Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure

The radiation damage responses of ttuorinated and non-fluorinated lateral PNP transistors are studied with specially designed gated-controlled lateral PNP transistors that allow for the extraction of the oxide trapped charge （Not） and interface trap （Nit） densities. All the samples are exposed in the Co-60γ ray with the dose rate of 0.5 Gy（Si）/s. After the irradiation, the buildup of Not and Nit of the samples with total dose is investigated by the gate sweep test technique. The results show that the radiation resistance of fluorinated lateral PNP transistors is significantly enhanced compared with the non-fluorinated ones.

Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors

The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor （AI）, such as the effective inductance Ls, quality factor Q, and self-resonant frequency too is analyzed based on 0.35%tm SiGe BiCMOS process. The simulation results show that for AI operated under fixed current density Jc, the HBT lateral structure parameters have significant effect on Ls but little influence on Q and 090, and the larger Ls can be realized by the narrow, short emitter stripe and few emitter stripes of SiGe HBTs. On the other hand, for AI with fixed HBT size, smaller Jc is beneficial for AI to obtain larger Ls, but with a cost of smaller Q and 090. In addition, under the fixed collector current Ic, the larger the size of HBT is, the larger Ls becomes, but the smaller Q and ab become. The obtained results provide a reference for selecting geometry of transistors and operational condition in the design of active inductors.

Early Mesozoic Basin-Mountain Coupling Mechanism and Basin Geodynamics of East China

arly Mesozoic flexural basins developed in East China include flexural basin with foredeep, compressive flexural basin, transpressional flexural basin and so on. Late Triassic collision between Gondwana and Eurasian continents led to the formation of large flexural basins with foredeep. Jurassic Tethys geotectonic domain and western Pacific active continental margin activated, resulting in the formation of Early-Middle Jurassic large flexural basins and Late Jurassic small foreland basins. These basins and their marginal orogenic belts were arranged as weakly constrained lateral extrusion structures and constrained lateral extrusion structures, which show a genetic coupling relationship between the orogenic belts and the basins.

Producing ultra-high-speed nitrogen jets by arc heating in a low-pressure chamber

Pure nitrogen gas was heated with direct current arc, at input powers from several hundred Watt to over 5 kW, and then injected through a nozzle into a chamber at 1 or 10 Pa pressure, with the purpose of accelerating the gas to very high speed around 7 km/s. Various structures of the arc generator and gas expansion nozzle were examined. Results show that bypass exhausting of the boundary layer before it enters the nozzle divergent section can greatly increase flow speed of the jet, thus it might be possible to use nitrogen as a working gas in high speed gas dynamic test facilities.

Temperature and metal composition dependence of lateral photovoltaic effect in Al-Alq_3/SiO_2/Si structures

A series of Al=-（Alq3）l-x granular films is prepared on Si wafer with native oxide layer using co-evaporation technique. Large lateral photovoltaic effect （LPE） is observed, with an optimal LPV sensitivity of 75 mV/mm in x=0.35 sample. The dependence of LPE on temperature and A1 composition is investigated, and the possible mechanism is discussed.