Effects of facet reflectivity of a laser diode on the performance of fiber Bragg grating semiconductor lasers are studied experimentally. Facet reflectivity of less than 10-4 is necessary to obtain stable oscillation ...Effects of facet reflectivity of a laser diode on the performance of fiber Bragg grating semiconductor lasers are studied experimentally. Facet reflectivity of less than 10-4 is necessary to obtain stable oscillation wavelength.展开更多
A comparison between intensity noise spectra and also the line shapes of gain-guided, weakly-index-guided, and strongly-index-guided semiconductor lasers are made using numerical solution of Maxwell-Bloch equations in...A comparison between intensity noise spectra and also the line shapes of gain-guided, weakly-index-guided, and strongly-index-guided semiconductor lasers are made using numerical solution of Maxwell-Bloch equations including spontaneous emission noise.展开更多
The effects of gain compression on the modulation dynamics of an optically injected gain lever semiconductor laser are studied. Calculations reveal that the gain compression is not necessarily a drawback affecting the...The effects of gain compression on the modulation dynamics of an optically injected gain lever semiconductor laser are studied. Calculations reveal that the gain compression is not necessarily a drawback affecting the laser dynamics. With a practical injection strength, a high gain lever effect and a moderate compression value allow us to theoretically predict a modulation bandwidth four times higher than the free-running one without a gain lever,which is of paramount importance for the development of directly modulated broadband optical sources compatible with short-reach communication links.展开更多
We present a practical method to avoid the mis-locking phenomenon in the saturated-absorption-spectrum laser- frequency-locking system and set up a simple theoretical model to explain the abnormal saturated absorption...We present a practical method to avoid the mis-locking phenomenon in the saturated-absorption-spectrum laser- frequency-locking system and set up a simple theoretical model to explain the abnormal saturated absorption spectrum. The method uses the normal and abnormal saturated absorption spectra of the same transition 52S1/2, F = 2-52P3/2, F1 = 3 saturated absorption of the 87Rb D2 resonance line. After subtracting these two signals with the help of electronics, we can obtain a spectrum with a single peak to lock the laser. In our experiment, we use the normal and inverse signals of the transitions 52S1/2, F = 2-52P3/2, F1 = 3 saturated absorption of the 87Rb D2 resonance line to lock a 780-nm distributed feedback (DFB) diode laser. This method improves the long-term locking performance and is suitable for other kinds of diode lasers.展开更多
Diode-laser pumped monolithic single-frequency non-planar ring laser has the advantages of compactness, reliability and high efficiency. But when the pump power is high enough, the thermal effect will be serious and t...Diode-laser pumped monolithic single-frequency non-planar ring laser has the advantages of compactness, reliability and high efficiency. But when the pump power is high enough, the thermal effect will be serious and the high-order transverse modes will appear. Therefore the single-mode output power is limited. In this paper, the mechanism of generating the high-order transverse modes in the monolithic unidirectional non-planar ring cavity is analyzed using ray tracing method. The calculated results are in agreement with the experiments.展开更多
为验证激光模拟技术用于半导体SOI器件瞬时剂量率效应研究的可行性,对其优势和主要原理进行了分析。利用0.13μm SOI MOS器件单管测试芯片进行了激光辐射实验,获得了不同尺寸器件辐射所激发的瞬时光电流与激光入射能量的关系曲线,并计...为验证激光模拟技术用于半导体SOI器件瞬时剂量率效应研究的可行性,对其优势和主要原理进行了分析。利用0.13μm SOI MOS器件单管测试芯片进行了激光辐射实验,获得了不同尺寸器件辐射所激发的瞬时光电流与激光入射能量的关系曲线,并计算得到了线性拟合后的光电流表达式。通过激光实验数据与器件TCAD仿真结果的对比,获得了本文实验条件下的辐射剂量率-激光能量模拟等效关系。结果表明,激光模拟技术可用于半导体SOI器件瞬时剂量率效应研究。展开更多
文摘Effects of facet reflectivity of a laser diode on the performance of fiber Bragg grating semiconductor lasers are studied experimentally. Facet reflectivity of less than 10-4 is necessary to obtain stable oscillation wavelength.
文摘A comparison between intensity noise spectra and also the line shapes of gain-guided, weakly-index-guided, and strongly-index-guided semiconductor lasers are made using numerical solution of Maxwell-Bloch equations including spontaneous emission noise.
基金European Office of Aerospace Research and Development(FA9550-15-1-0104)
文摘The effects of gain compression on the modulation dynamics of an optically injected gain lever semiconductor laser are studied. Calculations reveal that the gain compression is not necessarily a drawback affecting the laser dynamics. With a practical injection strength, a high gain lever effect and a moderate compression value allow us to theoretically predict a modulation bandwidth four times higher than the free-running one without a gain lever,which is of paramount importance for the development of directly modulated broadband optical sources compatible with short-reach communication links.
基金supported by the National Natural Science Foundation of China(Grant No.11174015)
文摘We present a practical method to avoid the mis-locking phenomenon in the saturated-absorption-spectrum laser- frequency-locking system and set up a simple theoretical model to explain the abnormal saturated absorption spectrum. The method uses the normal and abnormal saturated absorption spectra of the same transition 52S1/2, F = 2-52P3/2, F1 = 3 saturated absorption of the 87Rb D2 resonance line. After subtracting these two signals with the help of electronics, we can obtain a spectrum with a single peak to lock the laser. In our experiment, we use the normal and inverse signals of the transitions 52S1/2, F = 2-52P3/2, F1 = 3 saturated absorption of the 87Rb D2 resonance line to lock a 780-nm distributed feedback (DFB) diode laser. This method improves the long-term locking performance and is suitable for other kinds of diode lasers.
文摘Diode-laser pumped monolithic single-frequency non-planar ring laser has the advantages of compactness, reliability and high efficiency. But when the pump power is high enough, the thermal effect will be serious and the high-order transverse modes will appear. Therefore the single-mode output power is limited. In this paper, the mechanism of generating the high-order transverse modes in the monolithic unidirectional non-planar ring cavity is analyzed using ray tracing method. The calculated results are in agreement with the experiments.
文摘为验证激光模拟技术用于半导体SOI器件瞬时剂量率效应研究的可行性,对其优势和主要原理进行了分析。利用0.13μm SOI MOS器件单管测试芯片进行了激光辐射实验,获得了不同尺寸器件辐射所激发的瞬时光电流与激光入射能量的关系曲线,并计算得到了线性拟合后的光电流表达式。通过激光实验数据与器件TCAD仿真结果的对比,获得了本文实验条件下的辐射剂量率-激光能量模拟等效关系。结果表明,激光模拟技术可用于半导体SOI器件瞬时剂量率效应研究。