The effects of the modification of electrode/ceramic interfaces through a chemical solution deposition-derived PbO buffer layer on the fatigue endurance of lead zirconate titanate（PZT） thin films were investigated.T...The effects of the modification of electrode/ceramic interfaces through a chemical solution deposition-derived PbO buffer layer on the fatigue endurance of lead zirconate titanate（PZT） thin films were investigated.The grain size and the surface roughness of the PZT films increased through PbO interfacial modification.Moreover,the PZT films with PbO interfacial modification had a better crystallographic structure and no evident secondary phases were observed.While the remanent polarization and dielectric constant were reduced,the fatigue endurance was improved.Based on the results,the mechanism for the fatigue endurance improvement was discussed.展开更多
The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 3...The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor （LDMOS）. The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.展开更多
In order to describe the characteristics of piezoelectric bimorph, properties of lead zirconate titanate （LZT） film are studied by X-ray diffraction （XRD） and scanning eletron microscope （SEM）. The ratio of PbTi...In order to describe the characteristics of piezoelectric bimorph, properties of lead zirconate titanate （LZT） film are studied by X-ray diffraction （XRD） and scanning eletron microscope （SEM）. The ratio of PbTiOJPbZrO3 in LZT is 53/47, which is around morphotropic phase boundary （MPB）. LZT film is composed of cubic particles with the average size of 5 ~ma. Density of thin film is figured out through the datum measured in experiments. The displacement model used to analyze the driving ability of bimorph is set up, and the effect of elastic intermediate layer is taken into account. Piezoelectric coefficient of LZT film is worked out by using the displacement model. Experiments of driving ability show that deformation of bimorph free end does not increase with times of crystal growth processes and the maximum deformation is obtained after two times crystal growth processes. Finally, the ferroelectric property of the bimorph is investigated and coercive voltage of the bimorph is obtained.展开更多
基金support of Beijing Nova Program of China (2007B025)the National Natural Science Foundation of China (10979013)+1 种基金the Innovative Research Team in Universities (IRT 0509)the Major State Basic Research Development Program of China (No.2009CB623306)
文摘The effects of the modification of electrode/ceramic interfaces through a chemical solution deposition-derived PbO buffer layer on the fatigue endurance of lead zirconate titanate（PZT） thin films were investigated.The grain size and the surface roughness of the PZT films increased through PbO interfacial modification.Moreover,the PZT films with PbO interfacial modification had a better crystallographic structure and no evident secondary phases were observed.While the remanent polarization and dielectric constant were reduced,the fatigue endurance was improved.Based on the results,the mechanism for the fatigue endurance improvement was discussed.
基金the National Basic Research Program of China(Grant No.50772019)the National Natural Science Foundation of China(Grant No.61204084)
文摘The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor （LDMOS）. The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.
基金This project is supported by National Natural Science Foundation of China (No.50675025)Scientific Research Foundation of Ministry of Education,Dalian City for the Returned Overseas Chinese ScholarsDoctoral Startup Fund of Liaoning Province of China (No.20051080).
文摘In order to describe the characteristics of piezoelectric bimorph, properties of lead zirconate titanate （LZT） film are studied by X-ray diffraction （XRD） and scanning eletron microscope （SEM）. The ratio of PbTiOJPbZrO3 in LZT is 53/47, which is around morphotropic phase boundary （MPB）. LZT film is composed of cubic particles with the average size of 5 ~ma. Density of thin film is figured out through the datum measured in experiments. The displacement model used to analyze the driving ability of bimorph is set up, and the effect of elastic intermediate layer is taken into account. Piezoelectric coefficient of LZT film is worked out by using the displacement model. Experiments of driving ability show that deformation of bimorph free end does not increase with times of crystal growth processes and the maximum deformation is obtained after two times crystal growth processes. Finally, the ferroelectric property of the bimorph is investigated and coercive voltage of the bimorph is obtained.
