A new type strongly gain coupled (GC) DFB laser and a new type self alignment spot size converter (SA SSC) are proposed and successfully fabricated.The strongly GC DFB laser is monolithically integrated with the ...A new type strongly gain coupled (GC) DFB laser and a new type self alignment spot size converter (SA SSC) are proposed and successfully fabricated.The strongly GC DFB laser is monolithically integrated with the SA SSC with three step epitaxies.A high single mode yield and large side mode suppression ratio is obtained from the strongly GC DFB laser.A near circle far field pattern is obtained by using the SA SSC.展开更多
Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and ab...Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1 5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.展开更多
目的:研究半导体激光联合去釉突治疗在伴有釉突的Ⅱ度根分叉病变治疗中的临床效果及其影响因素。方法:纳入存在Ⅱ型釉突的Ⅱ度根分叉病变患者24例,共48颗患牙,随机分为根面平整组(SRP组)、去釉突+SRP组(D+SRP组)、去釉突+SRP+半导体激光...目的:研究半导体激光联合去釉突治疗在伴有釉突的Ⅱ度根分叉病变治疗中的临床效果及其影响因素。方法:纳入存在Ⅱ型釉突的Ⅱ度根分叉病变患者24例,共48颗患牙,随机分为根面平整组(SRP组)、去釉突+SRP组(D+SRP组)、去釉突+SRP+半导体激光组(D+SRP+L组)。SRP组不去釉突直接行SRP;D+SRP组去除釉突后行SRP;D+SRP+L组去釉突后,联合使用半导体激光辅助SRP。分别于治疗前及治疗后4周、3个月比较3组患者的探诊深度(PD)、牙龈出血指数(BI)、牙龈退缩(GR)和附着丧失(CAL)。收集36颗存在Ⅱ型釉突的离体牙,随机分为以上3组,制备根片,原子力显微镜下观察3组的表面形态,测定表面粗糙度(Ra值);免疫荧光细胞迁移实验观察牙周膜成纤维细胞(hPDLFs)迁移能力;牙龈卟啉单胞菌培养观察菌落形态。结果:治疗后4周及3个月,牙周各指标改善情况,D+SRP+L组最显著,D+SRP组次之,SRP组最差(P<0.01)。原子力显微镜下测定各组表面粗糙度:D+SRP+L组最大,D+SRP组次之,SRP组最小。荧光显微镜下观察hPDLFs迁移细胞数目,D+SRP+L组迁移能力最高,组间差异具有统计学意义(P<0.01)。原子力显微镜下VPM(peak material volume)值,D+SRP组与SRP组相比无明显差异;而D+SRP+L组最低,与SRP组相比差异有统计学意义。3组菌层厚度无明显差异(P>0.05)。结论:半导体激光联合去釉突可以提高有釉突的Ⅱ度根分叉病变患牙的基础治疗效果。展开更多
文摘A new type strongly gain coupled (GC) DFB laser and a new type self alignment spot size converter (SA SSC) are proposed and successfully fabricated.The strongly GC DFB laser is monolithically integrated with the SA SSC with three step epitaxies.A high single mode yield and large side mode suppression ratio is obtained from the strongly GC DFB laser.A near circle far field pattern is obtained by using the SA SSC.
文摘Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1 5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.
文摘目的:研究半导体激光联合去釉突治疗在伴有釉突的Ⅱ度根分叉病变治疗中的临床效果及其影响因素。方法:纳入存在Ⅱ型釉突的Ⅱ度根分叉病变患者24例,共48颗患牙,随机分为根面平整组(SRP组)、去釉突+SRP组(D+SRP组)、去釉突+SRP+半导体激光组(D+SRP+L组)。SRP组不去釉突直接行SRP;D+SRP组去除釉突后行SRP;D+SRP+L组去釉突后,联合使用半导体激光辅助SRP。分别于治疗前及治疗后4周、3个月比较3组患者的探诊深度(PD)、牙龈出血指数(BI)、牙龈退缩(GR)和附着丧失(CAL)。收集36颗存在Ⅱ型釉突的离体牙,随机分为以上3组,制备根片,原子力显微镜下观察3组的表面形态,测定表面粗糙度(Ra值);免疫荧光细胞迁移实验观察牙周膜成纤维细胞(hPDLFs)迁移能力;牙龈卟啉单胞菌培养观察菌落形态。结果:治疗后4周及3个月,牙周各指标改善情况,D+SRP+L组最显著,D+SRP组次之,SRP组最差(P<0.01)。原子力显微镜下测定各组表面粗糙度:D+SRP+L组最大,D+SRP组次之,SRP组最小。荧光显微镜下观察hPDLFs迁移细胞数目,D+SRP+L组迁移能力最高,组间差异具有统计学意义(P<0.01)。原子力显微镜下VPM(peak material volume)值,D+SRP组与SRP组相比无明显差异;而D+SRP+L组最低,与SRP组相比差异有统计学意义。3组菌层厚度无明显差异(P>0.05)。结论:半导体激光联合去釉突可以提高有釉突的Ⅱ度根分叉病变患牙的基础治疗效果。