This study proposes a practical method to estimate the junction temperature of AlGaInP LEDs using the luminescence spectra method.The peak wavelength shift of LEDs is due to the energy band gap shrinking.The temperatu...This study proposes a practical method to estimate the junction temperature of AlGaInP LEDs using the luminescence spectra method.The peak wavelength shift of LEDs is due to the energy band gap shrinking.The temperature dependence of the bandgap of AlGalnP LEDs is derived from those of the underlying binary compounds A1 P,GaP,and InP.Based on this,a theoretical model for the dependence of the peak wavelength on junction temperature is developed.Experimental results on the junction temperature of AlGalnP red light-emitting diodes are presented.Excellent agreement between the theoretical and experimental temperature dependence of the peak wavelength is found.展开更多
Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipatio...Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipation performance. This paper presents a flat surface high power GaN-based flip-chip light emitting diode （SFC-LED）, which can greatly improve the heat dissipation performance of the device. In order to understand the thermal performance of the SFC-LED thoroughly, a 3-D finite element model （FEM） is developed, and ANSYS is used to simulate the thermal performance. The temperature distributions of the SFC-LED and the CFC-LED are shown in this article, and the junction temperature simulation values of the SFC-LED and the CFC-LED are 112.80 ℃ and 122.97℃C, respectively. Simulation results prove that the junction temperature of the new structure is 10.17 ℃ lower than that of the conventional structure. Even if the CFC-LED has 24 Au bumps, the thermal resistance of the new structure is still far less than that of the conventional structure. The SFC-LED has a better thermal property.展开更多
The factors influencing the current-voltage（I-V） characteristics of light-emitting diodes（LEDs） are investigated to reveal the connection of I-V characteristics under optical excitation and those under electrical ...The factors influencing the current-voltage（I-V） characteristics of light-emitting diodes（LEDs） are investigated to reveal the connection of I-V characteristics under optical excitation and those under electrical excitation.By inspecting the I-V curves under optical and electrical excitation at identical injection current,it has been found that the I-V curves exhibit apparent differences in voltage values.Furthermore,the differences are found to originate from the junction temperatures in diverse excitation ways.Experimental results indicate that if the thermal effect of illuminating spot is depressed to an ignorable extent by using pulsed light,the junction temperature will hardly deflect from that under optical excitation,and then the I-V characteristics under two diverse excitation ways will be the same.展开更多
基金supported by the National Natural Science Foundation of China(No.61006053)
文摘This study proposes a practical method to estimate the junction temperature of AlGaInP LEDs using the luminescence spectra method.The peak wavelength shift of LEDs is due to the energy band gap shrinking.The temperature dependence of the bandgap of AlGalnP LEDs is derived from those of the underlying binary compounds A1 P,GaP,and InP.Based on this,a theoretical model for the dependence of the peak wavelength on junction temperature is developed.Experimental results on the junction temperature of AlGalnP red light-emitting diodes are presented.Excellent agreement between the theoretical and experimental temperature dependence of the peak wavelength is found.
文摘Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipation performance. This paper presents a flat surface high power GaN-based flip-chip light emitting diode （SFC-LED）, which can greatly improve the heat dissipation performance of the device. In order to understand the thermal performance of the SFC-LED thoroughly, a 3-D finite element model （FEM） is developed, and ANSYS is used to simulate the thermal performance. The temperature distributions of the SFC-LED and the CFC-LED are shown in this article, and the junction temperature simulation values of the SFC-LED and the CFC-LED are 112.80 ℃ and 122.97℃C, respectively. Simulation results prove that the junction temperature of the new structure is 10.17 ℃ lower than that of the conventional structure. Even if the CFC-LED has 24 Au bumps, the thermal resistance of the new structure is still far less than that of the conventional structure. The SFC-LED has a better thermal property.
基金Project supported by the National Natural Science Foundation of China(No.61006053)the National Science Foundation ofCQ CSTC (No.CSTC 2008BB3156)
文摘The factors influencing the current-voltage（I-V） characteristics of light-emitting diodes（LEDs） are investigated to reveal the connection of I-V characteristics under optical excitation and those under electrical excitation.By inspecting the I-V curves under optical and electrical excitation at identical injection current,it has been found that the I-V curves exhibit apparent differences in voltage values.Furthermore,the differences are found to originate from the junction temperatures in diverse excitation ways.Experimental results indicate that if the thermal effect of illuminating spot is depressed to an ignorable extent by using pulsed light,the junction temperature will hardly deflect from that under optical excitation,and then the I-V characteristics under two diverse excitation ways will be the same.
