprehensive effects of the propagation and interaction of the three cracks resulted in material fractures and chip accumulation.The calculated and experimental values of the median crack depth also showed good consistency and relativity.Therefore,this study provides an important reference for the high-efficiency and precision machining of single-crystal SiC to ensure high accuracy and a long service life.

Review of solution growth techniques for 4H-SiC single crystal

Silicon carbide(SiC),a group IV compound and wide-bandgap semiconductor for high-power,high-frequency and high-temperature devices,demonstrates excellent inherent properties for power devices and specialized high-end markets.Solution growth is thermodynamically favorable for producing SiC single crystal ingots with ultra-low dislocation density as the crystallization is driven by the supersaturation of carbon dissolved in Si-metal solvents.Meanwhile,solution growth is conducive to the growth of both N-and P-type SiC,with doping concentrations ranging from 10^(14)to 10^(19)cm^(-3).To date,4-inch 4H-SiC substrates with a thickness of 15 mm produced by solution growth have been unveiled,while substrates of 6 inches and above are still under development.Based on top-seeded solution growth(TSSG),several growth techniques have been developed including solution growth on a concave surface(SGCS),melt-back,accelerated crucible rotation technique(ACRT),two-step growth,and facet growth.Multi-parameters of the solution growth including meniscus,solvent design,flow control,dislocation conversion,facet growth,and structures of graphite components make high-quality single crystal growth possible.In this paper,the solution growth techniques and corresponding parameters involved in SiC bulk growth were reviewed.

A Comparative Investigation of Single Crystal and Polycrystalline Ni-Rich NCMs as Cathodes for Lithium-Ion Batteries

Nickel-rich LiNi_(1-x-y)Co_(x)Mn_(y)O_(2)(NCM,1-x-y≥0.6)is known as a promising cathode material for lithium-ion batteries since its superiority of high voltage and large capacity.However,polycrystalline Ni-rich NCMs suffer from poor cycle stability,limiting its further application.Herein,single crystal and polycrystalline LiNi_(0.84)Co_(0.07)Mn_(0.09)O_(2)cathode materials are compared to figure out the relation of the morphology and the electrochemical storage performance.According to the Li^(+)diffusion coefficient,the lower capacity of single crystal samples is mainly ascribed to the limited Li+diffusion in the large bulk.In situ XRD illustrates that the polycrystalline and single crystal NCMs show a virtually identical manner and magnitude in lattice contraction and expansion during cycling.Also,the electrochemically active surface area(ECSA)measurement is employed in lithium-ion battery study for the first time,and these two cathodes show huge discrepancy in the ECSA after the initial cycle.These results suggest that the single crystal sample exhibits reduced cracking,surface side reaction,and Ni/Li mixing but suffers the lower Li^(+)diffusion kinetics.This work offers a view of how the morphology of Ni-rich NCM effects the electrochemical performance,which is instructive for developing a promising strategy to achieve good rate performance and excellent cycling stability.

Effects of temperature on critical resolved shear stresses of slip and twining in Mg single crystal via experimental and crystal plasticity modeling

Magnesium(Mg)single crystal specimens with three different orientations were prepared and tested from room temperature to 733 K in order to systematically evaluate effects of temperature on the critical resolved shear stress(CRSS)of slips and twinning in Mg single crystals.The duplex non-basal slip took place in the temperature range from 613 to 733 K when the single crystal samples were stretched along the<0110>direction.In contrast,the single basal slip and prismatic slip were mainly activated in the temperature range from RT to 733 K when the tensile directions were inclined at an angle of 45°with the basal and the prismatic plane,respectively.Viscoplastic self-consistent(VPSC)crystal modeling simulations with genetic algorithm code(GA-code)were carried out to obtain the best fitted CRSSs of major deformation modes,such as basal slip,prismatic slip,pyramidalⅡ,{1012}tensile twinning and{1011}compressive twinning when duplex slips accommodated deformation.Additionally,CRSSs of the basal and the prismatic slip were derived using the Schmid factor(SF)criterion when the single slip mainly accommodated deformation.From the CRSSs of major deformation modes obtained by the VPSC simulations and the SF calculations,the CRSSs for basal slip and{1012}tensile twinning were found to show a weak temperature dependence,whereas those for prismatic,slip and{1011}compressive twinning exhibited a strong temperature dependence.From the comparison of previous results,VPSC-GA modeling was proved to be an effective method to obtain the CRSSs of various deformation modes of Mg and its alloys.

Single crystal growth and electronic structure of Rh-doped Sr_(3)Ir_(2)O_(7)

Ruddlesden-Popper iridate Sr_(3)Ir_(2)O_(7)is a spin-orbit coupled Mott insulator.Hole doped Sr_(3)Ir_(2)O_(7)provides an ideal platform to study the exotic quantum phenomena that occur near the metal-insulator transition(MIT)region.Rh substitution of Ir is an effective method to induce hole doping into Sr_(3)Ir_(2)O_(7).However,the highest doping level reported in Sr_(3)(Ir_(1-x)Rh_(x))_(2)O_(7)single crystals was only around 3%,which is far from the MIT region.In this paper,we report the successful growth of single crystals of Sr3(Ir_(1-x)Rh_(x))_(2)O_(7)with a doping level of~9%.The samples have been fully characterized,demonstrating the high quality of the single crystals.Transport measurements have been carried out,confirming the tendency of MIT in these samples.The electronic structure has also been examined by angle-resolved photoemission spectroscopy(ARPES)measurements.Our results establish a platform to investigate the heavily hole doped Sr_(3)Ir_(2)O_(7) compound,which also provide new insights into the MIT with hole doping in this material system.

THE EFFECT STRESS ON THE MAGNETOSTRICTION IN TWIN- FREE SINGLE CRYSTALS Tb_y Dy_(1-y) (Fe_(1-x) T_x)_2 (T=Al,Mn)

Magnetostriction at room temperature under various conditions of compressive prestress and applied fields in Tb yDy 1-y (Fe 1-x T x) 2 (T=Al,Mn) twin-free single crystals were investigated. The substitution of Al or Mn for Fe lowers the magnetostriction un-der ordinary temperature and pressure, but it also decreases the saturation field, which enables these materials with potential benefits for applications.

Inclusions in large diamond single crystals at different temperatures of synthesis

The inclusions in large diamond single crystals have effects on its ultimate performance, which restricts its industrial applications to a great extent. Therefore, it is necessary to study the inclusions systematically. In this paper, large diamond single crystals with different content values of inclusions are synthesized along the(100) surface by the temperature gradient method(TGM) under 5.6 GPa at different temperatures. With the synthetic temperature changing from 1200?C to 1270?C,the shapes of diamonds change from plate to low tower, to high tower, even to steeple. From the microscopic photographs of the diamond samples, it can be observed that with the shapes of the samples changing at different temperatures, the content values of inclusions in diamonds become zero, a little, much and most, correspondingly. Consequently, with the temperature growing from low to high, the content values of inclusions in crystals increase. The origin of inclusions is explained by the difference in growth rate between diamond crystal and its surface. The content values of inclusions in diamond samples are quantitatively calculated by testing the densities of diamond samples. And the composition and inclusion content are analyzed by energy dispersive spectroscopy(EDS) and x-ray diffraction(XRD). From contrasting scanning electron microscopy(SEM) photographs, it can be found that the more the inclusions in diamond, the more imperfect the diamond surface is.

Synthesis and Characterization of AlPO_4-11 and MAPO-11 Single Crystals

The preparation of two types of molecular sieves AlPO 4-11 and MAPO-11 is reported. The particle size of the latter is hundreds of microns, about 10 times larger than that of the former. The XRD, IR and DTA spectra have demonstrated that magnesium has been introduced into the framework of AlPO 4-11. The successful preparation of large single crystal of MAPO-11 will open up a new area for the preparation of large molecular sieves crystals in the future. The large MAPO-11 crystal compound is a promising host for the host-guest assembly of composite materials.

MORPHOLOGY EVOLUTION IN PTFE AS A FUNCTION OF MELT TIME AND TEMPERATURE——Ⅰ.HIGH MOLECULAR WEIGHT SINGLE-AND MULTI-MOLECULE FOLDED CHAIN SINGLE CRYSTALS AND BAND STRUCTURES

The effect of sintering dispersed dispersion and nano-emulsion particles of high molecular weightpolytetrafluoroethylene(PTFE)on a substrate as a function of“melt”time and temperature is described.Folded chain singlecrystals parallel to the substrate and as ribbons on-edge(with double striations),as well as bands,are produced for longersintering times;particle merger and diffusion of individual molecules,crystallizing as folded chain,single(or few)molecule,single crystals when“trapped”on the substrate by cooling occur for shorter sintering times.It is suggested the observedstructures develop with sintering time,in a mesomorphic melt.The structure of the nascent particles is also discussed.

RAFTING PREDICTION CRITERION FOR NICKEL-BASE SINGLE CRYSTALS UNDER MULTIAXIAL STRESSES AND CRYSTALLOGRAPHIC ORIENTATION DEPENDENCE OF CREEP BEHAVIOR

Based on the relief of interfacial energy density by dislocation generation at the gamma - gamma ' interfaces, a rafting prediction criterion has been developed for nickel-base single crystals under multiaxial stresses. The diagrams of rafting have been presented, and confirmed by experimental results. The rafting process have been analyzed quantitatively by the relief of interfacial energy. The criterion has been applied to study the creep behavior. The example of creep life analysis shows that the criterion can be correlated greatly to the crystallographic orientation dependence of creep behavior. (Author abstract) 11 Refs.

Chemical Bonds between Charged Atoms in the Even-Odd Rule and a Limitation to Eight Covalent Bonds per Atom in Centered-Cubic and Single Face-Centered-Cubic Crystals

A crystal is a highly organized arrangement of atoms in a solid, wherein a unit cell is periodically repeated to form the crystal pattern. A unit cell is composed of atoms that are connected to some of their first neighbors by chemical bonds. A recent rule, entitled the even-odd rule, introduced a new way to calculate the number of covalent bonds around an atom. It states that around an uncharged atom, the number of bonds and the number of electrons have the same parity. In the case of a charged atom on the contrary, both numbers have different parity. The aim of the present paper is to challenge the even-odd rule on chemical bonds in well-known crystal structures. According to the rule, atoms are supposed to be bonded exclusively through single-covalent bonds. A distinctive criterion, only applicable to crystals, states that atoms cannot build more than 8 chemical bonds, as opposed to the classical model, where each atom in a crystal is connected to every first neighbor without limitation. Electrical charges can be assigned to specific atoms in order to compensate for extra or missing bonds. More specifically the article considers di-atomic body-centered-cubic, tetra-atomic and dodeca-atomic single-face-centered-cubic crystals. In body-centered crystals, atoms are interconnected by 8 covalent bonds. In face-centered crystal, the unit cell contains 4 or 12 atoms. For di-element crystals, the total number of bonds for both elements is found to be identical. The neutrality of the unit cell is obtained with an opposite charge on the nearest or second-nearest neighbor. To conclude, the even-odd rule is applicable to a wide number of compounds in known cubic structures and the number of chemical bonds per atom is not related to the valence of the elements in the periodic table.

Interplay between polarization rotation and crack propagation in PMN-PT relaxor single crystals

Investigations on the interconnection between the polarization rotation and crack propagation are performed for [110J-oriented 74Pb（Mg1/3Nb2/3）O3- 26PbTiO3 relaxor ferroelectric single crystal under electric loadings along [001] direction. The crystal is of predominantly monoclinic MA phase with scatter dis- tributed rhombohedral （R） phase under a moderate poling field of 900 V/mm in [00l] direction. With magnitude of 800 V/ram, a through thickness crack is initi- ated near the electrode by electric cycling. Static electric loadings is then imposed to the single crystal. As the applied static electric field increases, domain switch- ing in the monoclinic MA phase and phase transition from MA to R phase occur near the crack. The results indicate that the crack features a conducting one. Whether domain switching or phase transition occurs depends on the intensity of the electric field component that is perpendicular to the applied electric field.

The Even-Odd and the Isoelectronicity Rules Applied to Single Covalent Bonds in Ionic, Double-Face-Centered Cubic and Diamond-Like Crystals

Although atom configuration in crystals is precisely known thanks to imaging techniques, there is no experimental way to know the exact location of bonds or charges. Many different representations have been proposed, yet no theory to unify conceptions. The present paper describes methods to derive bonds and charge location in double-face-centered cubic crystals with 4 and 6 atoms per unit cell using two novel rules introduced in earlier works: the even-odd and the isoelectronicity rules. Both of these rules were previously applied to ions, molecules and some solids, and the even-odd rule was also tested on two covalent crystal structures: centered-cubic and single-face-centered cubic crystals. In the present study, the diamond-like structure was subjected to the isoelectronicity rule in order to derive Zinc-blende structures. Rock-salt-like crystals were derived from each other using both rules. These structures represent together more than 230 different crystals. Findings for these structures are threefold: both rules describe a very sure method to obtain valid single covalent-bonded structures;single covalent structures can be used in every case instead of the classical ionic model;covalent bonds and charges positions do not have any relation with the valence number given in the periodic table.