Organic semiconductor is one of the most promising luminescent and lasing materials that can be chemically synthesized with a controllable performance and possess high cross-section of stimulated emission . Organic se...Organic semiconductor is one of the most promising luminescent and lasing materials that can be chemically synthesized with a controllable performance and possess high cross-section of stimulated emission . Organic semiconductor laser diodes （OSLDs） can be prepared by simple processing technologies and integrated easily with other optoelectronic devices. As a result, OSLDs would have appealing applications in low cost, compact, flexible and tunable lasers with spectral region from ultraviolet to near infrared . Although lasing has been widely demonstrated under optical pumping, electrically pumped OSLDs are rather difficult to realize because the expected high threshold current is hard to reach in low electrical conductivity organic semiconductors and electroluminescence （EL） efficiency is much decreased under high current.展开更多
Band structure, electron distribution, direct-bandgap light emission, and optical gain of tensile strained, n-doped Ge at different temperatures were calculated. We found that the heating effects not only increase the...Band structure, electron distribution, direct-bandgap light emission, and optical gain of tensile strained, n-doped Ge at different temperatures were calculated. We found that the heating effects not only increase the electron occupancy rate in the Γ valley of Ge by thermal excitation, but also reduce the energy difference between its Γ valley and L valley. However,the light emission enhancement of Ge induced by the heating effects is weakened with increasing tensile strain and n-doping concentration. This phenomenon could be explained by that Ge is more similar to a direct bandgap material under tensile strain and n-doping. The heating effects also increase the optical gain of tensile strained, n-doped Ge at low temperature, but decrease it at high temperature. At high temperature, the hole and electron distributions become more flat, which prevent obtaining higher optical gain. Meanwhile, the heating effects also increase the free-carrier absorption. Therefore, to obtain a higher net maximum gain, the tensile strained, n-doped Ge films on Si should balance the gain increased by the heating effects and the optical loss induced by the free-carrier absorption.展开更多
A new approach for studying the time-evolution law of a chaotic light field in a damping-gaining coexisting process is presented. The new differential equation for determining the parameter of the density operator p（...A new approach for studying the time-evolution law of a chaotic light field in a damping-gaining coexisting process is presented. The new differential equation for determining the parameter of the density operator p（t） is derived and the solution of f for the damping and gaining processes are studied separately. Our approach is direct and the result is concise since it is not necessary for us to know the Kraus operators in advance.展开更多
A 2＂×2＂BC501A liquid scintillation detector with a gain stabilization system is developed and applied to neutron andγ-ray measurement on the EAST tokamak.Energy calibration of a liquid scintillator using a fas...A 2＂×2＂BC501A liquid scintillation detector with a gain stabilization system is developed and applied to neutron andγ-ray measurement on the EAST tokamak.Energy calibration of a liquid scintillator using a fast coincidence method is presented and compared with the Monte Carlo simulation.Determination of the proton light output function of the BC501A is presented.Results from dedicated experiments with an Am-Be neutron source,γsource and quasi-monoenergetic neutron beams,and from measurements on EAST tokamak are presented and discussed.展开更多
Fluoride-based thulium-doped visible light fiber amplifier(TmVLFA), which can be used to amplify the blue light signal for a visible light communication(VLC) system,is theoretically demonstrated for the first time acc...Fluoride-based thulium-doped visible light fiber amplifier(TmVLFA), which can be used to amplify the blue light signal for a visible light communication(VLC) system,is theoretically demonstrated for the first time according to the best of our knowledge. The transition rate equations and power propagation equations are solved to predict the dependence of the gain and noise figure on fiber parameters. The numerical results show that with the pump wavelength 1150 nm and pump power 800 mW, 2.75 m long thulium-doped fiber can amplify blue light(480 nm) signal up to 33.3 dB, and the noise figure is in the range from 3.0 to 3.5 dB. The model and numerical results encourage the use of fiber amplifier in VLC system for blue light amplification to extend the range of VLC.展开更多
基金supported by the CAS Innovation Program, the National Natural Science Foundation of China (51503196, 61775211, 61704170, 61405195 and 61774154)the financial support from the State Key Laboratory of Luminescence and Applications
文摘Organic semiconductor is one of the most promising luminescent and lasing materials that can be chemically synthesized with a controllable performance and possess high cross-section of stimulated emission . Organic semiconductor laser diodes （OSLDs） can be prepared by simple processing technologies and integrated easily with other optoelectronic devices. As a result, OSLDs would have appealing applications in low cost, compact, flexible and tunable lasers with spectral region from ultraviolet to near infrared . Although lasing has been widely demonstrated under optical pumping, electrically pumped OSLDs are rather difficult to realize because the expected high threshold current is hard to reach in low electrical conductivity organic semiconductors and electroluminescence （EL） efficiency is much decreased under high current.
基金Project supported by the National Basic Research Development Program of China(Grant No.2013CB632103)the National Natural Science Foundation of China(Grant Nos.61377045,61435013,and 61176013)
文摘Band structure, electron distribution, direct-bandgap light emission, and optical gain of tensile strained, n-doped Ge at different temperatures were calculated. We found that the heating effects not only increase the electron occupancy rate in the Γ valley of Ge by thermal excitation, but also reduce the energy difference between its Γ valley and L valley. However,the light emission enhancement of Ge induced by the heating effects is weakened with increasing tensile strain and n-doping concentration. This phenomenon could be explained by that Ge is more similar to a direct bandgap material under tensile strain and n-doping. The heating effects also increase the optical gain of tensile strained, n-doped Ge at low temperature, but decrease it at high temperature. At high temperature, the hole and electron distributions become more flat, which prevent obtaining higher optical gain. Meanwhile, the heating effects also increase the free-carrier absorption. Therefore, to obtain a higher net maximum gain, the tensile strained, n-doped Ge films on Si should balance the gain increased by the heating effects and the optical loss induced by the free-carrier absorption.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61141007,11047133,and 11175113)the Natural Science Foundation of Jiangxi Province of China (Grant Nos. 2010GQS0080 and 2010GQW0027)+1 种基金the Research Foundation of the Education Department of Jiangxi Province of China (Grant No. GJJ11339)the Sponsored Program for Cultivating Youths of Outstanding Ability in Jiangxi Normal University
文摘A new approach for studying the time-evolution law of a chaotic light field in a damping-gaining coexisting process is presented. The new differential equation for determining the parameter of the density operator p（t） is derived and the solution of f for the damping and gaining processes are studied separately. Our approach is direct and the result is concise since it is not necessary for us to know the Kraus operators in advance.
基金supported by the National Magnetic Confinement Fusion Science Program of China(Nos.2013GB106004 and 2012GB101003)National Natural Science Foundation of China(No.91226102)
文摘A 2＂×2＂BC501A liquid scintillation detector with a gain stabilization system is developed and applied to neutron andγ-ray measurement on the EAST tokamak.Energy calibration of a liquid scintillator using a fast coincidence method is presented and compared with the Monte Carlo simulation.Determination of the proton light output function of the BC501A is presented.Results from dedicated experiments with an Am-Be neutron source,γsource and quasi-monoenergetic neutron beams,and from measurements on EAST tokamak are presented and discussed.
文摘Fluoride-based thulium-doped visible light fiber amplifier(TmVLFA), which can be used to amplify the blue light signal for a visible light communication(VLC) system,is theoretically demonstrated for the first time according to the best of our knowledge. The transition rate equations and power propagation equations are solved to predict the dependence of the gain and noise figure on fiber parameters. The numerical results show that with the pump wavelength 1150 nm and pump power 800 mW, 2.75 m long thulium-doped fiber can amplify blue light(480 nm) signal up to 33.3 dB, and the noise figure is in the range from 3.0 to 3.5 dB. The model and numerical results encourage the use of fiber amplifier in VLC system for blue light amplification to extend the range of VLC.
基金National Natural Science Foundation of China(No.62204127)the Natural Science Foundation of Jiangsu Province(No.BK20215093)State Key Laboratory of Luminescence and Applications(No.SKLA‒2021‒04)。
