Electrospray,as a liquid source supply system,has been applied to chemical vapour deposition（CVD）.In thermal CVD,the microstructure of the obtained films changes from dense to coarse granular because of the decreasi...Electrospray,as a liquid source supply system,has been applied to chemical vapour deposition（CVD）.In thermal CVD,the microstructure of the obtained films changes from dense to coarse granular because of the decreasing surface temperature during deposition.Using the electrospray laser chemical vapour deposition method,we prepared homogenous alumina coatings.We found that laser irradiation was effective in compensating the surface temperature decrease,and an alpha-alumina coating with dense columnar microstructures was obtained at a deposition rate of 200 μm/h using 200 W Nd：YAG laser irradiation.展开更多
Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10°tilted LaAIO3 （001） substrates by a simple chemical solution deposition method. An open-circu...Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10°tilted LaAIO3 （001） substrates by a simple chemical solution deposition method. An open-circuit voltage with a rise time of about 10 ns and full width at half maximum of about 28 ns is detected when the film surface is irradiated by a 308-nm laser pulse with a duration of 25 ns. Besides, opemcircuit voltage signals are also observed when the film surface is irradiated separately by the laser pulses of 532 nm and 1064 nm. The results indicate that Ca3Co4O9 thin films have a great potential application in the wide range photodetctor from the ultraviolet to near infrared regions.展开更多
Argon ion laser was used as the induced light source and ethane(C2H4) was selected as the precursor gas,in the variety ranges of laser power from 0.5 W to 4.5 W and the pressure of the precursor gas from 225×133....Argon ion laser was used as the induced light source and ethane(C2H4) was selected as the precursor gas,in the variety ranges of laser power from 0.5 W to 4.5 W and the pressure of the precursor gas from 225×133.3 Pa to 680×133.3 Pa,the experiments of laser induced chemical vapor deposition were proceeded for fabrication of micro carbon pillar.In the experiments,the influences of power of laser and pressure of work gas on the diameter and length of micro carbon pillar were investigated,the variety on averaged growth rate of carbon pillar with the laser irradiation time and moving speed of focus was discussed.Based on experiment data,the micro carbon pillar with an aspect ratio of over 500 was built through the method of moving the focus.展开更多
Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low grow...Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.展开更多
A superhard α-Si_3N_4 film,deposited on metal substrate,was produced by laser chemical vapor deposition adopting a kW-level high power CO_2 laser.Most films are composed of fine Si_3N_4 partieles.They join the metal ...A superhard α-Si_3N_4 film,deposited on metal substrate,was produced by laser chemical vapor deposition adopting a kW-level high power CO_2 laser.Most films are composed of fine Si_3N_4 partieles.They join the metal substrate in strong bond.The films have super hardness,excellent resistance to wear and corrosion,etc.Their thickness may be controlled within 5-30 μm.展开更多
文摘Electrospray,as a liquid source supply system,has been applied to chemical vapour deposition（CVD）.In thermal CVD,the microstructure of the obtained films changes from dense to coarse granular because of the decreasing surface temperature during deposition.Using the electrospray laser chemical vapour deposition method,we prepared homogenous alumina coatings.We found that laser irradiation was effective in compensating the surface temperature decrease,and an alpha-alumina coating with dense columnar microstructures was obtained at a deposition rate of 200 μm/h using 200 W Nd：YAG laser irradiation.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 10904030)the Natural Science Foundation of Hebei Province, China (Grant No. A2009000144)
文摘Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10°tilted LaAIO3 （001） substrates by a simple chemical solution deposition method. An open-circuit voltage with a rise time of about 10 ns and full width at half maximum of about 28 ns is detected when the film surface is irradiated by a 308-nm laser pulse with a duration of 25 ns. Besides, opemcircuit voltage signals are also observed when the film surface is irradiated separately by the laser pulses of 532 nm and 1064 nm. The results indicate that Ca3Co4O9 thin films have a great potential application in the wide range photodetctor from the ultraviolet to near infrared regions.
基金Project supported by Scientific Research Fund of Centre South University of Forestry and TechnologyProject supported by Teaching Innovation Fund of Centre South University of Forestry and Technology
文摘Argon ion laser was used as the induced light source and ethane(C2H4) was selected as the precursor gas,in the variety ranges of laser power from 0.5 W to 4.5 W and the pressure of the precursor gas from 225×133.3 Pa to 680×133.3 Pa,the experiments of laser induced chemical vapor deposition were proceeded for fabrication of micro carbon pillar.In the experiments,the influences of power of laser and pressure of work gas on the diameter and length of micro carbon pillar were investigated,the variety on averaged growth rate of carbon pillar with the laser irradiation time and moving speed of focus was discussed.Based on experiment data,the micro carbon pillar with an aspect ratio of over 500 was built through the method of moving the focus.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 60706009, 90401025, 60736036, 60777021 and60476009)the National Key Basic Research Program of China (Grant Nos 2006CB604901 and 2006CB604902)the National High Technology Research and Development Program of China (Grant Nos 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417)
文摘Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.
文摘A superhard α-Si_3N_4 film,deposited on metal substrate,was produced by laser chemical vapor deposition adopting a kW-level high power CO_2 laser.Most films are composed of fine Si_3N_4 partieles.They join the metal substrate in strong bond.The films have super hardness,excellent resistance to wear and corrosion,etc.Their thickness may be controlled within 5-30 μm.
