A novel shorted anode lateral-insulated gate bipolar transistor(SA LIGBT)with snapback-free characteristic is proposed and investigated.The device features a controlled barrier V_(barrier)and resistance R_(SA)in anode...A novel shorted anode lateral-insulated gate bipolar transistor(SA LIGBT)with snapback-free characteristic is proposed and investigated.The device features a controlled barrier V_(barrier)and resistance R_(SA)in anode,named CBR LIGBT.The electron barrier is formed by the P-float/N-buffer junction,while the anode resistance includes the polysilicon layer and N-float.At forward conduction stage,the V_(barrier)and R_(SA)can be increased by adjusting the doping of the P-float and polysilicon layer,respectively,which can suppress the unipolar mode to eliminate the snapback.At turn-off stage,the low-resistance extraction path(N-buffer/P-float/polysilicon layer/N-float)can quickly extract the electrons in the N-drift,which can effectively accelerate the turn-off speed of the device.The simulation results show that at the same V_(on) of 1.3 V,the E_(off)of the CBR LIGBT is reduced by 85%,73%,and 59.6%compared with the SSA LIGBT,conventional LIGBT,and TSA LIGBT,respectively.Additionally,at the same Eoffof 1.5 m J/cm^(2),the CBR LIGBT achieves the lowest V_(on) of 1.1 V compared with the other LIGBTs.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61604027 and 61704016)the Fund from Chongqing Technology Innovation and Application Development(Key Industry Research and Development),China(Grant No.cstc2018jszx-cyzd0646)。
文摘A novel shorted anode lateral-insulated gate bipolar transistor(SA LIGBT)with snapback-free characteristic is proposed and investigated.The device features a controlled barrier V_(barrier)and resistance R_(SA)in anode,named CBR LIGBT.The electron barrier is formed by the P-float/N-buffer junction,while the anode resistance includes the polysilicon layer and N-float.At forward conduction stage,the V_(barrier)and R_(SA)can be increased by adjusting the doping of the P-float and polysilicon layer,respectively,which can suppress the unipolar mode to eliminate the snapback.At turn-off stage,the low-resistance extraction path(N-buffer/P-float/polysilicon layer/N-float)can quickly extract the electrons in the N-drift,which can effectively accelerate the turn-off speed of the device.The simulation results show that at the same V_(on) of 1.3 V,the E_(off)of the CBR LIGBT is reduced by 85%,73%,and 59.6%compared with the SSA LIGBT,conventional LIGBT,and TSA LIGBT,respectively.Additionally,at the same Eoffof 1.5 m J/cm^(2),the CBR LIGBT achieves the lowest V_(on) of 1.1 V compared with the other LIGBTs.
