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Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode
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作者 廖英杰 娄艳辉 +1 位作者 王照奎 廖良生 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第11期634-638,共5页
A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electr... A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia. 展开更多
关键词 indium zinc oxide (IZO) organic light emitting device (OLED) leak current LIFETIME
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