Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip

Lateral current spreading in the 4H-SiC Schottky barrier diode(SBD)chip is investigated.The 4H-SiC SBD chips with the same vertical parameters are simulated and fabricated.The results indicate that there is a fixed spreading resistance at on-state in current spreading region for a specific chip.The linear specific spreading resistance at the on-state is calculated to be 8.6Ω/cm in the fabricated chips.The proportion of the lateral spreading current in total forward current(Psp)is related to anode voltage and the chip area.Psp is increased with the increase in the anode voltage during initial on-state and then tends to a stable value.The stable values of Psp of the two fabricated chips are 32%and 54%.Combined with theoretical analysis,the proportion of the terminal region and scribing trench in a whole chip(Ksp)is also calculated and compared with Psp.The Ksp values of the two fabricated chips are calculated to be 31.94%and 57.75%.The values of Ksp and Psp are close with each other in a specific chip.The calculated Ksp can be used to predict that when the chip area of SiC SBD becomes larger than 0.5 cm2,the value of Psp would be lower than 10%.

Does hemispheric lateralization influence therapeutic effects of transcranial direct current stimulation?

This study investigated the effect of transcranial direct current stimulation（t DCS） polarity depending on lateralized function of task property in normal individuals performing visuomotor and simple repetitive tasks. Thirty healthy participants with no neurological disorders were recruited to participate in this study. Participants were randomly allocated into active or control condition. For the active condition, t DCS intensity was 2 m A with stimulation applied for 15 minutes to the right hemisphere（t DCS condition）. For the sham control, electrodes were placed in the same position, but the stimulator was turned off after 30 seconds（sham condition）. The tapping and tracking task tests were performed before and after for both conditions. Univariate analysis revealed significant difference only in the tracking task. For direct comparison of both tasks within each group, the tracking task had significantly higher Z score than the tapping task in the t DCS group（P 〈 0.05）. Thus, our study indicates that stimulation of the right hemisphere using t DCS can effectively improve visuomotor（tracking） task over simple repetitive（tapping） task.